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  • 1995-1999  (3)
  • 72.70  (1)
  • Hinterkammerlinsen  (1)
  • multireference perturbation theory  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Ultraschallbiomikroskopie (UBM) zur Lokalisation der Kunstlinsenhaptik nach transskleraler Nahtfixation (1997)
    Springer
    Der Ophthalmologe 94 (1997), S. 41-44 
    Details
    ISSN: 1433-0423
    Keywords: Schlüsselwörter Ultraschallbiomikroskopie ; Kataraktchirurgie ; Hinterkammerlinsen ; Key words Ultrasound-biomicroscopy ; Cataract-surgery ; Posterior-chamber-lenses
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Correct positioning of transscleral haptics for sulcus fixation of IOL haptics may be difficult due to lack of visual control by the surgeon. We determined the haptic sites in eyes which underwent secondary IOL implantation with transscleral suturing using ultrasound biomicroscopy (UBM) (Humphrey Instruments, Inc., San Leandro, CA, USA). Eighteen eyes of 17 patients were included in the study. The follow-up time ranged from 1 to 36 months (mean: 7 months). The positions of 36 IOL-haptics were documented by UBM examination. Twelve haptics (33%) were found in the sulcus, whereas 18 haptics (50%) were located posteriorly to the sulcus. Six haptics (17%) were identified anteriorly to the sulcus. There were no complications resulting from dislocation. In one of the eyes, suture infection occurred requiring surgical revision and antibiotic therapy.
    Notes: Die korrekte Positionierung der Linsenhaptiken bei transskleraler Nahtfixierung ist schwierig, da sich die Nahtführung im Sulcus ciliaris und hinter der Iris der Beobachtung durch den Operateur entzieht. Wir haben 17 Patienten (18 Augen) nach transskleraler Haptikfixierung mit dem Humphrey-Ultrasound-Biomicroscope (UBM) (Humphrey Instruments, San Leandro, CA, USA) untersucht. Die Nachbeobachtungszeit betrug zwischen 1 und 36 Monaten (Mittel: 7 Monate). Neben der Haptikposition wurde der intraokulare Druck registriert. 12 von 36 Haptiken (33%) waren im Sulcus ciliaris lokalisiert. 18 Haptiken (50%) wurden hinter dem Sulkus gefunden. Anteriore Lokalisationen (hintere Iriswurzel) wiesen 6 Haptiken (17%) auf. Komplikationen , die aus diesen Fehlpositionierungen resultieren könnten, sahen wir nicht. In einem Fall trat eine infektiöse Infiltration des Stichkanals auf, die eine operative Revision und systemische Antibiotikagabe notwendig machte.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003470050082
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    CuGaSe2 solar cells with 9.7% power conversion efficiency (1996)
    Springer
    Applied physics 62 (1996), S. 181-185 
    Details
    ISSN: 1432-0630
    Keywords: 72.70 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Heterojunctions, such as ZnO/CdS/CuGaSe2, were fabricated for photovoltaic applications. Optimization of device structures based on monocrystalline CuGaSe2 led to the highest-to-date power conversion efficiencies for CuGaSe2 solar cells. At room temperature under 100 mW/cm2 AM1.5 illumination a maximum cell efficiency of 9.7% was achieved, given by an open-circuit voltage of 946 mV, a short circuit current density of 15.5 mA/cm2, and a fill factor of 66.5%. Preparation and performance of the optimum device are described. Current voltage characteristics dependent on illumination intensity and temperature, spectral response and electron-beam-induced current measurements were performed to determine the device parameters as well as to analyse the current transport and loss mechanisms. Tunneling, assisted by defect levels in the CdS layer, seems to play a major role. High injection effects are observed at forward bias ofV 〉 0.5 V or an illumination level ofP 〉 10 mW/cm2. Under such conditions, as well as at low temperatures, the non-zero series resistance comes into play. Effects of the shunt resistance, however, are negligible in all cases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01575717
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Scaling behavior of dynamic correlation effects (1998)
    New York, NY : Wiley-Blackwell
    International Journal of Quantum Chemistry 70 (1998), S. 147-157 
    Details
    ISSN: 0020-7608
    Keywords: dynamic correlation effects ; perturbation theory ; MBPT ; multireference perturbation theory ; scaling theory ; Chemistry ; Theoretical, Physical and Computational Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: We present an analytical estimate of the intrinsic errors of second-order perturbation theory in the complete basis set limit in the framework a scaling theory, which employs the maximal “sharpness” of the orbitals in a given basis set, quantified by the average momentum, as its fundamental variable. We find that the intrinsic errors of second-order perturbation theory fall with the third inverse power of the maximal momentum representable in the basis set, while the basis set truncation errors fall with the second inverse power of the momentum. These analytical arguments are verified in a numerical investigation employing distributed basis sets of up to 600 orbitals for the helium atom, water, and ethene. Extending our analysis to generic multireference perturbation theory (MRPT) we find that the leading contribution for the relaxation of the orthogonal complement of the zero-order wave function in the primary space scales with the same power as the leading overall perturbative correction, which yields an analytical argument for the perturbation inclusion of such feedback effects in the formulation of efficient versions of MRPT.   © 1998 John Wiley & Sons, Inc. Int J Quant Chem 70: 147-157, 1998
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
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