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Direct writing of nanostructures from silane on silicon (111) (1995)

Wong, T. M. H. ; O'Shea, S. J. ; McKinnon, A. W. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 786-788

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Silicon based structures were fabricated using scanning tunneling microscope on a Si(111) surface by the localized decomposition of gaseous silane at pressures of 10−5–10−6 Torr. Continuous wires of width 5 nm could be produced while atomically resolved images of the nearby substrate were obtained. We argue that the fabrication process is effected by field-assisted decomposition of silane on the tip surface, which subsequently migrates to the tunneling region at the tip apex where it field desorbs to the silicon surface. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.115467

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