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  • 1
    Electronic Resource
    Electronic Resource
    Transient picosecond/subpicosecond Raman scattering studies of nonequilibrium electron distributions and phonons in CdTe (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3840-3843 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonequilibrium electron distributions and phonons in CdTe have been studied by transient picosecond/subpicosecond Raman spectroscopy at T=300 K. Our experimental results show that for photoexcited electron–hole density of n(approximately-equal-to)1018 cm−3, the electron distributions can be reasonably well described by Fermi–Dirac distribution functions with effective electron temperature substantially higher than the lattice temperature. From an ensemble Monte Carlo analysis of the nonequilibrium phonon population as a function of photoexcited electron–hole pair density, the LO phonon lifetime in CdTe has been deduced to be τ(approximately-equal-to)0.75±0.25 ps. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363338
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  • 2
    Electronic Resource
    Electronic Resource
    Role of Surface Effects in the Inelastic Background of X-ray Photoelectron Spectroscopy (1996)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 24 (1996), S. 490-496 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: We have derived a new deconvolution formula to obtain the original no-loss XPS spectra, the so-called source function, by taking surface effects into account. With this formula the primary XPS spectra of Au 4d and Au 4f are carried out from the experimental data. The primary excitation spectra are compared to the results derived by Tougaard’s method in which surface effects were neglected. The present result is markedly different from Tougaard’s result, which consists of a tail extending ∽50 eV below the peak. The result reveals that the influence of surface effects on the background removal of the spectra is considerably significant for the energy range ∽50 eV below the peak energy. It is also found that the large tail in Tougaard’s results can be essentially removed when surface effects are considered.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Above-barrier states in GaAs–AlGaAs superlattices studied by photoconductivity and photoreflectance (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1460-1462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that the quasibound states at the above-barrier region in AlGaAs–GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. We provide concrete evidence to confirm that free-carrier confinement at barrier layer does exist. It is also found that the barrier-width dependence of the above-barrier transition energies can be described quite well by the modified Messiah's calculation. However, the simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370965
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  • 4
    Electronic Resource
    Electronic Resource
    Properties of the second-order nonlinear optical susceptibility χ(2) in asymmetric undoped AlGaAs/InGaAs double quantum wells (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1467-1471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The second-order nonlinear optical susceptibility χ(2) for second-harmonic generation is calculated for the 11H transition of a graded double quantum well (DQW) structure of undoped GaAs/AlxGa1−xAs. These results are compared with the single quantum well (QW). Our results show that the values of χ(2) have optimal magnitudes dependent on the width, depth and separation between the QWs in a DQW structure. When the electric field increases, the dipole moment increases due to the increasing separation between the electron and hole wave functions. On the other hand, the oscillator strength of the 11H transition is reduced as a result of the decrease in the overlap of the electron and hole envelope functions. These two competing factors give rise to optimal conditions for the enhancement of the second-order nonlinear susceptibility χ(2). It is demonstrated that χ(2) for the DQW structure is more enhanced than for the biased single QW. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370914
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  • 5
    Electronic Resource
    Electronic Resource
    Electron swarm parameters in SF6/Ne mixtures determined by swarm experiment (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6611-6612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron swarm growth processes in SF6/Ne gas mixtures have been studied by a pulsed Townsend method over the range 8≤E/P≤140 V mm−1 kPa−1, where E is the electric field and P is the gas pressure. The variation patterns as a function of the pressure reduced electric field of the effective ionization coefficient α¯, electron drift velocity, Ve, and longitudinal diffusion coefficient DL in SF6/Ne gas mixtures have been given. The dielectric strength of SF6/Ne gas mixtures has also been determined, which varies linearly with SF6 concentration in the gas mixtures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371632
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  • 6
    Electronic Resource
    Electronic Resource
