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  • 1
    Electronic Resource
    Electronic Resource
    USA/Oxford, UK : Blackwell Science Ltd
    Cephalalgia 16 (1996), S. 0 
    ISSN: 1468-2982
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: MK-462 is a potent, selective 5HT1D receptor agonist which may be useful in treating acute migraine. We conducted a double-blind placebo-controlled inpatient study to assess the preliminary efficacy and safety of oral doses of MK-462 20 mg (n = 8) and 40 mg (n =36) vs placebo (n =21), administered to 65 male and post-menopausal female migraine patients aged 22–51 with moderate or severe migraine headache. Headache severity and functional disability were measured at 0.5, 1, 1.5, and 2 h post-dose. The 20 mg dose was well tolerated and 4/8 patients obtained relief in headache severity at the 2 h time point. The 40 mg dose was well tolerated and was significantly (p 〈0.05) superior to placebo at the 1.5 and 2 h time points (with 27/36 or 75% obtaining relief at 2 h compared to 7/21 or 33% for placebo). Adverse events occurred in 50% of patients on 20 mg MK-462, 72% of those on 40 mg MK-462, and in 52% of placebo-treated subjects. The most common adverse events associated with MK-462 were drowsiness (20 mg 12%; 40 mg 44%; placebo 24%), dry mouth (10 mg 36%; placebo 19%), and lightheadedness/dizziness (40 mg 17%; placebo 10%). Based on these preliminary results, MK-462 appears worthy of continued study for the treatment of acute migraine.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2378-2382 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality GaN epitaxial layers were grown on 6H–SiC substrates by using low-pressure metalorganic chemical vapor deposition method. Samples employing a three-period GaN/Al0.08Ga0.92N (100 Å/100 Å) as a buffer layer produce a good quality GaN epitaxial layer, with mobility and carrier concentration of 612 cm2/V⋅s and 1.3×1017 cm−3 (at 300 K), respectively. The enhanced electron mobility in the Al0.08Ga0.92N/GaN heterostructures is also observed. By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility at 4.2 K for the Al0.08Ga0.92N/GaN heterostructure are 5.8×1012 cm−2 and 5300 cm2/V⋅s, respectively. Strong SdH (Shubnikov–de Haas) oscillations were observed to confirm the two-dimensional electron gas (2DEG) phenomenon at the AlGaN/GaN top heterointerface. In addition, an extra SdH oscillation also resulted from the high-quality 2DEG channel of the GaN/AlGaN bottom heterointerface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2583-2585 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report the observation of the enhanced electron mobility in three different Al0.08Ga0.92N/GaN heterostructures. These structures were deposited on (0001) 6H-SiC substrates by using the low-pressure metalorganic chemical vapor deposition method. The structure was composed of 500 Å AlGaN compositional stair-step layer deposited onto 1.3 μm GaN epitaxial layer. There is a 100 Å GaN Cap layer on top of the AlGaN layer to prevent the oxidation of the AlGaN layer. By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility for Al0.08Ga0.92N/GaN heterostructure are 6.6×1012 cm-2 and 5413 cm2/Vs at 77 K, respectively. This high value of mobility is, to the best of our knowledge, the first observed two-dimensional electron gas (2DEG) at the AlGaN/GaN stair-step type of heterostructure. Other interface structures such as graded composition and bulk composition structures were also prepared and 2DEG properties were observed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3282-3284 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rope-like bundles of single-walled carbon nanotubes (SWNTs) similar to those obtained by laser vaporization and electric-arc techniques were synthesized on a relatively large scale and at low cost by the catalytic decomposition of hydrocarbons at a temperature of about 1200 °C using an improved floating catalyst method. The SWNTs thus obtained have larger diameters and are self-organized into ropes. The addition of thiophene was found to be effective in promoting the growth of SWNTs and in increasing the yield of either SWNTs or multiwalled carbon nanotubes under different growth conditions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1666-1668 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of diamondlike carbon (DLC) films coated by pulsed laser deposition technique on the electron emission characteristics of Mo tips is examined. Turn-on voltage (V0) was lowered from 40 V for Mo tips to 22 V for DLC coated Mo tips and maximum anode current (IA) was increased from ∼44 μA for Mo tips to ∼2.0 mA for DLC coated Mo tips. Maximum anode current (IA) for the DLC coated Mo tips, however, decreased during operation. Raman spectroscopy and selected area diffraction (SAD) in transmission electron microscopy (TEM) revealed that the degradation of electron emission behavior can be ascribed to the conversion of sp3-bonds, characteristic for diamond, to sp2-bonds, characteristics for graphite. The transformation of the structure is assumed to be induced by the local heat from the DLC coatings. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 358-360 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence imaging was used to study photodegradation in CdZnSe quantum wells, important to II-VI based blue-green light emitter technology. The observed degradation microstructure evolves similarly to features observed during CdZnSe based LED and laser operation. Degradation is shown to emanate from pre-existing defects to form dark line defects along the 〈100〉 directions. We report an observation of a mobile defect in II-VI materials that is the precursor to the 〈100〉 dark line defects.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3462-3464 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report molecular beam epitaxial study of wide band gap ((approximately-greater-than)2.9 eV at room temperature) MgZnSSe on (001) oriented GaAs using ZnS, Mg, Zn, and Se sources. Although the growth is under group II rich condition, the compositions of S and Mg in the MgyZn1−ySxSe1−x are linear functions of flux ratios, PZnS/PSe and PMg/PZnS, up to 35%, respectively. Mirrorlike surface and low defect density (5×104 cm−2) MgZnSSe with band gap close to 3.1 eV can be achieved. Composition modulation, tweedlike contrasts and strain contrasts in the MgZnSSe are observed from transmission electron microscope analysis. For the first time, a miscibility gap at high S and Mg compositions is reported. Nitrogen-free radicals are used as the p-type dopant for the doping study. For the MgZnSSe with room-temperature band gap energy higher than 2.9 eV, the net acceptor concentration decreases as the band gap energy increases. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic dependence of the density and type of stacking fault defects with substrate surface chemistry and film growth mode was observed in ZnSe-based films grown on GaAs substrates. Namely, the density of Frank-type stacking faults is very large for films grown on Ga-rich surfaces, but is very low for films grown on As-stabilized surfaces exposed to Zn prior to the growth of the film. In contrast, the density of Shockley-type stacking faults increases for films grown by 3D growth mode at the initial stages of growth, but decreases greatly if the films are grown by the layer-by-layer growth mode. Films with stacking fault densities as low as 104/cm2 were obtained by growing the films by the layer-by-layer growth on GaAs epilayers with As-stabilized surfaces that were exposed to Zn for 1–2 min prior to the growth of the films. © 1995 American Institute of Physics. [S0003-6951(95)00548-6]
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Biophysics and Biomolecular Structure 24 (1995), S. 209-237 
    ISSN: 1056-8700
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology , Physics
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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