ISSN:
1551-2916
Source:
Blackwell Publishing Journal Backfiles 1879-2005
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Microstructural development of silicon nitride doped with Y2O3 and HfO2 was investigated to determine how extra-large grains develop during gas pressure sintering. Grains as long as 200 µm and a few tens of micrometers wide developed at high temperatures (〉2173 K) in a fine-grained matrix containing a limited amount of liquid which had a poor propensity to spread. A small number of grains could grow quite large before their growth was halted by neighboring grains of comparable size.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1111/j.1151-2916.1998.tb02560.x
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