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  • 1
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Pure, translucent, and highly crystallized barium titanate (BaTiO3) monolithic gels were synthesized via a sol-gel technique at temperatures down to 90°C by using a high-concentration solution of barium alkoxide and titanium alkoxide. The gels consisted of fine particles with an average diameter of ~10 nm and showed the X-ray diffraction patterns of a pseudo-cubic BaTiO3 system at room temperature; however, in bulk crystal, the tetragonal structure was more stable. The optical transmission spectra of the polycrystalline gels were similar to those for single-crystalline BaTiO3. From the excitation energy dependence of the absorption-edge structures, the optical-gap energies for the gels were estimated to have values that were ~0.1 eV higher than those for the single crystal; these higher optical-gap energies may be attributed to size effects.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Ceramic Society 80 (1997), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Thin, semiconducting barium titanate (BaTiO3) ceramic bars, with a diameter of 10 to 20 μm, consisting of single grains joined together in series have been prepared to investigate the piezoresistivity in the materials, which was evaluated from their current (I)-voltage (V) characteristics under the loading condition of various bending stresses. I-V characteristics of single grain boundaries in some of the materials were found to exhibit distinct differential negative resistance (DNR) at room temperature with its feature changing with stress. The DNR appeared on the I-V curves at an electric field of several volts per one grain, and has been confirmed to be connected with the transition of current between two conduction states in the grain boundary region. The obtained results indicate that this phenomenon cannot be interpreted by a rise in the temperature of the materials up to their positive temperature coefficient of resistivity (PTCR) region above the Curie point by Joule heating due to current flow, that is their self-heating effect. This newly observed DNR phenomenon has thus been tentatively interpreted by the morphological change in the ferroelectric domain structure in the vicinity of grain boundaries under mechanical and electric stresses, on an assumption that different configurations of ferroelectric domains yield different conduction states in the grain boundary due to a difference in the degree of surface acceptor charge compensation or the anisotropic carrier mobilities in the crystal.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 80 (1997), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Definite increases in the Curie point (TC) of undoped and lanthanum- (La-) doped (〈0.5 at.%) barium titanate (BaTiO3) ceramics sintered at elevated temperatures in the range of 1300°-1450°C were observed. Both undoped and 0.3 at.% La-doped BaTiO3 (chosen as a typical doping concentration to yield semiconducting materials) ceramics showed almost the same TC behavior; their TC values increased by ∼3.5°C as the sintering temperature was increased from 1300° to 1450°C. Semiconducting 0.3 at.% La-doped materials increased in room-temperature bulk resistivity and TC with increased sintering temperature. The bulk resistivity of the La-doped materials, which was obtained from complex impedance analysis, increased from ∼2 omega cm for the material sintered at 1350°C to ∼6 ω cm at 1450°C. The phenomenon of bulk resistivity increase with sintering temperature was observed in the materials with a doping concentration of ≥ 0.2 at.% La, but was not observed in those doped with 〈0.2 at.% La. The mechanisms of TC and the bulk resistivity increase observed in the present materials with increased sintering temperature are discussed based on various models found in the literature, particularly in terms of the defect chemistry in semiconducting BaTiO3 ceramics and the influence of liquid phases present during sintering.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Thin, semiconducting BaTiO3 ceramic wires prepared in the present study exhibited reversible stress-induced, nonlinear current—;voltage characteristics across several grain boundaries. A remarkable change in resistance with the application (by the three-point bending method) of only ∼1% tensile deformation indicated that the BaTiO3 wires may have potential as stress-sensing devices. Resistance in the BaTiO3 wires bot increased and decreased with increasing tensile stress parallel to the electric fields, far below the ferroelectric transition temperature, Tc; in Sr-substituted wires near Tc, on the other hand, resistance only increased. Detailed studies of the patterns and fluctuation of polarization at grain boundaries could be meaningful, because stress-sensing characteristics may be induced by changes in the relative angle between polarization vectors of adjacent grains.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 169-170 (June 1999), p. 23-26 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of sol gel science and technology 16 (1999), S. 129-134 
    ISSN: 1573-4846
    Keywords: sol-gel processing using metal alkoxides ; BST monolithic gel ; crystallization at low temperature
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract We have investigated on the synthesis of Ba1 − xSrxTiO3 (BST, x = 0.0–1.0) solid solution at low temperature by a sol-gel method using precursor solutions of Ba(OC2H5)2, Sr(OC2H5)2, and Ti(OCH(CH3)2)4 dissolved in 2-methoxyethanol. Crystalline BST solid solution monolithic gels were obtained as dried at 90°C. Crystalline fraction of BST gels increased with increasing concentration of the precursor solution and increasing amount of the hydrolysis water used. Ba0.4Sr0.6TiO3 (x = 0.6) gels from a precursor solution of 0.5 mol/l with hydrolysis water of H2O/Ti = 50 crystallized during aging at 30°C.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Journal of electroceramics 4 (1999), S. 99-103 
    ISSN: 1573-8663
    Keywords: piezoresistive effect ; Barium titanate ; single grain boundary ; spontaneous polarization ; domain morphology
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Extremely large piezoresistive effects with a gage factor (elastoresistance) of 〉 1 × 106 in single grain boundaries of thin ceramic bars of semiconducting barium titanate have been observed at room temperature. Thin barium titanate ceramic bars with a diameter in the range of 10 to 20 μm were prepared to consist of single grains joined together in series. Large piezoresistive effects were observed for some of the single grain boundaries in the present samples under compressive stresses, but no distinct piezoresistance was observed in the grain bulk. A giant piezoresistive effect with a gage factor of 3 × 107 was observed for a single grain boundary which exhibited a saw-tooth type PTCR (positive temperature coefficient of resistivity) characteristic with a significantly large bias dependence of it. This demonstrates that the piezoresistive phenomenon may be interpreted in terms of the change of the potential barrier height due to the change of ferroelectric domain morphologies in the vicinity of grain boundaries under mechanical and electric stresses.
    Type of Medium: Electronic Resource
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