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  • 1995-1999  (7)
  • 1985-1989  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    A new method of developing ultralow-loss glasses (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7129-7134 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new and effective method for developing ultralow-loss glasses for long-distance optical fiber systems is presented. The idea is based on the observed strong effect of a very small amount of alkaline or alkaline-earth impurities on structural relaxation of "frozen-in" density fluctuations. Efficiency of this method is demonstrated in the case of silica glass with Na2O of less than 50 wt. ppm, where the light scattering loss was reduced by 13% by the addition of only 10 wt. ppm ((approximate)1×10−3 mol %) Na2O. Various problems in developing ultralow-loss fiber materials in multicomponent glasses are avoidable in this method, since concentrations of dopants are very small. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365309
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of preirradiation and thermal annealing on photoinduced defects creation in synthetic silica glass (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3497-3501 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of preirradiation by ArF-excimer laser and thermal annealing on photoinduced defects creation in synthetic silica glass were investigated by optical absorption measurements. It has been confirmed that the durability for ArF-excimer laser irradiation can be improved by the preirradiation followed by annealing. The absorption spectra strongly suggest that a dominant role of the preirradiation should be to assist relaxations of weak parts in the glass such as strained Si–O–Si bonds. Furthermore, the photoinduced defects creation can be divided into two processes, and the preirradiation only suppresses the photoinduced defects creation in the first process. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371247
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  • 3
    Electronic Resource
    Electronic Resource
    Light-scattering study of the glass transition in silica, with practical implications (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3107-3112 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The glass transition in silica glass was investigated by light-scattering measurements, and relations between the glass transition temperature, fictive temperature, cooling rate, and viscosity in silica glass were clarified. Furthermore, the effect of OH ions on the structural relaxation was found to work in two ways: The OH ions reduce the activation energy of viscoelastic relaxation, and they also generate a new relaxation due to local structure change. Application of such a relaxational process due to impurities should be effective for controlling the performances of silica glass. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368465
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  • 4
    Electronic Resource
    Electronic Resource
    Dielectric relaxation in silica glass (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5983-5987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dielectric dispersion in silica glasses with various OH concentrations were investigated from 20 Hz to 1 MHz in the temperature range from 30 to 1000 °C. Dielectric relaxation, which could be attributed to the elementary process of structural secondary relaxation caused by OH motion, has the activation energy between 2.3 and 2.6 eV. ac and dc electrical conductivities and diffusion coefficient of OH have been deduced from the imaginary part of the dielectric constant. The ac electrical conductivity shows the characteristic feature as is usually observed in amorphous solids. The dc electrical conductivity and diffusion coefficient of OH derived therefrom obey the Arrhenius law with the activation energy of 1.0±0.2 eV in the temperature range from 350 to 1000 °C. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371643
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  • 5
    Electronic Resource
    Electronic Resource
    Structural relaxation enhanced by Cl ions in silica glass (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1209-1211 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of Cl ions on the structural relaxation in silica glass was investigated by observing the fictive temperature, which was determined from the position of infrared absorption peak around 2260 cm−1 related to the average Si–O–Si bond angle. It has been found that Cl ions reduce the relaxation time of the long-range cooperative relaxation due to viscous flow, the so-called α relaxation. Moreover, Cl ions reduce the relaxation time of a subrelaxational process, caused by local structural relaxation. Although Cl has been used in industry only for dehydrating silica glass for optical fibers, these structural relaxation enhanced by Cl may be used advantageously to develop ultralow-loss fiber glass. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122129
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  • 6
    Electronic Resource
    Electronic Resource
    Reduction of light-scattering loss in silica glass by the structural relaxation of "frozen-in" density fluctuations (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3504-3506 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependences of light-scattering intensity in silica glasses were measured over a wide temperature range from 300 to 1 900 K. It was found that in OH-free silica glass, the diffusive density fluctuations are completely "frozen-in" at the glass transition temperature, while in OH-containing glass, OH gives rise to the structural relaxation of these "frozen-in" density fluctuations over 400 K below the glass transition temperature. This structural relaxation, expected to be caused by the introduction of some dopants with the same role of OH, can be used for reduction of the light-scattering loss in silica fibers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119214
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  • 7
    Electronic Resource
    Electronic Resource
    Defect formation in GeO2–SiO2 glass by poling with ArF laser excitation (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 993-995 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated formation of Ge-related defects in a GeO2–SiO2 glass fiber preformed by poling with ArF laser excitation. Electric field dependence of the induced-defect concentrations was measured by means of the optical absorption. Several color centers such as the germanium electron-trapped centers and the Ge E′ center were induced. Concentrations of the induced germanium electron-trapped centers and Ge E′ center increase with increasing the electric field. Conversion efficiency from the germanium electron-trapped centers to the Ge E′ center was found to be independent of the electric field. The present result strongly suggests that the poling with ArF laser excitation is effective in the present GeO2–SiO2 glass for the formation of germanium electron-trapped centers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119749
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  • 8
    Electronic Resource
    Electronic Resource
    Surface tension of liquid4He. Surface energy of the Bose-Einstein condensate (1985)
    Springer
    Journal of low temperature physics 61 (1985), S. 155-169 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The surface tension of liquid4He was measured by means of surface-wave resonance, and the relative variation showed excellent agreement with that previously obtained by a precise capillary-rise method. The absolute value of the surface tension at absolute zero was measured as 354.4±0.5 mdyne/cm, 6% smaller than the previous value. The surface energy associated with the Bose-Einstein condensate wave function was found to dominate the surface tension in the superfluid phase. The condensate fraction other than in the vicinity of the λ point was estimated asn 0(0)-n 0(T)=A(T/T λ)α, withn 0(0)=0.125±0.025,A=0.177±0.047, and α=5.07±0.17.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00682735
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  • 9
    Electronic Resource
    Electronic Resource
    Sound attenuation in3He-4He liquid mixtures under pressure (1986)
    Springer
    Journal of low temperature physics 63 (1986), S. 535-551 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The attenuation of sound was measured in3He-4He mixtures with3He concentrations ranging from 2.89 to 8.03% at pressures of 10 and 20 bar. The quasiparticle interaction potentials were then determined at each pressure by analyzing the sound attenuation data. The superfluid transition temperature of3He and other properties in the mixtures were then estimated from the interaction potentials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00681497
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  • 10
    Electronic Resource
    Electronic Resource
    Surface tension of liquid4He nearT λ (1986)
    Springer
    Journal of low temperature physics 63 (1986), S. 129-137 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The surface tension of liquid4He in the neighborhood of the λ transition temperature was measured with very high precision by the surface-wave resonance method. The derivative of the surface tension with respect to temperature decreases by 21.1±0.8 mdyn/cm K as the temperature is increased from Tλ − 20 mK to Tλ + 20 mK. The regular part of the surface tension near Tλ is considered to consist of two parts, a ripplon contribution σR and a “bulk” contribution σB. In the present analysis, the singular part exists only below Tλ, and is proportional to (Tλ − T)1.3±0.1. This behavior seems to be related to the Bose-Einstein condensate or the superfluid density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00682066
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