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  • 1995-1999  (12)
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  • 1
    Electronic Resource
    Electronic Resource
    Comparative studies of SIMS and SNMS analyses during the build up of sputter equilibrium under oxygen and rare gas ion bombardment (1997)
    Springer
    Fresenius' journal of analytical chemistry 358 (1997), S. 47-50 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Sputtering of solid surfaces by using a focused ion beam is the basis for secondary ion mass spectrometry (SIMS) and sputtered neutral mass spectrometry (SNMS). The ion bombardment initiates not only redistribution of sample atoms but also massive changes in the surface and near surface composition of the bombarded area due to the sputter process and implantation of the primary ions. Changes in the matrix-composition affects the secondary ion yields and therefore a steady state (sputter equilibrium) has to be reached before SIMS data can give quantifiable results. SNMS is much less affected by those yield effects and therefore a combination of SIMS and SNMS can establish a basis for interpretation of SIMS data before the steady state is reached. In order to determine the effects of primary ion incorporation, we applied different primary ion species successively to generate different equilibria. An oxygen ion beam oxidizes the sample surface and by using a rare gas primary ion (PI) this oxide can be removed and analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160050342
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    TEM and SNMS studies on the oxidation behaviour of NiCrAlY-based coatings (1997)
    Springer
    Fresenius' journal of analytical chemistry 358 (1997), S. 122-126 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The effect of minor Ti additions content (0% Ti, 0.4% Ti, 1% Ti, 2% Ti) on the oxidation behaviour of Ni-20Cr-10Al-0.4Y (in weight-%) model alloys was investigated in the temperature range 950° C to 1100° C up to 200 h in Ar – 20% O2. Alloy microstructure, oxide scale morphology and microstructure of the scale were characterized by SEM/EDX and TEM. The growth mechanisms of the alumina scales formed on the model alloys were studied by two-stage oxidation experiments with 18O2-tracer and subsequent SNMS-analyses. The microstructural observations were correlated with the oxide scale properties in respect to growth rates and spalling resistance, which was tested during cyclic oxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160050361
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Depth profile analysis of thin film solar cells using SNMS and SIMS (1997)
    Springer
    Fresenius' journal of analytical chemistry 358 (1997), S. 207-210 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract SNMS (sputtered neutrals mass spectrometry) and SIMS (secondary ion mass spectrometry) are used for the depth profile analysis of thin film solar cells based on amorphous silicon. In order to enhance depth resolution, model systems are analyzed only representing parts of the layered system. Results concerning the TCO (transparent conducting oxide)/p interface and the n/i interface are presented. To minimize matrix effects, SNMS is used when the sample consists of layers with different matrices. Examples are the TCO/p interface (where the transition lengths of the depth profiles are found to be sharper when ZnO is used as TCO compared to SnO2) and SnO2/ZnO interfaces in coated TCO layers (where a Sn contamination inside the ZnO layer is found depending on the plasma pressure during the ZnO deposition). SIMS is used when the limits of detection reached by SNMS are not sufficient. Examples are H depth profiles in ZnO layers or P depth profiles near the n/i-interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160050385
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    The influence of an epitaxial CoSi2 layer on diffusion of B and Sb in underlying Si during oxidation (1999)
    Springer
    Fresenius' journal of analytical chemistry 365 (1999), S. 282-285 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The effect of an epitaxial 20 nm thick CoSi2 layer on the diffusion of B and Sb in Si is investigated during oxidation and is compared to thermal diffusion in Si. B and Sb doping superlattices (DSLs) were grown by molecular beam epitaxy (MBE). They consisted of six spikes with peak concentrations of about 1018 cm–3 (B) and about 1019 cm–3 (Sb) and peak centres spaced 100 nm apart. The shallowest spike was capped with 100 nm of Si followed by 20 nm of CoSi2 grown by molecular beam allotaxy (MBA). Oxidation in dry O2 and annealing in pure N2 were performed at temperatures of 800 °C to 1200 °C. Concentration depth profiles were measured by secondary ion mass spectrometry (SIMS). The results showed that the diffusion of B and Sb in Si was markedly different for specimens with or without a CoSi2 layer. Oxidation enhanced diffusion (OED) of B and oxidation retarded diffusion (ORD) of Sb was observed for specimens without a CoSi2 layer. The effect of CoSi2 layer was a strong retardation of B diffusion and an enhancement of Sb diffusion. The B diffusivity was retarded by a factor of 2–10 as compared to the thermal diffusivity and by a factor of 20–100 as compared to the corresponding diffusivity for oxidation of Si without a CoSi2 layer. Sb diffusivity was enhanced by a factor of 2 with respect to thermal diffusivity and by about a factor of 5 as compared to the case without a CoSi2 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160051489
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Comparative studies of MCs+-SIMS and e–-beam SNMS for quantitative analysis of bulk materials and layered structures (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 372-377 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract For the quantification of heterostructure depth profiles the knowledge of relative sensitivity factors (RSF) and the influence of matrix effects on the measured profiles is necessary. Matrix dependencies of the measured ion intensities have been investigated for sputtered neutral mass spectrometry (SNMS) and MCs+-SIMS. The use of Cs as primary ions for SNMS is advantageous compared to Ar because the depth resolution is improved without changing RSFs determined under Ar bombardment. No significant amount of molecules has been found in the SNMS spectra under Cs bombardment. Using MCs+-SIMS the RSFs are matrix dependent. An improvement of depth resolution can be achieved by biasing the sample against the primary ion beam for SNMS due to a reduction of the net energy of the primary ions and a resulting more gracing impact angle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s0021653530372
