Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 2255-2257
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Low energy electron-enhanced etching of GaAs(100) has been achieved by placing the sample on the anode of a low-pressure hydrogen/chlorine dc discharge. Samples etched at room temperature reveal good anisotropy ((approximately-greater-than)20), good selectivity ((approximately-greater-than)200 against SiO2 masks at room temperature), and smooth surfaces at etch rates of 250 A(ring)/min; etch rates up to 4.5 μm/min were achieved at 150 °C. The dependence of the etch characteristics on gas composition, pressure, and temperature is described. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115876
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |