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  • 1
    Electronic Resource
    Electronic Resource
    Photochemistry on rough metal surfaces (1984)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 4200-4209 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150663a003
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  • 2
    Electronic Resource
    Electronic Resource
    The drying rates of component parts of inflorescence-bearing tillers of Italian ryegrass (1984)
    Oxford, UK : Blackwell Publishing Ltd
    Grass and forage science 39 (1984), S. 0 
    Details
    ISSN: 1365-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Inflorescence-bearing tillers of Italian ryegrass (Lolium multiflorum cv. RvP) were dried in controlled temperature, relative humidity and air speed conditions chosen to be within the range likely to occur in a hay swath drying in the field. After drying for increasing intervals the tillers were separated into inflorescence, exposed flowering stem, leaf-laminae, leaf-sheath and flowering stem enclosed by leaf-sheath and the drying rates of these components in addition to that of whole tillers were measured. There were large differences in drying rate between components, but the differences were similar over the range of drying conditions employed. The drying rate of the inflorescence as well as that of stem enclosed by leaf-sheath was found to be very low and that of leaf-laminae and leaf-sheath very high.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2494.1984.tb01692.x
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  • 3
    Electronic Resource
    Electronic Resource
    The influence of the epidermis on the drying rates of red clover leaf petioles and stems and of Italian ryegrass stems at low water contents (1984)
    Oxford, UK : Blackwell Publishing Ltd
    Grass and forage science 39 (1984), S. 0 
    Details
    ISSN: 1365-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Previous results with red clover (Trifolium pratense) leaflets, leaf petioles and stems indicated that the epidermis continued to impose a barrier to water loss at low water contents. Further experiments with red clover leaf petioles and stems suggest that cuticular wax is the epidermal component concerned and that treatments which remove or merely modify this will also increase drying rate. However, when treatments to reduce epidermal resistance were applied to pseudostems and flowering stems of Italian ryegrass (Lolium multiflorum) the initial increase in drying rate produced was not sustained at low water contents. The pseudostems consisted of three layers of leaf material rolled one within the other and the true flowering stems were surrounded by one leaf sheath. Their pattern of response to treatments suggested that these affected only the outer sheath, which produced an initial acceleration in drying rate, but that this was not sustained after the outer sheath was dry because the lower untreated layers dried in a similar way to untreated controls.The results suggest the possibility of devising practical treatments to increase drying rate at low water contents with crops containing a high proportion of leaf or stem not surrounded by leaf sheath. Devising such treatments for crops with a high proportion of grass pseudostem or flowering stem surrounded by leaf sheath will be considerably more difficult.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2494.1984.tb01666.x
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  • 4
    Electronic Resource
    Electronic Resource
    The influence of the epidermis on the drying rate of red clover leaflets, leaf petioles and stems at low water contents (1982)
    Oxford, UK : Blackwell Publishing Ltd
    Grass and forage science 37 (1982), S. 0 
    Details
    ISSN: 1365-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: An apparatus is described which enables excised pieces of plant material lo be weighed al frequent intervals as they dry in controlled conditions of temperature, humidity and air-speed. The effect of removing the epidermis on the drying rate of red clover (Trifolium pratense) leaflets, leaf petioles and stems is examined. Initially this treatment caused a very large increase in the drying rate of leaflets. Although the effect declined as water content fell, leaflets from which the epidermis had been removed still dried more rapidly than the controls at a water content equivalent to 50% of the dry weight. Removing the epidermis had a greater effect on the drying rate of leaf petioles and stems at low water contents than it did on the drying rate of leaflets.Slow drying at low water contents is a major factor responsible for the undesirably long periods for which hay may lie in the field. Slow drying occurs even though swath microclimate becomes more favourable for drying as water content falls. The results presented here suggest that treatments which reduce cuticular resistance have the potential to reduce field drying time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2494.1982.tb01591.x
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  • 5
    Electronic Resource
    Electronic Resource
    Pathways of water loss from legumes and grasses cut for conservation (1980)
    Oxford, UK : Blackwell Publishing Ltd
    Grass and forage science 35 (1980), S. 0 
    Details
    ISSN: 1365-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2494.1980.tb01487.x
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical characteristics of metal/AlN/n-type 6H–SiC(0001) heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2873-2875 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal/AlN/n-type 6H–SiC(0001) heterostructures have been prepared by growing wurtzite AlN layers on vicinal 6H–SiC(0001) using gas-source molecular beam epitaxy. High-resolution transmission electron microscopy results show that the interface between the AlN layer and the Si-terminated 6H–SiC substrate is microstructurally abrupt, but contains defects originating at step sites on the 6H–SiC surface. The interface is found to have a low density of trapped charges of 1×1011 cm−2 at room temperature without any postgrowth treatment. This value is comparable to those reported for thermally grown and deposited oxides on n-type 6H–SiC(0001), and indicates the formation of a high quality interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117347
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of porous silicon carbide (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2250-2252 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed investigation of the dependence of the photoluminescence from porous silicon carbide on preparation conditions and starting material is presented. Porous silicon carbide prepared from different polytypes shows almost identical emission spectra, demonstrating a clear impedance of the band-gap energy of a particular SiC polytype. Emission bands with peak energies of 2.43, 2.22, 2.07, and 1.93 eV were resolved with the use of selective excitation by tuning the excitation wavelength. The origin of luminescence is suggested to relate to defect states produced at the etched surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113182
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  • 8
    Electronic Resource
    Electronic Resource
    Exciton lifetimes in GaN and GaInN (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 840-842 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results from temperature dependent photoluminescence (PL) transient measurements on metalorganic vapor phase epitaxy grown epitaxial layers of GaN and GaInN are reported. In sufficiently pure GaN layers the free-exciton PL dominates even at the lowest temperatures (2 K), and the intrinsic excitonic lifetimes can be obtained. We report a value of about 125 ps for the radiative lifetime of the free exciton in GaN at 2 K, as obtained from the PL transients of a 3 μm buried undoped GaN layer sandwiched between AlN and GaInN. The PL decay time in the ternary alloy GaInN, which is dominated by localized excitons at low temperatures, is much longer, about 500 ps. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115522
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  • 9
    Electronic Resource
    Electronic Resource
    SiC power device passivation using porous SiC (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1501-1502 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique for the passivation of high power SiC p-n diodes using porous SiC is demonstrated. An increase from around 250 to 600 V in the reverse breakdown voltage is observed following the passivation treatment. The breakdown mode is also reversible in the passivated case in contrast to the permanent degradation in the nontreated device. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113668
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  • 10
    Electronic Resource
    Electronic Resource
    Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-ozone cleaning (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2141-2143 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The preoxidation cleaning of silicon carbide surfaces (3C, 4H, 6H polytypes) by exposing them to ultraviolet radiation and oxygen is shown to produce a significant improvement in the electronic properties of SiC/SiO2 interfaces. It is found that this treatment results in a removal of defect species, otherwise present at the SiC surface after thermal oxidation of SiC. Carbon clusters are proposed as the attacked species responsible for a substantial part of the SiC/SiO2 interface states. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115611
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