Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 2798-2800
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
It has been shown earlier that GeSi/Si resonant-cavity photodiodes can achieve high speed without sacrificing quantum efficiency. In this letter, we report a Si-based resonant-cavity photodiode that utilizes a Si/SiO2 Bragg reflector. This structure is more compatible with standard Si processing technology than the GeSi/Si resonant-cavity photodiodes. The absorbing region is a 1-μm-thick polysilicon layer that has been annealed to enhance secondary grain growth and the bottom mirror consists of three quarter-wavelength pairs of Si and SiO2. After annealing the dark current was 9 μA at 1 V, the peak quantum efficiency was 44%, and the bandwidth was (approximately-greater-than)1.4 GHz. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116847
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