ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This letter reports an investigation of two unique dual inlaid metallization approaches with low pressure chemical vapor deposition (LPCVD) of aluminum (Al) for sub-0.35 μm ultra-large-scale-integration interconnect technology: (1) warm Al/CVD Al/coherent (coh.) PVD Al/coh. PVD Ti and (2) warm PVD Al/CVD Al/coh. PVD Ti or Al/selective CVD Al. The integration of thin coh. PVD Al, deposited with a physical collimator or a variation of ionized metal plasma technique, was found to be the unique and simple solution in providing void-free via and interconnect structures, which have not been reported elsewhere. Excellent electrical and electromigration results have been obtained. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121731
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