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  • 1
    Electronic Resource
    Electronic Resource
    Evaluating the effects of optical and carrier losses in etched-post vertical cavity lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5871-5875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the combined effects of optical scattering loss and surface recombination (or carrier diffusion) on the performance and scalability of etched-post vertical cavity lasers (VCLs). The size dependence of optical losses and threshold gain are determined from pulsed measurements of external quantum efficiency. Deeper etch depths result in a stronger radial dependence of the threshold gain, which quickly increases the threshold current density. With optical loss accounted for, pulsed threshold current density measurements give the extra information needed for evaluating carrier loss. Surface recombination or carrier diffusion also results in threshold current density increases, but scalability is ultimately limited by the ability of the active region to provide enough gain for smaller size, higher optical loss devices. Even with these losses, three-quantum-well VCLs with shallow etches have threshold currents as low as 420 μA. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360588
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  • 2
    Electronic Resource
    Electronic Resource
    Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum-well ridge-waveguide lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4479-4487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the increase in threshold currents due to lateral carrier diffusion in InGaAs/AlGaAs quantum-well ridge-waveguide laser diodes. The ridge stripes were fabricated by using both in situ monitored pure Cl2 reactive ion etching and selective wet etching to completely eliminate the spreading current in the conductive upper cladding layer while keeping the ridge sidewalls straight. After comparing the threshold data with a theoretical model, the ambipolar diffusion coefficient is found to be 22 cm2/s in the population-inverted InGaAs layer. This model is based on the calculated optical gain curve and the ambipolar carrier transport in the quantum-well and waveguiding layers. The dependence of carrier lifetime on the local carrier concentration is included in the calculation. Moreover, from another set of devices with the portions of the active layer outside the ridge stripes etched away, the surface recombination velocity is found to be around 1–2×105 cm/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357279
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  • 3
    Electronic Resource
    Electronic Resource
    High-efficiency and low-threshold InGaAs/AlGaAs quantum-well lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3932-3934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-efficiency and low-threshold InGaAs/AlGaAs quantum-well laser structures have been grown by molecular beam epitaxy. Material characterization was performed on polyimide-planarized ridge-waveguide lasers. The measured material gain data are compared to theoretical calculations that include the valence-band mixing effects. Total injection current densities of 84 and 60 A/cm2 have been measured from 50-μm-wide laser diodes with cavity lengths of 2850 μm (from a double-quantum-well sample) and 1770 μm (from a single-well sample), respectively. Moreover, we have also obtained a cw threshold current as low as 2.1 mA from a 1.7-μm-wide and 140-μm-long as-cleaved ridge-waveguide device. In addition, the lateral current leakage for the double-quantum-well sample is found to be twice that of the single-well one.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357408
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  • 4
    Electronic Resource
    Electronic Resource
    Elastomer-Resin Blends: Acrylonitrile Type Synthetic Rubber and Polyvinyl Chloride Resins (1949)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 41 (1949), S. 401-408 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50470a034
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  • 5
    Electronic Resource
    Electronic Resource
    Plasticizers from Oxo Alcohols. (1949)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 41 (1949), S. 665-670 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50472a004
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of hypophosphite contents and surface treatment on electroplated Co-Ni-P thin films : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5575-5577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article describes the effects of sodium hypophosphite (hypo) content in cobalt nickel sulfate bath, and the duration of surface treatment prior to electroplating, on the magnetic, structural, and electrical properties of Co-Ni-P thin films. The coercivity of the Co-Ni-P layer can be controlled independently either by hypo content or by surface treatment. Transmission electron microscopy microstructure indicates that the width of grain boundaries of Co-Ni-P films is influenced by hypo in the magnetic bath. The mechanism of the coercivity increase by hypo in the bath is thought to result from magnetostatic or exchange decoupling at phosphorus-rich grain boundaries. Effects of these factors on media noise can be well-explained by the microstructural change of Co-Ni-P layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353655
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  • 7
    Electronic Resource
    Electronic Resource
    The melting curve of neon at high pressure (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 3835-3838 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have measured the melting curve of neon to 54.5 kbar and 328 K using a diamond-anvil cell. The measured points together with earlier low-pressure data are fitted accurately with a Simon-Glatzel function. Theoretical calculations of the melting curve using lattice dynamics and variational fluid theory with exponential-six potentials fitted to solid isotherm data are in good agreement with the experimental data. The law of corresponding states is tested for the melting curves of He, Ne, and Ar, and is found to be obeyed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460683
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  • 8
    Electronic Resource
    Electronic Resource
    Erratum: Gabor lens focusing of a proton beam [Rev. Sci. Instrum. 61, 550 (1990)] (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2707-2707 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141976
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  • 9
    Electronic Resource
    Electronic Resource
    Gabor lens focusing of a proton beam : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 550-552 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Gabor or plasma lenses have previously been used to focus intense beams of positive ions at energies from 10 keV to 5 MeV. Such lenses are a possible candidate for matching an intense low-energy proton beam into a radio frequency quadrupole accelerator (RFQ). The conventional solution has been to match an intense beam with two solenoid lenses. This leads to a time-dependent emittance at the RFQ entrance due to neutralization effects. The neutralization time of a space-charge dominated 30–50 mA proton beam in the Gabor lens is 〈1 μs. A non-neutral electron plasma is contained in the Gabor lens by a 200 G solenoid magnet. The equivalent thin lens focal length of a Gabor lens operated at Fermilab has been determined to be 10 cm. This focusing strength is adequate for matching a proton beam into an RFQ.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141248
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  • 10
    Electronic Resource
    Electronic Resource
    Ln3Au3Sb4: Thermoelectrics with low thermal conductivity (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3999-4001 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermoelectric properties of intermetallic compounds with the Y3Au3Sb4 structure type, of formula Ln3Au3Sb4 for Ln=Gd, Nd, Ho, and Sm, are reported. The highest Seebeck coefficients are on the order of 100–200 μV/K, indicating that the dominant carriers are holes, and increase with increasing temperature. Variation of the Au:Sb ratio significantly affects the resistivities and Seebeck coefficients. Materials with mixtures of lanthanides on the large atom site show improved Seebeck coefficients without degradation of the electrical resistivity. The thermal conductivities are very low, even for the stoichiometric materials, and decrease in materials with mixed lanthanides. Band-structure calculations show a complex multivalley character for both valence and conduction bands. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123240
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