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  • 1
    Electronic Resource
    Electronic Resource
    Moiré interferometry of short wavelength Rayleigh–Taylor growth : Proceedings of the 12th topical conference on high temperature plasma diagnostics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 637-641 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: One of the most critical quantities to be measured for better understanding of the ablative Rayleigh–Taylor (RT) instability is the cutoff wavelength below which the RT instability is stabilized. Unfortunately, this wavelength is expected to be below or close to spatial resolutions of most x-ray imagers used in the RT experiments. We propose and test a new technique using moiré interferometry to convert short wavelength perturbations to longer wavelength perturbations. The RT target is backlit by x rays and imaged just like in conventional experiments, but a grid mask is inserted between the target and the x-ray imager. The grid mask is one dimensional grid with a period slightly different from the wavelength of the RT target. It is set so that the grid and the RT perturbation groove are parallel to each other. With this operation, the long wavelength moiré interference is measured as the beat with the RT target. As an initial test, we use a grid mask with 10 μm period coupled to RT targets with 8 and 12 μm perturbation wavelengths. The corresponding moiré interference wavelengths are 40 and 60 μm, respectively.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149434
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  • 2
    Electronic Resource
    Electronic Resource
    Growth, microstructure, and strain relaxation in low-temperature epitaxial Si1−xGex alloys deposited on Si(001) from hyperthermal beams (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 812-821 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Si1−xGex(001) alloy films, with 0.15≤x≤0.30, were grown on Si(001) at temperatures Ts ranging from 300 to 550 °C using hyperthermal Si (average energy 〈ESi〉(approximately-equal-to)18 eV) and Ge (〈EGe〉(approximately-equal-to)15 eV) beams. The deposition rate was 0.1 nm s−1 and film thicknesses ranged from 30 nm to 0.8 μm. The energetic Si and Ge beams are generated by bombarding Si and Ge targets with 1 keV Kr+ ions from double-grid, multiaperture, broad ion-beam sources in a system geometry established based upon TRIM simulations of energy-dependent angular distributions of sputtered and backscattered particles. A combination of high-resolution plan-view and cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, Rutherford backscattering spectroscopy, channeling, and axial angular-yield profiles demonstrated that the films are of extremely high crystalline quality. Critical layer thicknesses hc for strain relaxation in these alloys were found to increase rapidly with decreasing growth temperature. For Si0.70Ge0.30, hc ranged from 35 nm at Ts=550 °C to 650 nm at 350 °C compared to an equilibrium value of (approximately-equal-to)8 nm. At even lower growth temperatures, hc becomes larger than critical epitaxial layer thicknesses, (approximately-greater-than)1 μm at 300 °C. In addition, atomic force microscopy studies showed that strain-induced roughening, which occurs at elevated growth temperatures, is strongly suppressed at Ts between 300 and 400 °C with no indication of kinetic roughening. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362918
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of ion energy and arrival rate on the composition of zirconium oxide films prepared by ion-beam assisted deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1177-1181 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin zirconium oxide films were grown using the ion-beam assisted deposition method. Zirconium metal was evaporated by an electron beam and condensed on a Si substrate, while oxygen ions were directed simultaneously onto the substrate, allowing the fundamental deposition parameters of ion energy and arrival rate ratio ARR(O/Zr) to be measured and controlled easily. X-ray photoelectron spectroscopy (XPS) was used to study the oxidation and the composition of the films. XPS analyses indicated the presence of four oxidation states of zirconium (Zr4+−Zr1+) in Zr 3d spectra and two peaks in O 1s spectra; Zr4+ is a predominant ion in all the films and the two peaks in O 1s spectra are related to the oxide and to hydroxyl groups and/or carbonates, respectively. Composition analyses of the films suggested that these oxygen-associated species may be bound to zirconium. The variation of composition as a function of ion energy (from 2 to 20 keV) and ARR(O/Zr) (at 0.54 and 1.09) could be explained with the preferential sputtering of zirconium from the growing film by incoming oxygen ions and the incorporation of oxygen ions into the film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362855
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  • 4
    Electronic Resource
    Electronic Resource
    Dependence of magnetic properties of Co-Pt films on sputtering conditions (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4022-4024 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic properties, Young's modulus, and corrosion resistance of Co-Pt films deposited by targets-facing type of sputtering (TFTS) have been investigated. The films deposited at a Ar gas pressure PAr of 2 mTorr present good surface smoothness and dense texture. The c axis of the hexagonal crystallites in the film orients normal to the film plane. The films have nearly the same value of Young's modulus (≈17×1011 dyn/cm2) as that of the bulk Co-Pt alloy. On the other hand, the films deposited at PAr of 30 mTorr exhibit rough surface and columnar structure and do not exhibit any preferred orientation of crystallites. In addition, they have a small value of Young's modulus (≈5×1011 dyn/cm2) and poor corrosion resistance compared with the film deposited at low PAr. They have coercive force Hc larger than 1 kOe, which is mainly caused by their porous structure. Besides, the Co-Pt films have large in-plane uniaxial magnetic anisotropy, which is caused by both dc magnetic field applied to substrate during deposition and oblique incidence of sputtered particles upon substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334658
