ISSN:
1432-0630
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
0.2 Ga0.8As and Ga0.5In0.5P layers grown by metal organic vapor phase epitaxy. On the AlGaAs layers, we have found large homogeneous areas with typical diameters of 2–5 nm that have a low Al concentration. These areas are surrounded by dipole-like pairs of enhanced and depressed As atoms. We have also found extended Al-related defects along the [1 2] and [ 12] directions and propose a model structure containing small platelets of AlAs on {111} planes. On the GaInP2 layers, with ordering parameter of γ=0.42, we have been able to image the natural superlattice on the atomic scale in filled-state images as alternating enhanced and depressed P rows. In addition, we have found a long-period modulation induced by electronic contrasts, with a typical wavelength of about 4 nm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390051274
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