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  • 1
    Electronic Resource
    Electronic Resource
    Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3354-3356 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the temperature dependence (10–180 K) of the photoluminescence (PL) emission spectrum of self-organized InAs/GaAs quantum dots grown under different conditions. The temperature dependence of the PL intensity is determined by two thermally activated processes: (i) quenching due to the escape of carriers from the quantum dots and (ii) carrier transfer between dots via wetting layer states. The existence of different dot families is confirmed by the deconvolution of the spectra in gaussian components with full width half maxima of 20–30 meV. The transfer of excitation is responsible for the sigmoidal temperature dependence of the peak energies of undeconvoluted PL bands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117304
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3140-3142 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots have been grown by molecular beam epitaxy in such a way as to obtain a continuous variation of InAs coverages across the wafer. Structured photoluminescence spectra are observed after excitation of a large number of dots; deconvolution into Gaussian components yields narrow emission bands (full width at half-maximum 20–30 meV) separated in energy by an average spacing of 30–40 meV. We ascribe the individual bands of the photoluminescence spectra after low excitation to families of dots with similar shapes and with heights differing by one monolayer, as strongly supported by numerical calculations of the fundamental electronic transitions in quantum dot structures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119114
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Carrier recombination dynamics in self-ordered InAs quantum dots (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1371-1375 
    Details
    ISSN: 0392-6737
    Keywords: III–V semiconductors ; III–V compounds and systems ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A photoluminescence study of self-ordered InAs quantum dots grown by molecular beam epitaxy on a GaAs substrate is reported. Short pulses and high excitations have been used in order to observe emission from higher states of the quantum dots. The energy spacing between adjacent transitions seems to be of the order of 40–50 meV for dot diameters around 20 nm. The photoluminescence decay time from the ground state is of the order of 650–700 ps and decreases down to roughly 100 ps for the highest confined states. A cascade-like mechanism for the carrier relaxation in these structures is strongly suggested by the time-resolved data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457212
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    Paper (German National Licenses)
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