Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
82 (1997), S. 1196-1200
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Using ion-channeling methods, the thermal stability of crystallinity for heavily Ga-doped ZnSe epitaxial layers grown on GaAs (100) substrates was investigated. Some distinctive features were found: The crystallinity of as-grown heavily Ga-doped ZnSe is similar to that of undoped ZnSe. After thermal annealing at 450 °C, the crystallinity of Ga-doped ZnSe is degraded, although that of undoped ZnSe is not significantly changed. It is expected that doped Ga atoms are displaced from the regular lattice sites after annealing. The degree of this degradation depends on the crystallinity of the as-grown Ga-doped ZnSe itself. These results indicate the degradation of the crystallinity for Ga-doped ZnSe epilayers is mainly caused by the interaction between the doped Ga atoms and grown-in point defects in the epitaxial layers. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.365888
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