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  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3650-3653 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PbTe/SnTe superlattices were grown on (111) BaF2 substrates by molecular beam epitaxy using PbTe as buffer layers. The individual layer thickness and number of repetitions were chosen in order to change the strain profile in the superlattices from completely pseudomorphic to partially relaxed. The superlattices structural properties were investigated by making reciprocal space maps around the asymmetric (224) Bragg diffraction points and ω/2aitch-theta scans for the (222) diffraction with a high resolution diffractometer in the triple axis configuration. With the strain information obtained from the maps, the (222) ω/2aitch-theta scan was simulated by dynamical diffraction theory. The simulated spectra of the pseudomorphic superlattices, in which the in-plane lattice constant is assumed to be the same as the PbTe buffer throughout the superlattice, fitted in a remarkably good agreement with the measured data, indicating that almost structurally perfect samples were obtained. For the thicker superlattices, the (224) reciprocal space maps revealed a complex strain profile. Our results show the importance of detailed structural characterization on the interpretation of the electrical properties. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2822-2824 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy of PbTe on BaF2 (111) is studied using UHV–scanning tunneling microscopy and atomic force microscopy. It is shown that PbTe growth is totally dominated by growth spirals formed around threading dislocations (TD) that originate from the growth on the 4.2% lattice-mismatched substrate. Due to dislocation annihilation, the TD density rapidly decreases with layer thickness, which results in a dramatic increase of the electron mobilities in the layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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