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  • 1
    Electronic Resource
    Electronic Resource
    Current induced degradation in boron-doped hydrogenated amorphous silicon: A novel investigation technique (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1133-1136 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique for controllable degradation and monitoring of a boron-doped layer as used in thin film solar cells is presented. The thin p-type layer under investigation is grown embedded in a n-i-n structure. Upon biasing the structure, excess electrons are injected into the layer giving rise to a degradation process. Complete recovery after annealing indicates the metastable nature of the process. The degree of degradation can be monitored by following changes of the forward current flowing into the structure. A simple model enables the interpretation of the experimental curves in terms of doping activation and increased density of defects in the doped layer. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358976
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  • 2
    Electronic Resource
    Electronic Resource
    Infrared photodetection at room temperature using photocapacitance in amorphous silicon structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1229-1231 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we present a device, based on amorphous silicon material, able to detect infrared light through capacitance measurement at room temperature. The device is a p-c-n stacked structure, where c indicates a compensated amorphous silicon absorber layer. Operation is based on transitions between extended states in the valence band and defects in the forbidden gap excited by the infrared radiation. We found that the measured capacitance is sensitive to radiation from 800 nm to 5 μm. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121022
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  • 3
    Electronic Resource
    Electronic Resource
    Low-temperature admittance measurement in thin film amorphous silicon structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 733-741 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we analyze low-temperature admittance (capacitance and conductance) measurement as an effective tool for the characterization of amorphous silicon doped layers embedded in thin film structures. Temperature and frequency ranges of 20–250 K and 1–100 kHz, respectively, were used. Measurements were performed on p-i silver and p-i-n structures. Devices with different thicknesses, carbon, and boron content of the p-doped layer were examined. The evolution of the conductance of p-i-n solar cells under illumination was also investigated. Results show excellent sensitivity of the measurement to the states of the doped layer. This sensitivity is explained by using a finite difference simulation program, which proves that at low temperature the trapping process is spatially limited to the doped layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365607
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  • 4
    Electronic Resource
    Electronic Resource
    Amorphous Si/SiC three-color detector with adjustable threshold (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1178-1180 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An adjustable threshold color detector (ATCD) is demonstrated, based on a hydrogenated amorphous silicon (a-Si:H) and silicon–carbide (a-SiC:H) p+-i-n+-i-n+-i-p+ multilayer. The ATCD is able to discriminate between blue (λ=450 nm), green (550 nm), and red ((approximately-greater-than)650 nm) illumination by varying the externally applied voltage within a few volts. The operation of the detector can be explained regarding the ATCD as three independent devices connected in series: a p+-i-n+, a n+-i-n+, and a n+-i-p+. The novel feature is the n+-i-n+ cell. It acts as a short circuit under strong illumination, whereas in dark it is equivalent to two low quality back-to-back diodes which introduce a shift in the threshold in the photocurrent detection. Thanks to the large number of physical parameters such as layer thickness and band gap the ATCD appears extremely versatile. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113849
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  • 5
    Electronic Resource
    Electronic Resource
    Amorphous silicon/silicon carbide photodiodes with excellent sensitivity and selectivity in the vacuum ultraviolet spectrum (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 335-337 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An innovative family of thin-film photodetectors optimized for the ultraviolet (UV) spectrum is presented here. The devices are made of hydrogenated amorphous silicon (a-Si:H) and silicon carbide (a-SiC:H) on glass substrates. At room temperature, the photodetectors exhibit values of quantum efficiency of 21% in the vacuum UV and 0.08% at 750 nm, without external voltage. The great advantage of this technology lies in the possibility to produce low-cost, large-area arrays of photodetectors on glass or flexible substrates. All these features candidate the a-Si/SiC:H photodetectors as possible, concurrent to specialized commercial devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115436
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  • 6
    Electronic Resource
    Electronic Resource
    A new method for study of the rectum using transvaginal ultrasound with water enema (1996)
    Springer
    Abdominal imaging 21 (1996), S. 342-344 
    Details
    ISSN: 1432-0509
    Keywords: Key words: Transvaginal ultrasound (TVUS), water enema—Rectum, ultrasound—Rectum studies.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract. Background: To propose a new method for the ultrasound study of the rectum. Methods: Twenty-one healthy female patients, 58–72 years old, were examined. To achieve optimal filling and distention of the rectum, the examination was performed with the patient in the right lateral decubitus position. After placing the probe into the vagina, 1000–1500 mL of water warmed to 35°C was introduced into the rectum through a cannula. After the rectum was completely full, the cannula was extracted. Images were obtained before and after rectum distention on the transverse plane by using a 5.0-MHz convex radial endocavitary probe. Results: Using water eliminated air and fecal artifacts, so rectal wall layers were reliably demonstrated, with the rectal ampulla well distended. In addition, the rectum in whole circumferential extension and the perirectum fat were clearly visualized. Conclusion: This new method is useful for study of the rectum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002619900078
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  • 7
    Electronic Resource
    Electronic Resource
    Benign tyrosinaemia: an 18-year follow-up (1995)
    Springer
    Journal of inherited metabolic disease 18 (1995), S. 641-642 
    Details
    ISSN: 1573-2665
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02436013
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