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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5021-5031 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current–voltage (I–V) characteristics in the ballistic limit of metal-oxide tunnel transistors are calculated as a function of temperature, potential barrier height, gate insulator thickness, aspect ratio, and oxide-channel shape. The saturation (‘knee') point and three modes of current transport across the device are discussed. For a given aspect ratio, the output impedance improves with increase in tunnel-oxide width, accompanied by slight decrease of gate transconductance. The net result is a significant improvement in the transistor gain. The gate transconductance improves with decrease in gate-insulator thickness, while approximately maintaining the output impedance. The net result is also a significant improvement in the transistor gain. Thus for a given aspect ratio, further device optimization to increase the transistor gain can be carried out by either increasing the tunnel oxide width or decreasing the gate insulator thickness. In practice, one preferably does both. A numerical study of the device performance of tapered-oxide devices is undertaken. We find that uniform-oxide channel design is generally superior to tapered-oxide channel designs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1133-1139 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The design criteria for large transconductance/high output impedance or high-gain operation of metal-oxide tunneling transistors is given. The dependence of the gate control on the aspect ratio of thickness to width of the tunneling oxide is investigated by computer simulation. This device structure can only operate similar to conventional semiconductor transistors for aspect ratio considerably less than one. It ceases to function as a transistor for larger aspect ratio due to insufficient penetration of the gate control field into the tunneling oxide. To demonstrate this, the current–voltage characteristics are computed for aspect ratios equal to 7/30, 1, 21/10, and the different tunneling-current behaviors compared with our experimental results on Ti/TiOx/Ti and Nb/NbOx/Nb tunnel transistors.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2124-2126 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient band-gap electroluminescence has been observed in n+-n−-n+ single-barrier tunneling devices. The electroluminescence arises from holes created by the impact ionization of electrons in large electric fields. From the voltage dependence of the electroluminescence the electric field dependence of the impact ionization rate is determined. Comparisons to theory are made.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1378-1382 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Voltage pulsed modification of surfaces in air with a scanning tunneling microscope has been studied with a view to understanding the physical processes involved. Incremented negative pulses have been applied to a tungsten tip to determine the threshold for feature writing on gold. The primary event observed with virgin tips is pit formation, which is interpreted as due to the transfer of gold cations from sample to tip. Subsequent pulsing establishes a threshold for a secondary process in which hillocks form on the gold surface and which are thought to be the result of gold anion retransfer from tip to sample. The thresholds are 4.16 and 3.92 V, respectively, for the two processes. For one particular tip, which gave rise to a Y-shaped pit, a three-dimensional profile was subsequently obtained by crashing it at a remote site on the surface and imaging the crater formed. The geometrical parameters of the tip, so elaborated, allowed a model of the electrostatic potential between tip and sample during pulsing to be numerically evaluated by solution of Laplace's equation and the field pattern over the surface to be determined. For the blunt pyramid involved, there is substantial anisotropy though modest field reduction at positions some nm from the projection of the tip on the surface. It is then a straightforward matter to understand the Y shape of the pit formed on the surface by the initial pulse. Field evaporation is thereby confirmed as the operative process. Reference experiments using gold tips showed no threshold difference between primary and secondary modification, a result consistent with the field evaporation mechanism. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1388-1390 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication of nanometer-scale side-gated silicon field effect transistors using an atomic force microscope is reported. The probe tip was used to define nanometer-scale source, gate, and drain patterns by the local anodic oxidation of a passivated silicon (100) surface. These thin oxide patterns were used as etch masks for selective etching of the silicon to form the finished devices. Devices with critical features as small as 30 nm have been fabricated with this technique. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1729-1731 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-scale Si structures have been fabricated by anodic oxidation with an atomic force microscope (AFM) and dry etching using an electron cyclotron resonance (ECR) source. The AFM is used to anodically oxidize a thin surface layer on a H-passivated (100) Si surface. This oxide is used as a mask for etching in a Cl2 plasma generated by the ECR source. An etch selectivity (approximately-greater-than)20 was obtained by adding 20% O2 to the Cl2 plasma. The AFM-defined mask withstands a 70 nm deep etch, and linewidths∼10 nm have been obtained with a 30 nm etch depth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3071-3073 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a nanometer-scale transistor that operates by using a gate field to modulate the transmission of electrons through a lateral metal/oxide tunnel barrier. Our initial devices have a 30-nm-wide lateral Nb/NbOx tunnel junction on top of a planar Al2O3/Al buried gate. We observe effective modulation of the source–drain current with gate bias at room temperature with negligible gate leakage current. We identify the materials issues that currently limit the device performance, and we offer direction for future device improvements.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3224-3226 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the measurement of the dynamics of free-space electro-optic field sensors for pulsed electromagnetic wave radiation. With an optical probe power spanning six decades of linearity and excellent signal-to-noise ratio (SNR), it is feasible to convert a far-infrared 2D image into an optical 2D image. A simple estimation indicates that 100 mW of optical probe power can achieve an image of 256×256 pixels with a 50 pA signal current per pixel and a SNR (approximately-greater-than)200. We also present a comparison measurement of an ultrafast photoconductive antenna and an electro-optic sensor crystal. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 593-595 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a high-repetition-rate (250 kHz) regenerative amplified laser with μJ pulse energy in a free-space THz beam electro-optic sampling system has produced a significant improvement in both the signal-to-noise ratio (〉105) and absolute probe beam photomodulation depth (〉19%). Focal plane images of the electric field distribution (strength and polarity) in dipole and quadrupole planar photoconductive emitters are presented. Preliminary results of real-time 2D THz images of moving objects have also been obtained. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 269-271 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication of atomic point contacts by using anodic oxidation of thin Al films with an atomic force microscope is reported. In situ electrical measurements were used as feedback to control the fabrication of Al nanowires that were subsequently anodized through their cross section to form point contacts. When the conductance of a point contact is reduced below ∼5×10−4 S it starts to decrease in discrete steps of ∼2e2/h. In some devices we are able to stabilize the conductance at a value near 2e2/h which corresponds to a single, atomic-sized conducting channel.
    Type of Medium: Electronic Resource
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