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  • 1
    Electronic Resource
    Electronic Resource
    Molecular-level description of temperature and pressure effects on the viscosity of water (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 10171-10176 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The steep non-Arrhenius temperature dependence at low temperatures of the shear viscosity of water and its backwards-sounding increased fluidity under pressure for temperatures below 33 °C are two of the anomalies of this liquid that have been known for a very long time. The purpose of the present paper is to show how these two important characteristics of water emerge quantitatively from an explicit two-state outer-neighbor mixture model that we have used to explain many other properties of this substance. It will be shown here that both of these viscosity anomalies are directly related to the steep variations with temperature and pressure of the fractional compositions of ice-Ih-type bonding and ice-II-type bonding in the two-state mixture. This compositional dependence has already been obtained in earlier work from the variations of the density and the isothermal compressibility of water with temperature. The viscosity analysis presented here thus helps to unify further all the properties of this liquid under a single, very simple structural characteristic. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480367
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  • 2
    Electronic Resource
    Electronic Resource
    A novel integrated electric motor/pump for underwater applications : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5548-5550 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents a novel electric motor/pump system that combines an axial field, permanent magnet motor with a centrifugal pump. This system, unique because the motor permanent magnet rotor and pump impeller vanes are a single unit, provides a compact, reliable, low-noise, and high-power density electrically driven centrifugal pump suitable for underwater applications in which minimizing noise, vibration, and volume are major design objectives. Performance tradeoffs for the electromagnetic analysis were made by three-dimensional finite element analysis models in conjunction with a lumped parameter magnetic circuit model. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362304
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  • 3
    Electronic Resource
    Electronic Resource
    Synthesis and characterization of branched liquid-crystalline polyethers containing cyclotetraveratrylene-based disk-like mesogens (1992)
    s.l. : American Chemical Society
    Macromolecules 25 (1992), S. 1164-1176 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00029a025
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  • 4
    Electronic Resource
    Electronic Resource
    Photochemistry of adsorbed molecules. IX. Ultraviolet photodissociation and photoreaction of HBr on LiF(001) (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 1361-1377 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The dynamics of the UV photochemistry of HBr on LiF(001) has been studied by angle-resolved time-of-flight mass spectrometry in ultra-high vacuum. Single-photon photodissociation of adsorbed HBr at 193 nm resulted in photofragment translational energy distributions that differed from those produced in the gas-phase photolysis. Angular distributions of the fast H-atom photofragments peaked at 55±5° to the surface normal, consistent with a preferentially oriented adsorbate geometry. The angular distribution of atomic H obtained from photodissociation of HBr(ad) using polarized light indicated that a substantial fraction of the H atoms collided with the surface before leaving it. Two types of photoreactions in the adsorbed state were observed. Molecular hydrogen was formed in the photoinitiated abstraction reaction, H+HBr(ad)→H2(g)+Br, and its markedly non-Boltzmann translational energy distribution was found to have less energy than would be consistent with gas-phase experiments (performed elsewhere). Photoproducts from the bimolecular reaction 2HX(ad)→H2+X2, X=Cl, Br were also observed in the present study. This photoreaction, which did not depend on prior photodissociation of HX(ad), is thought to proceed through electronic excitation of an HX dimer in the adsorbed state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461118
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  • 5
    Electronic Resource
    Electronic Resource
    ac bridge for high-temperature magnetic thermometry (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2232-2235 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A modified Hartshorn inductance bridge is used to follow changes in the magnetization of superparamagnetic samples in order to determine their average temperature. The thermometry is performed in the temperature range of 475–525 K. During routine experiments, the rms noise voltage in the bridge is approximately 300 nV when the primary coil is excited by a 200 mA rms current at a frequency of 47 Hz. This corresponds to a signal-to-noise ratio of 3000 and a temperature sensitivity of 0.015 K for typical samples studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141394
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  • 6
    Electronic Resource
    Electronic Resource
    Evolution of deep-level centers in p-type silicon following ion implantation at 85 K (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1263-1265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ deep-level transient spectroscopy measurements have been carried out on p-type silicon following MeV He, Si, and Ge ion implantation at 85 K. Deep levels corresponding to intrinsic and impurity-related point defects are only detected after annealing at temperatures above 200 K. In addition to divacancies, interstitial carbon, and a carbon–oxygen complex, the formation of another defect, denoted as K2, has been observed during annealing at 200–230 K in epitaxial wafers, and at 200–300 K in Czochralski grown material. The energy level of the K2 defect is located 0.36 eV above the valence band, which is very close to a previously observed level of the carbon–oxygen pair. The relative concentration of this defect is ∼10 times higher in samples implanted with Ge than in those implanted with He. Due to its formation temperature, equal concentration in epitaxial and Czochralski grown wafers, and absence in n-type samples, the K2 trap has been tentatively identified as a vacancy-related complex which probably contains boron. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123519
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of a predeposited boron layer during the epitaxial growth of Ge on CaF2 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3291-3293 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a thin predeposited B layer prior to the epitaxial growth of Ge on CaF2, we have obtained significantly improved Ge crystalline quality and surface morphology for Ge/CaF2/Si(111) and Ge/CaF2/Si(100) structures. Although B acts as a surfactant in suppressing island formation, it does not migrate to the growth front during Ge growth, which was widely observed in the surfactant-assisted epitaxial growth of Ge on Si. The B predeposit also prevents Ca from migrating to the Ge surface, and promotes A-type epitaxy of Ge(111) when Si(111) substrates are used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110178
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical properties of low-temperature-grown CaF2 on Si(111) (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 338-340 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: While epitaxial CaF2 films grown on Si(111) at temperatures above 550 °C exhibited flat capacitance-voltage (C-V) curves, suggesting a pinned CaF2/Si(111) interface, we have observed unpinned C-V curves from as-deposited epitaxial CaF2 grown at 300 °C. Our results demonstrate that C-V characteristics of CaF2/Si(111) are determined by the thermal history, rather than the crystalline quality, of the CaF2 film. Correlations among CaF2/Si interface state density, thermal stress, and atomic bonding at the interface are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106650
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial growth of an Al/CaF2/Al/Si(111) structure (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 270-272 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Despite their large lattice mismatch (∼25%), epitaxial CaF2 films have been grown on single crystal Al(111) on Si(111) by low temperature molecular beam epitaxy. X-ray diffraction shows that the orientations of the CaF2 are the same as those of the Al films, whether the orientations of the Al are the same rotated 180° or with respect to the underlying Si substrate. Furthermore, our successful fabrication of an epitaxial Al/CaF2/Al/Si(111) structure suggests that Al can be a useful conductor material in three-dimensional device integration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107966
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  • 10
    Electronic Resource
    Electronic Resource
    Visible photoluminescence from porous Si formed by annealing and chemically etching amorphous Si (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2467-2469 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the visible photoluminescence (PL) and microstructure of amorphous Si (a-Si) after annealing and etching. The a-Si layers were grown on (100)Si substrates and partially crystallized by annealing between 550–1150 °C. Porous Si layers (PSLs) were then produced by etching in HF-HNO3. While no visible PL was observed from unannealed and etched a-Si, visible PL was detected after annealing and etching. The observation of visible PL after etching coincided with the observation of Si microcrystallites in the annealed layer. The results suggest that an initial crystalline structure is important for fabricating luminescent PSLs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108154
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