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  • 1995-1999  (95)
  • 1980-1984  (29)
  • 1970-1974  (4)
  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3379-3385 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser ablation of NiO at 266 nm has been studied by measuring absorption spectra and emission spectra which are resolved both temporally and spatially. The spectra were measured at several points 1 mm apart from the laser spot and with several detection angles. Ablated species in different electronic states such as the ground state, lower lying states, and excited states are distinguished from absorption and emission spectroscopy. Time-of-flight spectra of these species and their angular dependence are obtained. It is revealed that excited Ni neutrals are generated mainly by the recombination of Ni+ ions with electrons, and Ni+ ions ejected nearly normal to the surface are exclusively excited due to multiple collisional effect. The isotropic angular dependence of most probable velocities of Ni+ ions and Ni neutrals are explained by ambipolar diffusion of the plume. The mechanism of species ejection is also discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 12
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present magnetotransport properties, with emphasis on Hall effect, of a new class of III–V based magnetic (GaMnAs)/nonmagnetic (AlAs) semiconductor superlattices (SLs) grown by low-temperature molecular beam epitaxy. The SLs having relatively wide (GaMn)As layers (≥70 Å) are ferromagnetic at low temperatures, and their hole concentrations and Curie temperatures are estimated through the analysis of Hall measurements. The dependence of the magnetic and transport properties on the GaMnAs well width is discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 764-771 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co–Ag granular films having various Co grain sizes are prepared by rf sputtering under various sputtering conditions. The Co grain sizes are derived from the magnetization curves by dividing them into ferromagnetic and superparamagnetic components. As the Co content decreases, the radii of the superparamagnetic Co grains, rg, decrease and the distances between the Co grains, tg, increase. The magnetoresistance is proportional to the volume density of superparamagnetic grains or related to krg3 exp(−tg/l) with k=3.8×102 μΩ/cm2 and l=20 Å, implying that the giant magnetoresistance is caused by the spin-dependent scattering in the inner part of the superparamagnetic Co grains as well as at the grain surfaces. Furthermore, it is found that the extraordinary Hall effect arises mainly from the side jump mechanism, and that significant perpendicular magnetic anisotropy appears in the Co composition range between 40 and 70 at %. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3349-3351 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown ferromagnetic MnAs thin films on Si(001) substrates by molecular beam epitaxy. Epitaxial monocrystalline MnAs films with the growth plane of (1¯101) were obtained when the Si surface was first exposed to an As4 flux and then Mn and As4 fluxes were codeposited. It was found that the very first monolayer of As on Si(001) plays an essential role to obtain epitaxial MnAs thin films. Magnetization measurements indicate that the easy axis of the MnAs thin films is in-plane, along the [1¯1¯20] of MnAs and the [110] of Si, normal to the substrate misorientation. The M-H curve of a 300-nm-thick film shows a hysteresis with a saturation magnetization Ms of 694 emu/cm3 and a coercive field Hc of 94 Oe, when the magnetic field is applied along the easy axis. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 64-66 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures on GaAs(111)B substrates by molecular beam epitaxy. The epitaxial orientations of MnAs and GaAs are (0001) and (111), respectively, as expected. It was found that epitaxial monocrystalline GaAs can be grown on the As-rich (3×2)-(0001) MnAs surface. Cross-sectional images by transmission electron microscopy showed that the trilayers are formed as intended with fairly smooth and atomically abrupt interfaces. Double-step features were observed in magnetization characteristics due to the difference in coercive force between the top and bottom MnAs layers. The interlayer coupling was small when the thickness of the GaAs spacer layer was 5–10 nm. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 674-676 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nondestructive determination of the polarity of GaN has been achieved by the use of coaxial impact-collision ion scattering spectroscopy analysis. The polarity of a GaN film with a smooth surface on non-nitrided c-plane sapphire was identified (0001) (Ga face; +c). GaN films with a 20 nm buffer layer on nitrided sapphire had (0001¯) (N face; −c) polarity and a hexagonal faceted surface. The influence of both the buffer layer and of substrate nitridation on the polarity of wurtzite {0001} GaN films deposited by two-step metal organic chemical vapor deposition (MOCVD) has been investigated. The polarity of the buffer layer on a nitrided sapphire substrate was altered by varying its thickness or the annealing time. It was found that the polarity of the GaN film is determined by the polarity of the annealed buffer layer; MOCVD-GaN films on buffer layers with +c and −c polarity have either +c (smooth surface) or −c (hexagonal facet) polarity, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of muscle foods 9 (1998), S. 0 
