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  • 1
    Electronic Resource
    Electronic Resource
    Electrochemical cell for the preparation of porous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3627-3630 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design of a practical electrochemical cell to fabricate porous silicon layers (PSLs) is described. This cell is useful to rapidly produce PSLs without the need to prepare new electrochemical solutions. The cell is also adapted for the formation of PSLs in the dark or under illumination, with nitrogen flow in the solution. The special design of the silicon wafer support guarantees a homogeneous electrical contact and no solution infiltration into it. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147126
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  • 2
    Electronic Resource
    Electronic Resource
    Silicidation process of Ti/TiNx/Si structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 781-785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One of the most promising metallization schemes on silicon is the TiN/TiSi2/Si structure, since it takes advantage from both the good electrical contact between Si and TiSi2 and the property as a diffusion barrier of TiN. A related system that shows some interesting features is the Ti/TiNx/Si system. The results of two Ti/TiNx/Si structures with different nitride compositions (TiN0.7 and TiN0.8) have been studied. These structures show good electrical characteristics after thermal treatments (〉900 °C) and allow one to obtain a smooth variation of the Schottky barrier height, which could lead to tunable contacts in the 0.57–0.53 eV range. Rutherford backscattering spectrometry and grazing incidence x-ray diffraction have been used to establish that the phase sequence observed during the silicidation process is very dependent on the diffusion rate of silicon through the TiNx layer. Finally, the slowest silicidation rate in the Ti/TiNx/Si system permits a higher incorporation of nitrogen from the atmosphere during the thermal treatment, as determined by nuclear reaction analysis. All these characteristics show that these structures can lead to the preparation of the TiN/TiSi2 C54/TiNx/Si in a single thermal treatment. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364140
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  • 3
    Electronic Resource
    Electronic Resource
    Plasma oxidation mechanisms in tungsten silicide thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 514-518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of tungsten disilicide in a rf oxygen plasma at floating potential in the 300–900 °C temperature range has been investigated. The oxidation kinetics and the elemental depth distribution in the films have been analyzed by the complementary use of Rutherford backscattering spectrometry and nuclear reaction analysis. It has been found that the nature of the oxide largely depends on temperature. A mixture of WO3 and SiO2 is grown in the 300–650 °C range. The W:Si ratio in these oxides decreases monotonically with temperature reaching a minimum value at 650 °C. As a matter of fact, a SiO2 surface layer is formed when oxidation is carried out in the 650–900 °C range. Oxygen diffusion through the growing oxide seems to be the dominant rate controlling process. Despite the fact that oxygen diffusion is a process activated by temperature, oxygen diffusion through the mixture of WO3 and SiO2 proceeds more rapidly than through SiO2. This leads to an enhancement of the growth rate at temperatures near 450 °C. Finally, a mechanism of plasma oxidation of tungsten silicide films has been proposed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360635
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  • 4
    Electronic Resource
    Electronic Resource
    Properties of porous silicon layers studied by voltammetric oxidation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3224-3228 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The existence of an outer cracked layer and an inner more structured porous layer has been observed in electrochemically obtained porous silicon when drying procedures are carried out. The changes in the charge transferred to the porous structure during voltammetric oxidation, the interference fringes obtained by Fourier-transform infrared spectroscopic measurements, and scanning electron microscopy micrographs confirm the existence of this double layer. Also, drying procedures and voltammetric oxidations drastically affect the intensity and wavelength of the peak maximum in the photoluminescence spectrum. The evolution of the luminescent properties is explained by the introduction of nonradiative recombination centers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361268
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  • 5
    Electronic Resource
    Electronic Resource
    Optical and structural characterization of r.f. sputtered CeO2 thin films (1997)
    Springer
    Journal of materials science 32 (1997), S. 1861-1865 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The optical and structural properties of r.f. sputtered CeO2 thin films deposited on Pyrex substrates have been studied as a function of substrate temperature during deposition. The refractive index, n, extinction coefficient, k, and bandgap of the films were calculated from reflectance, R, and transmittance, T, spectra in the wavelength range 340–900 nm. The refractive index of CeO2 films at 550 nm comprises values from about 2.25–2.4 depending on the substrate temperature during deposition. The extinction coefficient was negligible for wavelength values higher than 400 nm. The value obtained for the bandgap was 3.1 eV. The X-ray diffraction patterns showed the same (f c c) cubic structure with preferential orientation depending on substrate temperature during deposition. The scanning force microscope measurements showed that the roughness and grain size of the CeO2 films increase with increasing substrate temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018509007844
