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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 24 (1952), S. 1847-1849 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 11 (1999), S. 1051-1064 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arclength continuation methods are used to conduct a detailed branching study of standing wave solutions for fluids in a rectangular container, using depth and crest acceleration as control parameters. At each depth the applicable acceleration range extends between zero and one, and a number of multiple solution structures are uncovered. An intimate connection is established between these structures and the phenomenon of harmonic resonance. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 485-488 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new gated x-ray framing camera has been developed at the Lawrence Livermore National Laboratory for use at the Nova laser facility. This diagnostic, the flexible x-ray imager, has been designed as a modular unit that can be rapidly reconfigured to change the spectral response, magnification, sensitivity, and spatial and temporal resolutions of the instrument. The electrical gate pulse width may be varied from 200 ps to 2 ns depending upon whether the experimental emphasis is on temporal resolution or sensitivity. The long integration times are particularly useful in experiments where motional blurring occurs over even longer time scales. A detailed description of the instrument and its varied uses is presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3191-3195 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The atomic force microscope (AFM) is calculated to have quantum limited sensitivity using common optical detection techniques. Under typical ambient operating conditions, the AFM is shown to have an energy resolution better than 10−24 J, considerably weaker than the energy of 10−21 J/molecule for the weakest chemical bonds. For operation in vacuum, periodic forces of 10−15 N are detectable at room temperature. At 4.2 K it is possible to resolve single bursts of energy of 10−25 J. The AFM is shown to have many features in common with a resonant-bar gravitational wave antenna. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 76 (1954), S. 3722-3725 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 76 (1954), S. 3725-3728 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 73 (1951), S. 2964-2965 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 74 (1952), S. 2282-2286 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7763-7769 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Calculations of the effects of external stress on the current–voltage characteristics of double-barrier (001)- and (111)-oriented resonant tunneling devices are presented. Crystal strains arising from the application of external pressure and, in pseudomorphic structures, lattice mismatch cause shifts in the conduction and valence bands of the well and barrier layers with respect to the unstrained alignment. For certain stress orientations piezoelectric effects give rise to internal electric fields parallel to the current direction. The combined piezoelectric and band-structure effects modulate the transmission resonances which control the shape of the current versus voltage characteristics of the structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4244-4252 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a device model to describe polymer light-emitting diodes (PLEDs) under bias conditions for which strong electrical injection does not occur (i.e., reverse, zero, and weak forward bias). The model is useful to interpret: capacitance–voltage measurements, which probe the charged trap density in the PLEDs; electroabsorption measurements on PLEDs, which probe the built-in electric field in the device; and internal photoemission measurements, which probe the effective Schottky barriers at the contacts of the PLED. The device model is based on the low-density nondegenerate continuum model for the electronic structure of polymers. Polarons and bipolarons are the principal charged excitations in this model. Polarons are singly charged excitations which play the primary role in charge injection and in experiments such as internal photoemission which probe single particle interface properties. Bipolarons are doubly charged excitations which can play an important role in establishing Schottky barriers at metal/polymer interfaces. In the device model, the region of the polymer near each contact is assumed to be in quasiequilibrium with that contact. The charge density as a function of position is found from the electrostatic potential and equilibrium statistics. Poisson's equation is integrated to determine the electrostatic potential. We find that a large charge density is transferred into the polymer if the chemical potential of a contact is higher than the negative bipolaron formation energy per particle or lower than the positive bipolaron formation energy per particle. The transferred charge pins the Fermi level and establishes the effective Schottky barrier. If the contact chemical potential is between the formation energy per particle of the two types of charged bipolarons, there is little charge transfer into the polymer and the Fermi level is not pinned. The electric field in the device is found for different contacts and bias conditions. Capacitance as a function of voltage is calculated for various trap binding energies and densities. The calculated results are used to interpret recent measurements on PLEDs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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