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of additional element (Fe, Zr, Ta) for Co-Cr films deposited by targets facing type of sputtering (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4019-4021 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to improve both magnetic properties and wear resistance of Co-Cr films for perpendicular magnetic recording media, the effect of the addition of a small amount of Fe, Zr, and Ta to the Co-Cr binary alloy films has been investigated. They were deposited with a targets facing type sputtering (TFTS) apparatus. (i) The addition of a small amount of Fe (〈5 at. %) causes a significant decrease of the effective perpendicular magnetic anisotropy K⊥ (K⊥=Ku−2πM2s). The K⊥ has a negative value at Fe content above 1 at. %. Consequently, the recording characteristics become worse as Fe content increases. (ii) The addition of Zr leads to a remarkable decrease of grain size and improvement of surface smoothness along with an increase of wear resistance. It also causes evident decrease in Ku and saturation magnetization Ms. However, both K⊥ and remanence ratio Mr⊥/Mr(parallel) are increased by the addition of a small amount of Zr up to 0.5 at. %, though they decrease steeply with further increase of Zr content above 1 at. %. (iii) The addition of Ta shows almost the same tendency as Zr for the film structure and wear resistance. It also causes the decrease of Ku. But the K⊥ increases with an increase of Ta content up to 0.5 at. % and takes nearly constant value at Ta content above 0.5 at. %, since the Ms of the film decreases remarkably as Ta content increases. Mr⊥/Mr(parallel) increases gradually from 2.5 to 3.6 as Ta content increases. Consequently, the addition of a small amount of Ta is effective for improving both recording characteristics and wear resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334657
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  • 6
    Electronic Resource
    Electronic Resource
    Ba–ferrite thin-film disk for perpendicular magnetic recording (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4040-4042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The authors have prepared Ba–ferrite film disks and evaluated their magnetic read/write characteristics. The c-axis-oriented Ba–ferrite thin films were formed epitaxially on c-axis-oriented ZnO films by means of a targets-facing-type sputtering system. The direction of easy magnetization in the film with perpendicular crystalline anisotropy is almost perpendicular to the film plane. Thus, the perpendicular remanence is more than 60 times as large as the in-plane one. The simple Ba–ferrite films, however, have a coercive force, Hc⊥ above 2 kOe which is too large to write on by means of a conventional head. The substitution of In3+ in the Ba–ferrite films makes the Hc⊥ values decrease to about 1 kOe without increasing the critical temperature, Tcritical, of c-axis orientation. The read/write characteristics of the films were measured with a MnZn–ferrite ring head. The reproduced signal exhibits clear dipulsive waveforms as the dipulse ratio exceeds 0.7. Furthermore, the overwrite ratio decreases below −28 dB for the In3+-substituted Ba-ferrite film disk. The Ba–ferrite film disks have promising potential as a high-density perpendicular magnetic recording medium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334664
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  • 7
    Electronic Resource
    Electronic Resource
    Second polar body retention and gynogenesis induced by thermal shock in pink salmon, Oncorhynchus gorbuscha (Walbaum) (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Aquaculture research 26 (1995), S. 0 
    Details
    ISSN: 1365-2109
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Insemination of oocytes from six different salmon with irradiated heterospecific sperm combined with thermal shocks 10 min after activation successfully induced gynogenesis in pink salmon, Oncorhynchus gorbuscha (Walbaum). Biochemical genetic analysis and morphology of larvae con firmed their gynogenetic parentage, Thermal shocks of 26oC beginning 10 min after fertilization and lasting 15-30 min gave high yields of gynogenetic salmon (32% of normal diploid hatching, average of six females; 70% in oocytes from one female treated 20 min): shocks of 28oC lasting 10-16 min also gave high yields (2 5%), Shocks of 30oC lasting 6-12 min gave lesser yields (10%), Female donors varied significantly in the susceptibility of their oocytes to treatment (15-70% range of yield to average best treatment) but females did not interact significantly with heat shock treatment: different heat shocks had relatively the same effect on all females.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2109.1995.tb00904.x
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  • 8
    Electronic Resource
    Electronic Resource
    Absolute configuration of the active stereoisomer of new rice fungicide Carpropamid (1999)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 55 (1999), S. 1025-1027 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270199002504
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  • 9
    Electronic Resource
    Electronic Resource
    Gravitationally redshifted emission implying an accretion disk and massive black hole in the active galaxy MCG63015 (1995)
    [s.l.] : Nature Publishing Group
    Nature 375 (1995), S. 659-661 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Recent optical and radio observations2 4 of gas motions show a large, central concentration of mass (probably a black hole) in a number of galaxies. But this gas lies beyond ~30,000 Schwarzschild radii so the characteristic signatures of the black hole itself-relativistic ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/375659a0
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  • 10
    Electronic Resource
    Electronic Resource
    Electroless deposition of Ni–B, Co–B and Ni–Co–B alloys using dimethylamineborane as a reducing agent (1998)
    Springer
    Journal of applied electrochemistry 28 (1998), S. 559-563 
    Details
    ISSN: 1572-8838
    Keywords: electroless Ni–Co–B alloy ; dimethylamineborane ; complexing agent ; deposition rate ; crystal structure
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract Fundamental aspects of electroless Ni–B, Co–B and Ni–Co–B alloys have been systematically examined. The composition, crystal structure and deposition rate of the alloys were determined as a function of the concentration of reducing agent (dimethylamineborane) and complexing agents (tartrate, citrate, malonate and succinic acid), bath pH and Ni2+/Co2+ ratio. Changes in the deposition rate and metallurgical features of the alloys induced by the change in plating parameters are discussed, based on electrochemical polarization data and the formation enthalpy of the nickel and cobalt borides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1003233715362
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