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  • 1995-1999  (6)
  • 1990-1994  (9)
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Year
  • 11
    Electronic Resource
    Electronic Resource
    Study of neutrino-recoil produced point defects in InSb by119Sn Mössbauer spectroscopy (1996)
    Springer
    Hyperfine interactions 97-98 (1996), S. 221-228 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have utilized the electron-capture decay of119 Te to119Sb to produce isolated single Frenkel pairs in InSb. This effect is caused by the neutrino emission in the decay process which imparts a monoenergetic recoil of 12 eV to the119Sb atoms, thereby displacing about 20% of them to interstitial sites. Two distinct interstitial components can be observed. The process is traced by Mössbauer emission spectroscopy following the decay of119Sb to119Sn. The displacement thresholdE d is confined to 6 eV〈E d 〈12 eV from auxiliary experiments employing119mTe isotopes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02150178
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    Paper (German National Licenses)
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  • 12
    Electronic Resource
    Electronic Resource
    A novel type of depth-selective Auger electron Mössbauer spectroscopy (1990)
    Springer
    Hyperfine interactions 58 (1990), S. 2561-2566 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The utility of parallel-plate avalanche detectors for depth-selective Auger electron Mössbauer spectroscopy is demonstrated for the 24 keV transition of119Sn. Possible developments and applications of this technique to other Mössbauer isotopes are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02398377
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    Paper (German National Licenses)
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  • 13
    Electronic Resource
    Electronic Resource
    Evidence for vacancy percolation in highly-doped silicon (1994)
    Springer
    Hyperfine interactions 93 (1994), S. 1395-1400 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The extreme dopant diffusivities observed in silicon for donor concentrations in excess of 2×1020cm−3 have recently been explained by a vacancy percolation model proposing that a network of fast diffusion paths is formed when the average distance of the donors becomes equal to or less than the fifth nearest-neighbour distance. Here, we report on evidence by means of119Sn Mössbauer spectroscopy for the postulated high vacancy concentration in the percolation cluster.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02072883
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    Paper (German National Licenses)
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  • 14
    Electronic Resource
    Electronic Resource
    Mössbauer study of defects created by low-fluence In+ implantations in InP (1993)
    Springer
    Hyperfine interactions 79 (1993), S. 639-644 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The temperature and fluence dependence of defect interactions in damage cascades in n-type InP has been investigated with ion-implanted radioactive119In (T 1.2=2.1 min) probe atoms. The hyperfine interactions for the119Sn Mössbauer daughter atoms in the resulting defect structures have been determined. An annealing model based on the temperature dependent mobility of lattice defects and their interactions in three observed annealing stages is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00567588
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    Paper (German National Licenses)
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  • 15
    Electronic Resource
    Electronic Resource
    Te-defect interaction in GaSb: donor–vacancy pair or DX-center? (1999)
    Springer
    Hyperfine interactions 120-121 (1999), S. 365-369 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have studied 119Te donor atoms in GaSb incorporated by a recoil implantation technique by applying emission Mössbauer spectroscopy on 119Sn. Since 119Te decays via the intermediate 119Sb the thermal stability of the microscopic environment of the implanted Te atoms can be probed either in the Te state or, after transmutation, in the Sb state. It is found that part of the probes is situated in a strongly distorted configuration which cannot be annealed as long as the probes are Te. After transmutation to Sb the distorted state anneals at 405 K. From these results we conclude that the distorted configuration is implantation induced (very likely a probe-vacancy association) stabilized by the Te chemistry and not a DX center which should anneal with a much lower barrier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1017020717006
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    Paper (German National Licenses)
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