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  • 1
    Electronic Resource
    Electronic Resource
    Low energy electron-enhanced etching of Si(100) in hydrogen/helium direct-current plasma (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2475-2477 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low energy electron-enhanced etching of Si(100) has been achieved by placing the sample on the anode of a dc discharge in hydrogen/helium mixtures. Over a broad range of gas composition, gas pressure, and discharge current, nonpatterned samples gave etch yields of 0.01–0.02 atoms/electron, and average etch rates of 2000–3000 A(ring)/min. Postetch examination by atomic force microscopy revealed surface roughness of 2–3 nm. These results are related to incident flux of H atoms and electrons through a simple model of the anode sheath layer above the sample. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114000
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  • 2
    Electronic Resource
    Electronic Resource
    Ultrafast absorption in free-standing porous silicon films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1966-1968 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafast absorption studies on free-standing porous silicon films have been carried out at room temperature to investigate the carrier dynamics and the luminescence mechanism. Ultraviolet and visible excitations were used on an as-prepared sample and two annealed samples. Transient absorption curves of UV pumped, as-prepared samples contain a fast decay (τf) of 0.8±0.2 ps and a slower decay of (approximately-greater-than)30 ps. τf is found to be shorter for both the 500 °C annealed sample with UV excitation and for the as-prepared sample with visible excitation. The faster decay rates suggest that the subpicosecond component of the transient absorption may be due to carrier thermalization rather than core-to-surface state excitation transfer. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114755
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  • 3
    Electronic Resource
    Electronic Resource
    Mössbauer experiments on57Fe in the giant moment system Ni75-x Fe x Ga25 (1973)
    Springer
    The European physical journal 259 (1973), S. 323-332 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Mössbauer experiments on57Fe on the giant moment system Ni75-x Fe x Ga25 were performed. For various Fe concentrationsx the hyperfine fields, the isomeric shift, and the quadrupole splitting were measured. A saturation hyperfine field of 223 (2) kOe at the Fe atom substituting a Ga site and of 200 (2) kOe at the Fe atom substituting a Ni site were found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01395938
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  • 4
    Electronic Resource
    Electronic Resource
    Das Quadrupolmoment des 2,3 MeV-Zustandes in120Sn (1970)
    Springer
    The European physical journal 232 (1970), S. 256-267 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Time differentialγγ-angular correlation measurements have been performed to determine the electric interaction of the 2.3 MeVI=5− state of120Sn in different polycristalline antimony compounds. A calibration of the field gradient was achieved by Mößbauerexperiments with the 23.8 keVI=3/2+ state in119Sn using identical sources. From the ratio of the measured electric interactions the ratio of the quadrupole moments is deduced as: $$\left| {\frac{{Q(2.3{\mathbf{ }}MeV level,{\mathbf{ }}I = 5^ - ,^{120} Sn)}}{{Q(2.8{\mathbf{ }}keV level,{\mathbf{ }}I = {3 \mathord{\left/ {\vphantom {3 2}} \right. \kern-\nulldelimiterspace} 2}^ + ,^{119} Sn)}}} \right| = 2.86(15)$$ . Using 0.06 (2) b for the quadrupole moment of the 23.8 keV level in119Sn one gets for the quadrupole moment of the 2.3 MeV level in120Sn ¦Q(2.3 MeV level,I=5−,120Sn)¦=0.021 (8) b.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01391523
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  • 5
    Electronic Resource
    Electronic Resource
    Determination of theL-shell conversion coefficient for the 26 keV Mössbauer transition in161Dy (1971)
    Springer
    The European physical journal 248 (1971), S. 370-374 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract TheL-shell conversion coefficient of the 26 keV Mössbauer transition in161Dy has been determined to be αL=2.4 −0.2 +0.3 by coincidence techniques using high resolution Ge(Li) and Si(Li) detectors. With theoretical values for theM- andN-shells the total conversion coefficient is calculated to be αtot=2.9 −0.2 +0.3 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01400551
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  • 6
    Electronic Resource
    Electronic Resource
    Electron and hole doping in NiO (1995)
    Springer
    The European physical journal 97 (1995), S. 83-93 
    Details
    ISSN: 1434-6036
    Keywords: 79.60 ; 71.20 ; 71.28
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have investigated hole doped (by lithium) and electron-doped (by nickel metal) NiO with photoemission (PES), inverse photoemission (IPES) and low and high energy electron energy loss spectroscopy (EELS). Both types of doping create empty states approximately in the middle of the charge transfer gap of undoped NiO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01317591
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  • 7
    Electronic Resource
    Electronic Resource
    XPS investigation of simple metals (1978)
    Springer
    The European physical journal 30 (1978), S. 145-154 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The x-ray photoemission spectra of the valence band region of Be, Na, Mg, and Al have been measured and are analysed in terms of existing band structures. This allows an accurate determination of the band width of these metals and of the relative photoionisation cross sections (atħω γ=1487 eV) for the electrons of different angular momentum in the bands. It is found empirically that the many body effects in the valence bands are of similar magnitude as observed in the core level spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01320979
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  • 8
    Electronic Resource
    Electronic Resource
    The XPS valence band spectra of Hf metal and HfC x N y O z compounds and the correlation to their superconductivity (1979)
    Springer
    The European physical journal 33 (1979), S. 241-250 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The x-ray photoemission spectra of the valence bands of Hf metal and of several HfC x N y O z compounds have been measured and are compared to existing band structure calculations. The density of states at the Fermi energy of the HfC x N y O z compounds correlates strongly to their superconducting transition temperatureT c . A calculation of theT c values within the frame work of strong coupling superconductors indicates that the phonon spectrum and the electron phonon interaction is approximately constant within the series HfC x N y O z .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01323499
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  • 9
    Electronic Resource
    Electronic Resource
    X-ray excited photoelectron spectra of LiNbO3: A quantitative analysis (1979)
    Springer
    The European physical journal 35 (1979), S. 51-59 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract X-ray excited photoelectron spectra (XPS) using monochromatized Al — K α radiation (ℏω =1,486.7 eV) have been analysed quantitatively. The intensities of the various core lines (Li(1s), O(1s), O(2s), Nb(3s), Nb(3p), Nb(3d), Nb(4s), Nb(4p)) normalized to the intensity of the Nb (3d 5/2)-line, show good agreement with those calculated with theoretical values for the photoabsorption cross section of the free atoms and the theoretical estimates of the dependance of the electron escape depth on the electron kinetic energy. From the energy loss spectra observed at the high binding energy side of the XPS core lines the energy loss function Im {−1/ε(ω)} is calculated and compared to published optical data. This comparison yields directly the total electron escape depth as function of the electron energy over a large energy range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01322081
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  • 10
    Electronic Resource
    Electronic Resource
    XPS investigation of simple metals (1978)
    Springer
    The European physical journal 30 (1978), S. 129-143 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The theory for the photoemission process is inspected taking into account many body effects. Simple equations for the analysis of experimental spectra are deduced which allow to determine the relative importance of the many body effects to the observed spectrum. The core level spectra for Be, Na, Mg and Al metal are analysed quantitatively yielding the magnitude of the intrinsic and extrinsic contribution to the plasmon creation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01320978
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