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  • 1995-1999  (21)
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  • 1
    Electronic Resource
    Electronic Resource
    ArF excimer laser irradiation effects in AlF3-based fluoride glasses for vacuum ultraviolet optics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3038-3043 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Color center formation in AlF3–YF3–RF2 (R=alkaline earth metal) glasses doped with PO2.5 (0–3 mol %) by irradiation with ArF excimer laser light was examined by optical absorption (vacuum ultraviolet–visible) and electron paramagnetic resonance (EPR) spectroscopies. Concentrations of impurity iron in all the glasses and oxygen in the P-free samples were ∼0.2 and ∼450 ppm, respectively. Optical absorption ranging from 2–8 eV was induced via one-photon absorption processes. The optical band dominating the transmission loss at 193 nm has a peak at 5 eV in the P-free glasses or a peak at 6.9 eV in the P-doped glasses. The origins of the 5 and 6.9 eV bands were tentatively ascribed to an oxygen-related hole center giving an EPR signal with a width of 7.2 mT at g=2.0097 and P E′ center giving a hyperfine doublet with a separation of ∼70 mT. Provided these correspondences, then the values of oscillator strength for the 5 and 6.9 eV bands were calculated as ∼0.15 and ∼0.1, respectively. No formation of color centers associated with intrinsic constituents such as Al, Y, R, and F ions, was observed. The present results suggest that the reduction of impurity oxygen content is a route to effectively suppress the solarization in the P-free AlF3-based glasses. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369640
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  • 2
    Electronic Resource
    Electronic Resource
    Long lasting phosphorescence and photostimulated luminescence in Tb-ion-activated reduced calcium aluminate glasses (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3729-3733 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long lasting phosphorescence (LLP) and photostimulated luminescence (PSL) were found in reduced calcium aluminate glasses activated with Tb3+ ions. The LLP from Tb3+ was observed by illuminating the Tb3+ 4f→5d charge transfer band with ultraviolet (UV) 254 nm light, while the PSL was seen by stimulating the UV-illuminated glasses with 633 nm light. The decay curve of the LLP was fitted with a second-order kinetic for the initial period (0〈t〈20 min) and a first-order kinetic for the later (t〉30 min). An electron paramagnetic resonance (EPR) signal, which is attributed to an F+-like center associated with Ca2+ ions, was induced by illumination with UV light and its intensity decay was fitted with a first-order kinetic similarly to the later stage of the LLP. The appearance of the PSL by illumination is accompanied by a distinct intensity reduction of the EPR signal due to the F+-like center. The thermoluminescence spectra of the specimen illuminated with UV light at 77 K consist of two components peaking at ∼240 and ∼390 K. The low temperature component and the high temperature component were attributed to an F-like center and an F+-like center, respectively. These results lead to a conclusion that electrons of the F-like center and the F+-like center contribute predominantly to the emergence of the LLP and the PSL, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371243
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  • 3
    Electronic Resource
    Electronic Resource
    Origin of the Red Color of Satsuma Copper-Ruby Glass as Determined by EXAFS and Optical Absorption Spectroscopy (1999)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The origin of the ruby color of Satsuma glass, a famous copper-ruby glass produced in Japan in the mid-19th century, has been examined by electron microprobe analysis (EPMA), X-ray absorption fine structure (XAFS), and optical absorption spectroscopy analyses. CuK XAFS analysis reveals that the major component of copper in the ruby glass consists of Cu(I) ions in the glass structure. This species is distinct from Cu2O (cuprite), which we conclude is not responsible for the ruby color. Optical absorption spectra measured at 300 and 77 K clearly distinguishes the absorptions due to the colloidal particles of metallic copper and Cu2O. It is concluded that the trace amount of copper in the ruby glass, which is below the detection limit of the EPMA and XAFS techniques, exists as metallic copper particles of nanometer size and is responsible for the ruby-red appearance of the Satsuma glass.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1999.tb01818.x
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  • 4
    Electronic Resource
    Electronic Resource
