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  • 1
    Electronic Resource
    Electronic Resource
    Compensation centers in ZnSeTe (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5993-5999 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extended x-ray absorption fine structure (EXAFS), Rutherford-backscattering ion channeling, and particle induced x-ray emission channeling (PIXE/C) measurements have been performed in order to investigate compensation centers in Cl doped ZnSeTe. The EXAFS results from Cl doped ZnSeTe suggest that almost all Cl atoms are incorporated into substitutional Se lattice sites, which seems to indicate that Cl atoms themselves are not responsible for the compensation centers. The PIXE/C angular profiles were measured across the 〈100〉, 〈110〉, and 〈111〉 axes for undoped ZnSeTe. Comparing the angular profiles for Zn Kα, Se Kα, and Te Lα x-ray yields, it was found that some portion of the Te atoms (∼1020 cm−3) are located at tetrahedral interstitial sites. From these results, the difficulty of realizing n-type ZnSeTe is considered to be due to the existence of the interstitial Te atoms which act as acceptors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371645
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  • 2
    Electronic Resource
    Electronic Resource
    The low electric field conduction mechanism of silicon oxide-silicon nitride-silicon oxide interpoly-Si dielectrics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3912-3914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the leakage current of silicon oxide-silicon nitride-silicon oxide (ONO) dielectrics at low electric fields ((approximately-equal-to)2 MV/cm) was successfully developed. It is proposed that two transition mechanisms occur simultaneously. One is the detrapping of electrons from the silicon dangling bond in amorphous silicon nitride (SiN), which corresponds with the transition of dangling bonds among three possible charge states. The second is the direct tunneling of the detrapped electrons from the SiN to the gate through the thin silicon oxide. Both the location and the energy levels of the defect state are taken into account. The energy level, and the intrinsic time constant of the Si dangling bond and the uniform trap density in SiN, can be obtained by comparing the experimental results of the ONO discharge current with the calculated ones based on the above model. It can be found that the energy levels for negatively charged and neutral Si dangling bonds (E− and E0), with respect to the SiN conduction band, are 1.2 and 2.0 eV, respectively, the intrinsic time constants t− and t0 are 1.0×10−14 and 4.0×10−13 s, respectively, and the uniform trap density is 4.0×1019/cm3. From the energy level difference between E− and E0, we can conclude that the effective correlation energy of the Si dangling bonds in SiN is 0.8 eV, which is consistent with Robertson's results based on a tight binding calculation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359908
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  • 3
    Electronic Resource
    Electronic Resource
    Detection of hot electron current with scanning hot electron microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2196-2198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning hot electron microscopy (SHEM) has been proposed as an experimental technique which allows for detection of hot electrons emitted from a subsurface semiconductor structure, thus making it possible to obtain the spatial distribution of hot electrons in a device. Here we present the experimental evidence of SHEM operation. Hot electrons with energies of 3 eV are injected by means of a Si/CaF2/Au heterostructure and subsequently detected at the tip of a scanning tunneling microscope in the SHEM configuration. The measured hot electron current was approximately 4 pA for a tunnel current of 5 nA. These results, although still of a preliminary nature, show the potential of SHEM as a technique suitable for the visualization of electron wave effects in semiconductor structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117163
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  • 4
    Electronic Resource
    Electronic Resource
    Formation and observation of 50 nm polarized domains in PbZr1−xTixO3 thin film using scanning probe microscope (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2358-2359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer size polarized domains were written in a PbZr1−xTixO3 (PZT) thin film using an atomic force microscope (AFM) and the relationship between the polarized domain and the grain of the film was investigated. The polarized domain was formed by applying a pulse voltage to the ferroelectric PZT thin film through a conductive AFM tip. The polarized domain structure was observed by imaging the piezoelectric-induced surface vibration by an AFM with an ac voltage applied between the tip and the bottom electrode of a sample. The polarized domains with a diameter of 50 nm were written within a single grain. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115857
