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  • 1995-1999  (2)
  • 1970-1974
  • 81.30  (1)
  • PACS: 61.80.Jh; 73.25  (1)
  • 1
    ISSN: 1432-0630
    Keywords: 81.35 ; 66.30 ; 81.30 ; 61.46
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Standard porcelain samples burnt at different temperatures were doped with LiCl, organo-Li solutions, or with fullerene solution and then dried. The depth profiles of both Li and fullerene were determined. The distributions of the incorporated dopants strongly depend on the samples' porosity. Additional ultrasonic treatment during the diffusion process has a fatal influence on the porcelain structure, resulting in enhanced dopant uptake of the remaining sample. The surface-near shape of the depth profiles is interpreted by solvation, i.e., by precipitation of the dissolved salts or fullerenes in the surface-near zone during the drying process. It is shown that the solvation effect is important only in the case of media with high porosity.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    ISSN: 1432-0630
    Keywords: PACS: 61.80.Jh; 73.25
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Silicon wafers were implanted with 40 keV B+ ions and then with 50 keV N+ or 100 keV Ar+ ions to doses from 1.2×1014 to 1.2×1015 cm-2. The implanted samples were studied using the Hall effect and standard van der Pauw methods. The dependences of the sheet resistivity and the sheet concentration of charge carriers on the annealing temperature in the range from 700 to 1300 K were obtained. Models describing the influence of additional implantation of nitrogen and argon ions on the process of boron electrical activation during annealing are proposed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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