    Fast proton conducting glasses: Creation by proton implantation and a requirement for fast proton conduction (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1296-1301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fast proton conducting glasses have been obtained in Mg(PO3)2 glasses by implantation of protons at 120 keV to a fluence of 1×1018 cm−2. The dc conductivity and the activation energy of the conduction in the implanted glasses are 5×10−4 s cm−1 at room temperature and 0.18 eV, respectively. No fast proton conduction was observed for H+-implanted SiO2 and Ca(PO3)2 glasses. Infrared absorption spectra revealed that implanted protons are present in the form of X–OH (X=Si or P) in SiO2 and Ca(PO3)2 glasses implanted with H+ ions to 1×1018 cm−2, but exist as POH groups and molecular water H2O in Mg(PO3)2 glasses. A quantitative discussion on the proton conductivity led to the conclusion that the coexistence of acidic groups such as POH and molecular water H2O is a structural requirement for the emergence of fast proton conduction in oxide glasses. The formation of H2O in Mg(PO3)2 was understood by considering its thermodynamic stability over SiO2 and Ca(PO3)2 glasses. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363908
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  • 5
    Electronic Resource
    Electronic Resource
    Proton-implantation-induced nanosized Ge crystal formation in SiO2:GeO2 glasses (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1357-1363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-sized crystalline Ge colloid particles in 9SiO2–1GeO2 glasses were formed by implantation of protons at 1.5 MeV without post-thermal annealing. Although oxygen-deficient type point defects associated with Ge ions were primarily formed to fluences (approximately-less-than)1×1017 cm−2, the formation of Ge fine crystalline particles was observed for fluences (approximately-greater-than)5×1017 cm−2. No formation of Ge colloids and the Ge-related point defects were noted for implantation of 1.5 MeV He+ to a fluence of 1×1018 cm−2. The depth of Ge colloid formation layers was 22–26 μm from the implanted surface. This depth region agreed well with the peak region of electronic energy deposition. Ge–OH groups were formed preferentially over Si–OH groups upon implantation of protons and the decay curve upon isochronal annealing was close to that of the optical absorption at ∼3 eV, which was attributed to nanometer-sized Ge. A red photoluminescence peaking at ∼1.9 eV was observed for all the implanted substrates. A tentative formation mechanism of Ge colloids in these glasses was proposed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362935
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  • 6
    Electronic Resource
    Electronic Resource
    Nanometer-scale heterogeneity in SiO2–GeO2 glass preforms and fibers prepared by vapor phase axial deposition method (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3115-3117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-scale heterogeneity of Ge ions in SiO2:GeO2 (10–15 mol %) glass preforms prepared by vapor phase axial deposition method and in optical fibers drawn from the preform was found by transmission electron microscopic observation. Both preforms and fibers were comprised of 8–10 nm sized Ge-rich and Si-rich phases. Observation of Ge E′ centers in the as-prepared state and the formation of Ge E′ centers with light illumination with 5 eV-light may be understood by the occurrence of these heterogeneity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363122
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of fluorine dimer excimer laser radiation on the optical transmission and defect formation of various types of synthetic SiO2 glasses (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2755-2757 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Changes in the optical absorption and the formation of point defects in three types of synthetic SiO2 glasses, wet (OH content; 120 ppm), dry (OH content 〈1 ppm), and fluorine (F)-doped (∼1 mol %) SiO2 glasses, by irradiation with fluorine dimer (F2) excimer laser light pulses (∼8 mJ/cm2/pulse×3.6×105 pulses) were examined by various spectroscopic methods. Intense optical absorptions were induced in the wet and dry silicas in the range of 4–8 eV, whereas the intensity of absorptions induced in the F-doped silica was smaller by an order of magnitude than that in the F-free glasses. The optical transmission at the wavelength of 157 nm after the irradiation was F-doped silica(very-much-greater-than)wet silica〉dry silica. The dominant electron spin resonance-active defect in the irradiated specimens was the nonbridging oxygen-hole center (NBOHC) for the wet silica, or the E′ center in the dry silica. The concentration of NBOHCs or E′ centers in the F-doped silica was lower by an order of magnitude than that in the wet or dry silica. The present results suggest the possibility of using F-doped silica glasses as photomask materials for F2 laser lithography. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124004
