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  • 1
    Electronic Resource
    Electronic Resource
    Production of polarized negative deuterium ion beam with dual optical pumping : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1362-1364 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: To obtain a highly nuclear-spin vector polarized negative deuterium ion beam, a dual optically pumped polarized negative deuterium ion source has been developed at KEK. It is possible to select a pure nuclear-spin state with this scheme, and a negative deuterium ion beam with 100% nuclear-spin vector polarization can be produced in principle. Thus far, we have obtained about 70% of the nuclear-spin vector polarized negative deuterium ion beam. This result may open up new possibilities for the optically pumped polarized ion source. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146667
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  • 2
    Electronic Resource
    Electronic Resource
    Longitudinal impedance tuner using new material FINEMET (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2988-2992 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We designed an impedance tuner consisting of an inductive material, FINEMET, to cancel the space charge impedance in the longitudinal direction. It was installed in the KEK Proton Synchrotron (PS) main ring. We observed the frequency shift of the coherent quadrupole oscillations and inferred the shift of the incoherent synchrotron oscillation. The total reactive impedance can be estimated as the coefficient between the shift and the beam intensity. The measured impedance is reduced from −j2475Ω to −j1182Ω by the impedance tuner which consists of 12 pieces of FINEMET cores. We demonstrated that the space charge impedance is compensated by the impedance tuner. This is the first time for FINEMET to be equipped with an accelerator component. One may think that the characteristics of FINEMET deteriorate under an environment with strong radiation generated by unavoidable beam loss. We have proved that the radiation dose not affect FINEMET even with a total neutron dose of 1.83×1012(n cm−2), which is considered to be the highest dose of the main ring. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149859
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  • 3
    Electronic Resource
    Electronic Resource
    Structural modification of ion-implanted and postannealed polycrystalline diamond studied by transmission electron microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1465-1468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have presented a convenient and effective method to ex situ study ion-implanted and postannealed polycrystalline diamond by transmission electron microscopy (TEM) without thinning the specimens. Chemical-vapor-deposited (CVD) diamond used for transmission electron microscopy study was directly deposited onto Mo TEM grids, and then implanted and postannealed. TEM images clearly reveal that there exists an ion-induced amorphous layer on the as-implanted CVD diamond surface, in which graphitelike structure is embedded. The amorphization processes depend on the irradiation conditions. Hydrogen plasma treatment was employed to anneal the as-implanted CVD diamond. High resolution electron microscopy images indicate that hydrogen plasma treatment can effectively remove the ion-induced surface amorphous layer without graphitizing the diamond. After treatment, high density ball-like diamond blisters appear on the surface, of which the average diameter is only about 2.5 nm, implying the critical size for the stable existence of CVD diamond crystallites may be on the order of a few atomic layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363014
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  • 4
    Electronic Resource
    Electronic Resource
    Fourth-harmonic generation of picosecond glass laser pulses with cesium lithium borate crystals (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3812-3814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fourth-harmonic generation of 1.5 ps, 1.053 μm glass laser pulses, where group velocity mismatch plays a significant role, at intensities up to 100 GW/cm2 using newly developed crystal, cesium lithium borate (CsLiB6O10). Type-I doubler and type-I quadrupler were used in the fourth harmonic generation experimental scheme. Energy conversion efficiencies of 24% and 53% have been achieved for frequency quadrupling and doubling of the fundamental glass laser pulses, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117113
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of boron doping on the crystal quality of chemical vapor deposited diamond films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2822-2824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron doping of chemical vapor deposited (CVD) diamond films plays an important role for modification of their electrical properties, as well as it improves crystallinity of the resulting films. A comparative study of crystalline quality has been made for boron doped and undoped CVD diamond. It is also found that the edge emission near 240 nm in cathodoluminescence (CL) is significantly intensified by boron incorporation. It is observed that the hydrogen plasma etching rate of B-doped CVD diamond is much smaller than the etching rate of undoped diamond. This proves the fact, that boron incorporation during CVD growth of diamond films can lead to better crystal quality. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116336
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  • 6
    Electronic Resource
    Electronic Resource
    Coherent Si growth on GaAs substrates by vapor phase deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 347-349 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Si layers with low dislocation density were grown on GaAs substrates by pyrolysis using disilane. The dislocation density evaluated from SECCO etching (HF:H2 SO4 :K2 Cr2 O7 =100 cc:50 cc:2g) was less than 104/cm2, which is lower by two orders of magnitude than that of the GaAs layer on Si substrates. We found that the electron mobility of Si layers on GaAs substrates could be raised by decreasing the growth rate and a high mobility value the same as that of a homoepitaxial layer was obtained, although the Si layers were contaminated by an arsenic impurity of 1018 cm−3 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100965
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  • 7
    Electronic Resource
    Electronic Resource
    A new connection rule of wave functions at a heterointerface and band discontinuity between GaAs and AlGaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 4087-4090 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new connection rule of wave functions at a heterointerface was developed. This connection rule satisfies the conservation of probability current and contains a nonparabolic effective mass of carriers as a natural consequence of the theory. The subband energies in a GaAs/AlGaAs quantum well calculated using our new connection rule are in excellent conformity with a wide range of experimental results with band discontinuity of 85% and an effective mass for hole of 0.34m0.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336716
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  • 8
    Electronic Resource
    Electronic Resource
    Optical properties of (AlAs)n(GaAs)n superlattices grown by metalorganic chemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2691-2695 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties were investigated on the superlattices with a unit lattice period of (AlAs)n(GaAs)n (n=1–24) which were grown by atmospheric-pressure metalorganic chemical vapor deposition. Raman spectroscopy indicated that superlattice structure is realized for each n without collapsing into alloys. Photoluminescence measurement indicated that the ultrathin-layer superlattice (with n larger than 2) has a direct energy gap, which is in good agreement with a tight-binding calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335905
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  • 9
    Electronic Resource
    Electronic Resource
    Optical properties of quantum wells with ultrathin-layer superlattice barriers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2503-2506 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single quantum wells of GaAs with barriers of (AlAs)2(GaAs)2 ultrathin-layer superlattices have been fabricated and photoluminescence measurement was performed. The photoluminescence energy was found to change almost linearly against the well width and the photoluminescence linewidth to get smaller with decreasing well width, which is in marked contrast to the case of a usual alloy-barriered single quantum well. It is indicated that the effective energy gap of the ultrathin-layer superlattice barrier decreases with the decreasing well width in such a structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336996
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  • 10
    Electronic Resource
    Electronic Resource
    High electron mobility in the selectively doped heterostructures grown by normal pressure metalorganic chemical vapor deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 334-337 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/AlGaAs heterostructure selectively doped with Si was grown in a conventional normal pressure metalorganic chemical vapor deposition using trimethyl metals and arsine. Mobility of the two-dimensional electron gas as high as 8100, 148 000, and 401 000 cm2/V s was obtained at 300, 77, and 5 K, respectively, for a sample with an undoped Al0.3Ga0.7As spacer layer of 100 A(ring) and with a sheet electron density of about 5×1011 cm−2. The heterostructure with the spacer layer thinner than 100 A(ring) shows high mobility comparable to the best values obtained by molecular-beam epitaxy. The influence of growth parameters on the electron mobility in the heterostructure is described in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337648
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