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  • 5
    Electronic Resource
    Electronic Resource
    Growth and characterization of 10-nm-thick c-axis oriented epitaxial PbZr0.25Ti0.75O3 thin films on (100)Si substrate (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3524-3526 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 10-nm-thick PbZr0.25Ti0.75O3 thin film is epitaxially grown on a SrRuO3/BaTiO3/ZrO2/Si heterostructure substrate by reactive evaporation. Structural and electrical properties of the film are investigated. It is concluded that the film is ferroelectric and retains a native uniform upward polarization. Artificial downward polarization domains, whose average diameter is 24 nm, can be formed in the film. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122824
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  • 6
    Electronic Resource
    Electronic Resource
    Advances in Polarized Electron Sources (1995)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Nuclear and Particle Science 45 (1995), S. 41-88 
    Details
    ISSN: 0163-8998
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ns.45.120195.000353
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  • 7
    Electronic Resource
    Electronic Resource
    Studies on Interaction Parameters of Poly(N-isopropylacrylamide) in 1-Propanol–Water Mixtures by Small-Angle X-ray Scattering (1997)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 30 (1997), S. 712-716 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Small-angle X-ray scattering from semidilute solutions of poly(N-isopropylacrylamide) in 1-propanol–water mixtures has been measured in a poor-solvent regime. The binary and ternary cluster integrals of polymer segments were determined from the concentration dependence of the correlation length at several temperatures just below the lower critical-solution temperature. The contributions of the segment–segment interactions to the entropy Sint and enthalpy Hint have been calculated from the temperature dependence of interaction parameters (binary and ternary cluster integrals) and it has been found that both values are positive. The dependence of Sint on the concentration of propanol does not show a simple linear relationship.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889897001398
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  • 8
    Electronic Resource
    Electronic Resource
    Human Sexual Behaviour, Delayed Fertilization and Down's Syndrome (1969)
    [s.l.] : Nature Publishing Group
    Nature 221 (1969), S. 642-644 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The idea that delayed fertilization is correlated with the incidence of Down's syndrome has been examined closely in the light of the demonstration that frequency of marital coitus follows a Poisson ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/221642a0
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  • 9
    Electronic Resource
    Electronic Resource
    A case of infantile Dubin-Johnson syndrome with high CT attenuation in the liver (1997)
    Springer
    Pediatric radiology 27 (1997), S. 345-347 
    Details
    ISSN: 1432-1998
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract We report a case of Dubin-Johnson syndrome (DJS) with severe infantile cholestasis and elevated computed tomography (CT) attenuation of the liver. Increased levels of urinary coproporphyrin I were found as well as pigment granules in the hepatocytes and hepatosteatosis. The CT attenuation was markedly higher in the liver of this patient at the ages of 3 and 7 months than in the spleen or kidneys. This high attenuation may be a finding specific to infantile DJS and, therefore, abdominal CT may be helpful in the diagnosis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002470050147
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  • 10
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy of GaN on a substrate of MoS2 layered compound (1999)
    Springer
    Applied physics 69 (1999), S. 89-92 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.15.Hi; 81.05.Ea; 61.72.Lk; 68.55.-a
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The feasibility of MoS2 layered compound as a substrate for GaN growth was investigated. GaN films were successfully grown on MoS2 by plasma-enhanced molecular beam epitaxy and the crystal quality of GaN on MoS2 was compared with that on Al2O3. For GaN grown on MoS2 substrate, it was found that the surface flatness observed by atomic force microscopy, stress in the film measured by Raman spectroscopy, optical properties measured by photoluminescence spectroscopy, and threading dislocation density observed by transmission electron microscopy show superior properties compared with that grown on Al2O3. These results suggest the layered compound such as MoS2, which has no dangling bonds on the surface and has lattice mismatching of 0.9% to GaN, has high potential for a substrate of GaN growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050976
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