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  • 8
    Electronic Resource
    Electronic Resource
    n-type electrical conduction in transparent thin films of delafossite-type AgInO2 (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1036-1038 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of AgInO2 were prepared to find a transparent and n-type conducting oxide with a delafossite structure. This is a candidate material for fabricating a pn junction with the recently found p type conducting and transparent CuAlO2 delafossite. Nondoped and 5% Sn-doped thin films were deposited on a silica glass substrate by radio-frequency sputtering. The crystalline phase in the films was identified to be the delafossite structure by x-ray diffraction and chemical composition was confirmed to be an Ag/In ratio=1.00/0.97 by inductively coupled plasma emission spectroscopy. The optical band gap was estimated from absorption spectra to be ∼4.4 eV, and the thin films were transparent up to near ultraviolet region. Electrical conductivities of the nondoped and 5% Sn-doped AgInO2 films at room temperature were 1×10−5 and 6×100 S cm−1, respectively. Measurements of Hall voltage and Seebeck coefficient (−50 μV K−1) suggested the conduction in the Sn-doped film to be n type. Carrier concentration and Hall mobility in the doped film were 2.7×1019 cm−3 and 0.47 cm2 V−1 s−1, respectively. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120957
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  • 9
    Electronic Resource
    Electronic Resource
    Large electrical conductivity enhancement of WO3 thin films produced by ion implantation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5610-5613 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation induced dc electrical conductivity changes in polycrystalline WO3 thin films was examined. Helium, argon, and tungsten ions were implanted under the following conditions: helium at 90 keV, argon at 360 keV, and tungsten at 300 keV. The fluence range studied was from 1×1017 to 3×1017 cm−2 for helium and argon, and from 5×1014 to 5×1015 cm−2 for tungsten. The 300 K conductivities after implantation at a 1×1017 cm−2 fluence increased from ∼10−5 to ∼10−1 S cm−1 for helium implantation and to ∼102 S cm−1 for argon implantation. Also, implantation induced a broad optical absorption feature at ∼1000 nm and a negative thermopower coefficient indicating n-type conduction. The implanted samples exhibited low conductivity activation energies, which were consistent with degenerate conduction. Tungsten implantation induced conductivities were higher than those resulting from either helium or argon implantation as a conductivity of ∼102 S cm−1 was obtained at a 5×1015 cm−2 fluence. These conductivity changes are correlated to the displacements per atom resulting from the various ion implantations. Several mechanisms are responsible for the observed donor species increase: (1) in the proton case the implanted species becomes a donor, (2) in the helium and argon cases a charged oxygen vacancy may be formed by the nuclear collisions that occur during implantation, and (3) in the tungsten case the subsequent oxidation of the implanted tungsten results in the formation of a donor species. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368608
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  • 10
    Electronic Resource
    Electronic Resource
    Nanometer-sized Ge particles in GeO2–SiO2 glasses produced by proton implantation: Combined effects of electronic excitation and chemical reaction (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4232-4235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It was reported [H. Hosono et al., Appl. Phys. Lett. 65, 1632 (1994)] that nanometer-sized crystalline (nc) Ge colloid particles were formed by implantation of protons into 0.1 GeO2–0.9 SiO2 glasses at room temperature. The depth profiles of Ge colloids and the density of Si–OH or Ge–OH created by the implantation were measured and compared with those of energy deposition in order to examine the formation mechanism of Ge colloids by proton implantation. The depth region of nc-Ge particles was found to correspond to the overlapped region between the OH distribution and the peak of electronic energy deposition. Transmission electron microscopic observation revealed that the size of Ge colloid particles created by proton implantation was close to that of GeO2-rich particles occurring in the substrate glasses. These results indicate that GeO2-rich particles are converted into Ge particles by a combined effect of the electronic excitation and the chemical reaction of implanted protons. A mechanism was proposed consisting of displacement of bridging oxygen into interstitials by electronic excitation and subsequent trapping of the oxygen interstitials by a formation of OH groups. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366228
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