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  • 1995-1999  (34)
  • 1985-1989  (45)
  • 1975-1979  (40)
  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3369-3371 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A locally orthogonal property between the side of a Delaunay triangle and the edge of a Voronoi polygon is applied to the post-processing scheme. Our post-processing scheme explicitly satisfies a governing equation in the electromagnetic fields so that it removes the discontinuities appearing at the edges of the first-order triangular finite element. Furthermore, when the vector obtained by our post-processing scheme is used as a starting vector for the iterative matrix inversions, e.g., the successive overrelaxation and conjugate gradient methods, then covergence to a correct solution vector is extremely accelerated in our test examples.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3366-3368 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previously we proposed a new method which is based on the strategic dual image forcing an open boundary to close for the finite element solution of open boundary problems. In this paper the relationship between the strategic dual image and traditional electric image methods is clarified. This leads to a method of determining a hypothetical boundary for our strategic dual image method. Several examples demonstrate the versatility of our new method.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 846-850 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microscopic electrical activation efficiency of implanted Si atoms in undoped, liquid-encapsulated Czochralski-grown GaAs substrates was investigated by means of the threshold voltage (Vth) of implanted metal-semiconductor field-effect transistors as a function of stoichiometry and impurities, especially of carbon as determined by Fourier transform infrared (FT-IR) spectroscopy (≤2.5×1016 cm−3). The Vth scattering, which is related to the electrical activation efficiency dispersion, was small for an As-rich substrate grown from an As-rich melt, whether or not there existed a horizontal 3400-Oe magnetic field. The smallest amplitude of the Vth scattering occurred for the As-rich melt and did not vary with magnetic field. The Vth scattering with magnetic field was independent of carbon concentration (≤2.5×1016 cm−3). However, without magnetic field, an effect clearly appeared at low carbon concentration (nearly nondetectable). It seems that the Vth scattering or the electrical activation efficiency dispersion is dominated by the dispersion of stoichiometry, that is, composition, of the GaAs substrate because the electrical activation efficiency depends on the ratio of the Ga vacancy concentration and As vacancy concentration and the magnitude of their concentrations at the annealing temperature for the Si-implanted GaAs substrate. Therefore small Vth scattering means that the dispersion of the composition (Ga and As) is small. The composition dispersion for the most As-rich melt is small because the solidification is controlled by the straight As-rich side solidus line of the Ga:As composition-temperature phase diagram, and thus temperature variations of the GaAs melt in the pyrolytic boron nitride crucible are not as important. Also, there was no correlation between Vth scattering and dislocation density.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3174-3178 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Chua-type magnetization model is derived by means of a Fourier series while the magnetic flux density is sinusoidally varying with time. It is shown that this Chua-type model is well suited for practical computations of magnetodynamic field. A geometrical duality between the Delaunay triangles and associated Voronoi polygons is utilized to implement a dual energy finite element approach. As an example, the magnetodynamic fields in a toroidal reactor including the effects of transients, eddy currents, and hysteresis are computed.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2526-2528 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of gas flow parallel and transverse to the optical path and of the volume of the laser tube on N2 laser energy and pulse width was experimentally investigated. Energy enhancements of more than a factor of 2 are clearly seen in transverse flow as compared with parallel flow. Gas flowrate affects the energy more in lasers with a large volume. Pulse widths in lasers with transverse flow are shorter than those with parallel flow by about 2 ns. These results show that both the direction of gas flow and the volume of the laser tube are important parameters to adjust to increase energy and power.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    Dordrecht, The Netherlands : Blackwell Science Ltd
    International journal of cosmetic science 21 (1999), S. 0 
    ISSN: 1468-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The stability constants for the inclusion of fragrance materials with 2-hydroxypropyl-β-cyclodextrin (2HP-β-C yD) in aqueous solution have been determined by the static head-space method. The 1:1 stability constants obtained by this method were in reasonable agreement with the corresponding values in the literature. In addition, the release profiles of fragrance materials from 2HP-β-CyD aqueous solution were investigated using the dynamic head-space method. It was found that the suppression of the fragrance materials release was dependent on their stability constants.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1736-1739 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The breakdown of alumina rf windows being used in high-power rf systems of accelerators has been investigated. The puncture and the thermal fracture often taking place in s-band pulsed rf systems and in UHF cw rf systems, respectively, are found to be induced by alumina surface heating due to an electron multipactor bombardment accompanied by a luminescence of alumina. It is ascertained that TiN coatings on the alumina window suppress the multipactor, and that the window duration for breakdown is dependent on the microstruture of the alumina ceramic.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1621-1625 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Design criteria for a N2 laser with LC inversion excitation circuit are theoretically and experimentally described. Lower resistance, depending on the spark gap pressure, gave higher energy, while the inductance was independent of it. Laser energy increased with higher gas flow rate and was saturated at rates over 10 l/min. Other experimental relationships between pulse width, gas flow rate, energy, and repetition rate are described. Typically, an energy of 4.6 mJ, a peak power of 700 kW, a pulse width of 6.6 ns, and an efficiency of 0.18% was obtained at a repetition rate of 0.4 pps, a gas flow rate 10 l/min, and a voltage of 15 kV. For a higher repetition rate of 10 pps the parameters were 3 mJ, 400 kW, 7.5 ns, and 0.12%, respectively.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1143-1145 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-dependent tunneling has been investigated for nanostructured ferromagnetic tunnel junctions, in which an insulating nanostructured film made of layered hard ferromagnetic Co80Pt20 nanoparticles dispersed in an insulating SiO2 matrix is sandwiched between two soft ferromagnetic electrodes, an Fe/Co80Pt20 as a bottom electrode and a Co9Fe as a top electrode. The junctions investigated have three tunnel barriers and exhibited tunnel magnetoresistance of 9% at room temperature with a small resistance at a low field. The charging energy of the particles with an average diameter of 7 nm was estimated to be 45 meV from the temperature dependence of the resistance. Coulomb blockade was not observed for the junctions because of the low junction resistance. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3621-3626 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu ion implantation in LiNbO3 was done at widely different energies. Optical absorption spectra were measured in the visible range. Samples were heated to 500 °C in air for different times. Depth profiles and the electronic state of Cu for the samples at low ion energies were measured by x-ray photoelectron spectroscopy. Identification of the elements and measurement of the concentration of droplets on the surface were done by inductive coupled plasma spectroscopy. A large, sharp absorption peak is observed at 596 nm for the as-implanted sample at 3 MeV and a large, broad peak at 610 nm for the sample at 25 keV. These absorption peaks are explained in terms of Cu colloids formed in LiNbO3, but the electronic state of Cu in the implanted layer is not that of pure copper. Cu atoms segregate from the implanted layer to the surface, where they form small droplets. The droplet precipitation occurs even at room temperature and is accelerated at high temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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