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  • 1995-1999  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Determination of diffusion coefficients in degenerate electron gas using Monte Carlo simulation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1220-1226 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a method for determining diffusion coefficients in degenerate semiconductors from an ensemble Monte Carlo simulation. The basic idea is that what is relevant for this problem is not the whole electron distribution function, but its perturbation in response to an addition of "excess carriers." Starting from the Boltzmann transport equation, we derive the equation of evolution for this "excess electron distribution function." We propose an interpretation in terms of scattering events suffered by particles, allowing one to solve the problem by Monte Carlo simulation. We simulate two sets of carriers, coupled by an "exchange scattering" mechanism which is properly defined. The first set represents the uniform background density in the semiconductor, whereas the second one represents the excess carriers. Only the latter is used for calculating diffusion coefficients. This method is applied to a highly degenerate two-dimensional electron gas in a doped GaAs quantum well. The diffusivity-field characteristics are calculated and discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365892
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Monte Carlo simulation of high-field electron transport in GaAs using an analytical band-structure model (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3160-3169 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of high energy electron transport in GaAs using an analytical model of the band structure. This model is based on piecewise polynomial approximation of the dispersion relation in different regions of the Brillouin zone. It accounts for the first two conduction bands and reproduces all important features of the full band structure. We have used this model to set up a Monte Carlo simulation of electron transport accounting for impact ionization. It has been shown that this "extended valley" model yields essentially the same results as the most rigorous full band Monte Carlo calculations. We have found a large influence of high energy anisotropy on electron transport. Another important result is that most impact ionization events are due to electrons in the second conduction band. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364351
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Raman characterization of an operating InAlAs - InGaAs - InP high electronic mobility transistor (1995)
    Chichester [u.a.] : Wiley-Blackwell
    Journal of Raman Spectroscopy 26 (1995), S. 167-172 
    Details
    ISSN: 0377-0486
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: Raman scattering was used to probe electronic properties in In-based structures. First, Raman signatures of undoped and doped InAlAs and InGaAs bulk materials and Raman spectra of InAlAs - InGaAs heterostructures were recorded. Raman scattering by coupled longitudinal optic phonons and two-dimensional electron gas provides a powerful probe of electronic properties in this structure. More precisely, Raman results allowed information to be obtained on the two-dimensional gas electron carrier concentration. Then, a specific advantage of the micro-Raman method was demonstrated by the observation of the carrier concentration the vicinity of the gate of an operating high electronic mobility transistor (HEMT). Qualitative variations of carrier concentration in the two-dimensional electron gas were observed and compared successfully with carrier concentration calculations using Monte Carlo simulations.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jrs.1250260209
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    Paper (German National Licenses)
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