    ISSN: 1745-4573
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: In order to produce a strong and elastic gel from low quality walleye pollock surimi, use of chitosan was examined. The strength of gels was nearly doubled by the addition of 1.5% chitosan when salted surimi pastes were set below 25C. In contrast, chitin did not cause any changes in the physical texture of gels. When salted surimi pastes containing 1.5% chitosan were set at 20C, a large decrease in the proportion of myosin heavy chain was observed with a concomitant increase in components with molecular weights heavier than myosin heavy chain. Since the addition of EGTA, an inhibitor of transglutaminase, to surimi reduced gel strength and minimized myosin heavy chain polymerization, it is suggested that the enhancing effect ofchitosan on the gel formation of walleye pollock surimi could be due to the activity of the endogenous transglutaminase known to be present in this surimi.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of clinical periodontology 24 (1997), S. 0 
    ISSN: 1600-051X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract Mechanical stimulation with a toothbrush was applied to each quadrant of 10 dogs at a force of 200 g for 10 s using following modalities: vibration at attached gingiva. pressurization at attached gingiva. vibration at marginal gingiva and no treatment as a control. Hemoglobin oxygen saturation (SO2) in the gingiva was measured by non-invasive tissue reflectance spectrophotometry. Simultaneously, oxygen tension (PO2) in gingival tissue was monitored with an oxygen microelectrode. Both SO2 and PO2 increased within 10–20 min after stimulation and then slowly returned to the initial level at all treatment sites. The response was most prominent after vibration at attached gingiva. SO2 and PO2 increased by 12% and 42%. respectively, and significant increase continued for 75–85 min. Response after vibration at marginal gingiva was moderate in PO2 and transient in SO2. Pressurization at attached gingiva caused moderate response in SO2. but the increase in PO2 was slight. Control showed little change in both indices. These results suggest that vibration with a toothbrush at attached gingiva may cause a maximal response in improving oxygen sufficiency to gingival tissue.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    British journal of dermatology 136 (1997), S. 0 
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Patients with atopic dermatitis (AD) constantly inflict mechanical damage to their skin by scratching induced by pruritus. On excoriated lesions of the cheek we found exceedingly high levels of transepidermal water loss (TEWL) as compared to those in the normal skin of healthy subjects. However, it is not clear whether the skin of patients with AD also shows an abnormally slow recovery after mechanical damage. We compared the recovery of the barrier function of the stratum corneum (SC). after its complete removal by tape stripping, in patients with AD and age-matched healthy control subjects. On the normal-looking skin of the flexor forearm, we found no difference in the recovery process of the water barrier function of the SC between the two groups. This suggests that ability to reconstruct SC barrier function after mechanical damage is not impaired in AD patients.
    Type of Medium: Electronic Resource
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  • 20
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Both the cuffed oropharyngeal airway and the laryngeal mask airway share a similar property of being less stimulating to the upper airway than the tracheal tube. This study was conducted to compare sevoflurane concentrations required for insertion of the cuffed oropharyngeal airway and the laryngeal mask airway in elderly and young adult patients. Forty-one elderly (65–90 years) and 34 young adult (18–50 years) patients, scheduled for elective surgery during spontaneous breathing anaesthesia were randomly assigned to either the cuffed oropharyngeal airway or the laryngeal mask airway group. After a predetermined end-tidal concentration of sevoflurane had been established and maintained for at least 20 min, insertion of the device was attempted without neuromuscular relaxants or other adjuvants. Each concentration at which insertion of the device was attempted was predetermined by modification of Dixon's up-and-down method with 0.5% as the step size. Sevoflurane MACCOPA [mean 1.17 (SD 0.38)%, 0.77–1.56% (95% CI)] was significantly less than MACLMA [2.00 (0.52)%, 1.45–2.55%, p 〈 0.05] for elderly patients. Similarly, sevoflurane MACCOPA [1.33 (0.38)%, 0.94–1.73%] was significantly less than MACLMA [2.00 (0.42)%, 1.56–2.44%, p 〈 0.05] for young adult patients. There were no significant differences in either MACCOPA or MACLMA between the elderly and the young adult patients. We conclude that the insertion of the cuffed oropharyngeal airway can be accomplished at a lower sevoflurane concentration, and hence, is less stimulating to the upper airway than that of the laryngeal mask airway.
    Type of Medium: Electronic Resource
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