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  • 1995-1999  (2)
  • 1965-1969
  • 74.80.Fp  (1)
  • PACS. 73.23.Hk Coulomb blockade; single-electron tunneling - 73.40.Rw Metal-insulator-metal structures  (1)
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  • 1995-1999  (2)
  • 1965-1969
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  • 1
    ISSN: 1090-6487
    Keywords: 74.80.Fp ; 74.50.+r
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Normal (N) metallic (Ag) mesoscopic conductors with two superconducting (S) faces (Al), arranged mirror-symmetrically relative to the streamlines of the current, periodically switch into the normal state as the superconducting phase difference Δϕ between the NS boundaries approaches the values Δϕ =(2n+1)π, n=0,1,2,..., irrespective of temperature and applied voltage. For Δϕ =2nπ and low applied voltages the conductance passes through a maximum and approaches the normal value as temperature decreases (reentrance). As the voltage subsequently increases, the conductance increases and passes through a maximum. As the phase difference moves away from the values Δϕ=2nπ, the maxima shift in the direction of low temperatures and voltages. The latter result shows unequivocally that in our metal structures it is necessary to take into account the next-order corrections to the “weak” proximity effect approximation.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 8 (1999), S. 627-633 
    ISSN: 1434-6036
    Keywords: PACS. 73.23.Hk Coulomb blockade; single-electron tunneling - 73.40.Rw Metal-insulator-metal structures
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: A single electron transistor based on Al-AlOx-Nb tunnel junctions was fabricated by shadow evaporation and in situ barrier formation. Its output current noise was measured, using a transimpedance amplifier setup, as a function of bias voltage, gain, and temperature, in the frequency range (1-300) Hz. The spot noise at 10 Hz is dominated by a gain dependent component, indicating that the main noise contribution comes from fluctuations at the input of the transistor. Deviations from ideal input charge noise behaviour are found in the form of a bias dependence of the differential charge equivalent noise, i.e. the derivative of current noise with respect to gain. The temperature dependence of this effect could indicate that heating is activating the noise sources, and that they are located inside or in the near vicinity of the junctions.
    Type of Medium: Electronic Resource
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