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  • 1995-1999  (2)
  • 1990-1994  (1)
  • Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds)  (2)
  • Excitons and related phenomena  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1371-1375 
    ISSN: 0392-6737
    Keywords: III–V semiconductors ; III–V compounds and systems ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A photoluminescence study of self-ordered InAs quantum dots grown by molecular beam epitaxy on a GaAs substrate is reported. Short pulses and high excitations have been used in order to observe emission from higher states of the quantum dots. The energy spacing between adjacent transitions seems to be of the order of 40–50 meV for dot diameters around 20 nm. The photoluminescence decay time from the ground state is of the order of 650–700 ps and decreases down to roughly 100 ps for the highest confined states. A cascade-like mechanism for the carrier relaxation in these structures is strongly suggested by the time-resolved data.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1383-1387 
    ISSN: 0392-6737
    Keywords: III–V semiconductors ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Excitons and related phenomena (including electron-hole drops) ; III–V compounds and systems ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of continuous-wave photoluminescence and photoluminescence excitation. The luminescence spectrum at low temperature systematically exhibits a doublet structure whose lineshape is very sensitive to the excitation energy. Accordingly, the excitation spectra detected by monitoring the emission at the two different luminescence peaks have very different profiles, with peaks and/or dips which are not directly related to absorption resonances. As a matter of fact, the anomalies disappear when increasing the temperature or when using an optical bias with energy above the GaAs energy gap. In these cases, the excitation profiles recover the behaviour typical of 2D systems.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 0392-6737
    Keywords: Photoluminescence ; Excitons and related phenomena ; Charge carriers: generation, recombination, lifetime and trapping
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si presenta, in questo lavoro, uno studio sperimentale degli effetti delle disomogeneità spaziali e temporali nei plasmi di elettroni e lacune generati da impulsi laser potenti in strutture a buche quantiche di GaAs/AlGaAs. Si trova che tali disomogeneità modificano fortemente gli spettri di fotoluminescenza e devono quindi essere considerate per una corretta interpretazione dei dati sperimentali. La forma di riga degli spettri di luminescenza viene analizzata mediante un modello statistico che include, in modo semplice, le disomogeneità spaziali e temporali degli impulsi laser usati per l’eccitazione. Si ottiene un accordo soddisfacente con i dati sperimentali e si trova che i valori dei parametri ottenuti dal fit dipendono in modo sensibile dal modello assunto per la descrizione delle disomogeneità. Grande cautela deve essere quindi usata nel dedurre le proprietà del plasma fotogenerato a partire da una analisi delle forme di riga.
    Notes: Summary The effects on the luminescence lineshape of the spatial and temporal inhomogeneities of the electron-hole plasma generated by strong laser pulses in GaAs/AlGaAs multiple quantum well structures are experimentally investigated. It is found that inhomogeneities strongly affect the luminescence spectra and must be taken into account for a correct interpretation of the experimental data. The lineshape of the luminescence spectra is analysed using a statistical model that includes, in a simple way, the spatial and temporal inhomogeneities of the laser pulses used for excitation. A fair agreement is obtained with the experimental data; at the same time the values of the fit parameters turn out to be rather sensitive to the model assumed for describing the inhomogeneities. Therefore, caution has to be used when inferring plasma properties, such as the carrier density and temperature, from a lineshape analysis.
    Type of Medium: Electronic Resource
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