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  • 6
    Electronic Resource
    Electronic Resource
    SiOxNy Films deposited with SiCl4 by remote plasma enhanced CVD (1999)
    Springer
    Journal of materials science 34 (1999), S. 3007-3012 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Silicon oxynitride films have been deposited with SiCl4 by remote-plasma enhanced chemical vapor deposition (PECVD) at a substrate temperature of 250°C. Different mixtures of O2 and NH3 were used to obtain different oxynitride compositions ranging from SiO2 to an stoichiometry close to that of silicon nitride. Rutherford backscattering spectrometry was used to determine the chemical composition of the SiOxNy films. The behavior of the IR absorption spectra as well as the refractive index measured by ellipsometry were used to estimate the effect of the different deposition parameters. It was found that the IR spectra show a shift of the characteristic peak associated with the stretching vibration mode of the Si-O-Si bonds towards lower wavenumbers as the relative concentration of ammonia was increased with respect oxygen. No double peaks associated with silicon oxide and silicon nitride were observed, indicating the formation of an homogeneous alloy. The IR spectra did not show any presence of water or hydrogen related impurities in the film. Also the effect of a hydrogen flow added during the deposition process on the structural characteristics of the deposited films was studied using dielectric spectroscopy and atomic force microscopy measurements showing that the hydrogen flow added during deposition results in a reduction of the film roughness and a planarization effect, which is very interesting for the application of these films in microelectronics devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004620409994
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  • 7
    Electronic Resource
    Electronic Resource
    FTIRS study of porous silicon at different oxidation stages (1999)
    Springer
    Journal of materials science 34 (1999), S. 3067-3069 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electroluminiscence (EL) in liquid of porous silicon (PS) has been attributed to radiative recombination of electrochemically generated holes from the bulk of the semiconductor and electrons injected into the conduction band of PS by species adsorbed on the surface. An examination of the surface of PS submitted to oxidation by means of Fourier Transform Infrared Spectroscopy indicates that the concentration of Si-Hx bonds does not significantly vary during the time interval in which EL is recorded, and therefore that the electrons belonging to the Si-H bonds do not intervene in the generation of EL.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004688613686
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  • 8
    Electronic Resource
    Electronic Resource
    Cross-section TEM and Optical Characterization of Porous Silicon Multilayer Stacks (1998)
    Springer
    Journal of materials science 17 (1998), S. 845-847 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006654926348
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of Photoetching on Porous Silicon Morphology (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 677-682 
    Details
    ISSN: 0142-2421
    Keywords: silicon ; light irradiation ; surface tension ; transmission electron microscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The morphological differences between porous silicon formed in the dark or under illumination have been studied by means of gravimetric measurements, transmission electron microscopy, infrared spectroscopy and cyclic voltammetry. Photoetching has been found to give rise to a complex surface structure, due to the presence of narrower outer silicon fibres, which suffer a more severe cracking process upon drying. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of the interfaces formed during the silicidation process of Ti films on Si at low and high temperatures (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 896-903 
    Details
    ISSN: 0142-2421
    Keywords: titanium silicide ; Schottky barrier ; silicidation ; rapid thermal annealing ; interface ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The silicidation process of titanium on silicon shows three distinct ranges depending on the treatment temperature. From 700°C up to 900°C, a stable and reproducible TiSi2 C54/Si structure is formed for all treatment conditions. At lower temperatures the silicidation process is not complete, and several silicide phases appear during the thermal treatment. On the other hand, the silicidation at high temperatures (T〉900°C) provokes changes in the TiSi2/Si structures. We have centred our interest in these two extreme ranges of temperature. The degree of silicidation has been established by Rutherford backscattering and grazing-incidence x-ray diffraction. It has been observed that TiSi and TiSi2 C54 are the only silicide phases present in the film at low temperatures. The distribution of phases has been determined by transmission electron microscopy. The high-resolution electron microscopy images indicate that the silicide/silicon interface is very flat, but the interface between the different phases of the silicide is not well defined. High-resolution electron microscopy and I-V measurements have been used to characterize the interface formed between the silicide and the silicon at high temperatures. At 1050°C the interface is flat in a scale of nanometres but it is rough in a scale micrometres. This roughening is not high enough to explain the decreasing of the Schottky barrier height. © 1997 John Wiley & Sons, Ltd.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
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