Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
82 (1997), S. 5144-5147
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The SiO2 layers thermally grown on Si wafers were implanted by 130 keV Si ions at liquid nitrogen temperature to a dose of 1×1017 ions/cm2. From the as-implanted samples, a visible photoluminescence band centered around 2.0 eV was observed. After postannealing at 1100 °C for 90 min another visible band in the range of 1.7 eV was detected. Interestingly, with increasing thermal annealing time, a blue shift in peak energy and an intensity variation of the 1.7 eV band were observed. A possible interpretation for the observations was discussed in terms of a so-called three-region model. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.366317
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