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Digitale Medien

Precipitation of dissolved alkali salts and fullerenes on surfaces of doped porous matter (1996)

Fink, D. ; Klett, R. ; Mathis, C. ; [weitere]

Springer

Applied physics 62 (1996), S. 191-195

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ISSN: 1432-0630

Schlagwort(e): 81.35 ; 66.30 ; 81.30 ; 61.46

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Standard porcelain samples burnt at different temperatures were doped with LiCl, organo-Li solutions, or with fullerene solution and then dried. The depth profiles of both Li and fullerene were determined. The distributions of the incorporated dopants strongly depend on the samples' porosity. Additional ultrasonic treatment during the diffusion process has a fatal influence on the porcelain structure, resulting in enhanced dopant uptake of the remaining sample. The surface-near shape of the depth profiles is interpreted by solvation, i.e., by precipitation of the dissolved salts or fullerenes in the surface-near zone during the drying process. It is shown that the solvation effect is important only in the case of media with high porosity.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01575080

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Digitale Medien

Influence of energetic ions on grafting to polyethylene (1996)

Fink, D. ; Klett, R. ; Müller, M. ; [weitere]

Springer

Applied physics 63 (1996), S. 441-446

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ISSN: 1432-0630

Schlagwort(e): 61.40 ; 61.80 ; 66.30 ; 81.60

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Li salts of acrylic acid were grafted to polyethylene, PE. It is known that li is mobile in this material at room temperature, and hence can act as a probe for newly introduced defects. After irradiation of PE(Li) with 100 keV He+ ions at different fluences the Li depth distributions were measured by NDP. Changes in the Li distributions are observed which are ascribed to bonding at oxygen, the latter one preferentially penetrating into the PE via the irradiation-damaged sample surface. With increasing sample age, i.e. after exposure to ambient atmosphere for more than half a year, Li appears to lose its original mobility.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01571671

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Digitale Medien

Boron electrical activation in dual B+ + N+ and B+ + Ar+ ion-implanted silicon (1996)

Odzhaev, V. B. ; Popok, V. N. ; Prosolovich, V. S. ; [weitere]

Springer

Applied physics 62 (1996), S. 355-358

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ISSN: 1432-0630

Schlagwort(e): PACS: 61.80.Jh; 73.25

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract. Silicon wafers were implanted with 40 keV B+ ions and then with 50 keV N+ or 100 keV Ar+ ions to doses from 1.2×1014 to 1.2×1015 cm-2. The implanted samples were studied using the Hall effect and standard van der Pauw methods. The dependences of the sheet resistivity and the sheet concentration of charge carriers on the annealing temperature in the range from 700 to 1300 K were obtained. Models describing the influence of additional implantation of nitrogen and argon ions on the process of boron electrical activation during annealing are proposed.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01594233

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