    Perpendicular magnetic anisotropy of Co–Ag granular thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5048-5050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The perpendicular magnetic anisotropy constant in giant magnetoresistive granular Co22Ag78 thin films is found to increase and then decrease with annealing temperature, the maximum being about 5×105 ergs/cc at an annealing temperature of about 600 K. The observation of domain patterns by magnetic force microscopy is consistent with this result. The origin of the perpendicular magnetic anisotropy is not clear, but suggested to be in an anisotropic Co–Co particle distribution and also due to a surface anisotropy of Co particles. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370087
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  • 7
    Electronic Resource
    Electronic Resource
    Toroidal Alfvén eigenmodes in TFTR deuterium–tritium plasmas : The 39th annual meeting of division of plasma physics of APS (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 1703-1711 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Purely alpha-particle-driven toroidal Alfvén eigenmodes (TAEs) with toroidal mode numbers n=1–6 have been observed in deuterium–tritium (D–T) plasmas on the tokamak fusion test reactor [D. J. Grove and D. M. Meade, Nucl. Fusion 25, 1167 (1985)]. The appearance of mode activity following termination of neutral beam injection in plasmas with q(0)〉1 is generally consistent with theoretical predictions of TAE stability [G. Y. Fu et al. Phys. Plasmas 3, 4036 (1996)]. Internal reflectometer measurements of TAE activity is compared with theoretical calculations of the radial mode structure. Core localization of the modes to the region of reduced central magnetic shear is confirmed, however the mode structure can deviate significantly from theoretical estimates. The peak measured TAE amplitude of δn/n∼10−4 at r/a∼0.3−0.4 corresponds to δB/B∼10−5, while δB/B∼10−8 is measured at the plasma edge. Enhanced alpha particle loss associated with TAE activity has not been observed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872818
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  • 8
    Electronic Resource
    Electronic Resource
    Saturation of alpha particle driven instability in Tokamak Fusion Test Reactor (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 629-632 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nonlinear theory of kinetic instabilities near threshold [Berk et al., Plasma Phys. Rep. 23, 842 (1997)] is applied to calculate the saturation level of toroidicity-induced Alfvén eigenmodes (TAE), and to be compared with the predictions of δf method calculations (Y. Chen, Ph.D. thesis, Princeton University, 1998). Good agreement is observed between the predictions of both methods and the predicted saturation levels are comparable to experimentally measured amplitudes of the TAE oscillations in Tokamak Fusion Test Reactor [D. J. Grove and D. M. Meade, Nucl. Fusion 25, 1167 (1985)]. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873216
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  • 9
    Electronic Resource
    Electronic Resource
    Dielectric studies of Zn1−xMnxSe epilayers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1630-1633 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the dielectric properties of Zn1−xMnxSe(0≤x≤0.78) epilayers, by capacitance and dissipation factor measurements at temperature 5 K〈T〈475 K and frequency 20 Hz〈f〈100 kHz. A Debye-like relaxational contribution to the dielectric response is observed, which requires the presence of charge redistribution. The relaxation is found to be a thermally activated process, and the activation energies obtained from the dissipation factor and capacitance are in good agreement. The capacitance is found to increase with a decrease in test frequency. From our results it is established that the dielectric response is caused by carrier hopping among structural defects. A monotonic variation is found in the relationship between the activation energy and the Mn concentration. This monotonic variation is interpreted in terms of the four-center model, in which the number of Mn atoms appearing in the nearest-neighbor sites of the defect can have four possible configurations. The measured defect behavior reflects the overall average of all energy levels involved in the center, and the result is weighted by the relative concentrations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370938
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  • 10
    Electronic Resource
    Electronic Resource
    Growth and photoluminescence study of ZnTe quantum dots (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4694-4696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnTe quantum dots embedded in ZnS were grown successfully by controlling the flow duration in a metalorganic chemical vapor deposition system. Blueshift as large as 250 meV was observed in photoluminescence measurement, and the emission persists up to room temperature. The amount of blueshift decreases with increasing quantum dot size and for large quantum dots, no photoluminescence could be detected. From studying the temperature-dependent integrated intensity of the emission spectra, it is found that the activation energy for the quenching of photoluminescence increases with decreasing quantum dot size, and is identified as the binding energy of exciton in ZnTe quantum dot. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371422
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