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    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Quantitative determination of element distributions in silicon based thin film solar cells using SNMS (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 478-482 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The determination of elemental distributions in thin film solar cells based on amorphous silicon using electron beam SNMS is possible by quantifying the measured ion intensities. The relative sensitivity factors (RSFs) for all elements measured have to be known. The RSFs have been determined experimentally using implantation and bulk standards with known concentrations of the interesting elements. The measured RSFs have been compared with calculated RSFs. The model used for the calculation of the RSFs takes into account the probability for electron impact ionization and the dwell time of the neutrals inside the postionization region. The comparison between measured and calculated RSF shows, that this model is capable to explain the RSFs for most elements. Differences between calculated and measured values can be explained by the formation of hydride and fluoride molecules (in case of H and F) and influences of the angular distribution of the sputtered neutrals in case of Al. The experimentally determined RSFs have been used for a quantification of depth profiles of the i-, buffer-, p- and front contact layers of a-Si solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s0021653530478
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Trace and surface analysis of ceramic layers of solid oxide fuel cells by mass spectrometry (1996)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 355 (1996), S. 626-632 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract For the trace analysis of impurities in thick ceramic layers of a solid oxide fuel cell (SOFC) sensitive solid-state mass spectrometric methods, such as laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) and radiofrequency glow discharge mass spectrometry (rf-GDMS) have been developed and used. In order to quantify the analytical results of LA-ICP-MS, the relative sensitivity coefficients of elements in a La0.6Sr0.35MnO3 matrix have been determined using synthetic standards. Secondary ion mass spectrometry (SIMS) – as a surface analytical method – has been used to characterize the element distribution and diffusion profiles of matrix elements on the interface of a perovskite/Y-stabilized ZrO2 layer. The application of different mass spectrometric methods for process control in the preparation of ceramic layers for the SOFC is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s0021663550626
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    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Comparative studies of MCs+-SIMS and e−-beam SNMS for quantitative analysis of bulk materials and layered structures (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 372-377 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract For the quantification of heterostructure depth profiles the knowledge of relative sensitivity factors (RSF) and the influence of matrix effects on the measured profiles is necessary. Matrix dependencies of the measured ion intensities have been investigated for sputtered neutral mass spectrometry (SNMS) and MCs+-SIMS. The use of Cs as primary ions for SNMS is advantageous compared to Ar because the depth resolution is improved without changing RSFs determined under Ar bombardment. No significant amount of molecules has been found in the SNMS spectra under Cs bombardment. Using MCs+-SIMS the RSFs are matrix dependent. An improvement of depth resolution can be achieved by biasing the sample against the primary ion beam for SNMS due to a reduction of the net energy of the primary ions and a resulting more gracing impact angle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00322072
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    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    TEM and SNMS studies of protective alumina scales on NiCrAlY-alloys (1996)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 355 (1996), S. 703-706 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The effect of Si addition on the oxidation behaviour of NiCrAlY alloys in the temperature range 950 bis 1100° C has been investigated. During isothermal oxidation oxide growth rates were practically independent of the Si-content. However during cyclic oxidation Si additions were beneficial. Si additions of 1–2m/0 appeared to shift the onset for spallation to longer times. It was found that Si stabilizes the β-phase and probably it suppresses the formation of metastable Al2O3 modifications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s0021663550703
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Quantitative determination of element distributions in silicon based thin film solar cells using SNMS (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 478-482 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The determination of elemental distributions in thin film solar cells based on amorphous silicon using electron beam SNMS is possible by quantifying the measured ion intensities. The relative sensitivity factors (RSFs) for all elements measured have to be known. The RSFs have been determined experimentally using implantation and bulk standards with known concentrations of the interesting elements. The measured RSFs have been compared with calculated RSFs. The model used for the calculation of the RSFs takes into account the probability for electron impact ionization and the dwell time of the neutrals inside the postionization region. The comparison between measured and calculated RSFs shows, that this model is capable to explain the RSFs for most elements. Differences between calculated and measured values can be explained by the formation of hydride and fluoride molecules (in case of H and F) and influences of the angular distribution of the sputtered neutrals in case of Al. The experimentally determined RSFs have been used for a quantification of depth profiles of the i-, buffer-, p- and front contact layers of a-Si solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00322092
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    Paper (German National Licenses)
    Fulltext
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