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  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    The soft x-ray photochemistry of physisorbed SiF4. I. Reactions of the molecular species through desorption and dissociation (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 10356-10365 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present evidence that demonstrates photolysis of SiF4 adsorbed on Ge(100) at 30 K. Silicon 2p soft x-ray photoemission spectroscopy (PES) indicates that upon irradiation, the molecularly adsorbed SiF4 dissociates into SiFn species (where n=0,1,2,3) and desorbs as molecular SiF4. Also, the Si 2p PES from undissociated molecules exhibits a number of distinct kinetic-energy shifts. These are attributed to anisotropic adsorption in which different molecular sites have different apparent Si 2p binding energies. A structure of the adsorbate layer is proposed to account for the varying core hole screening. Examination of the gas phase during irradiation confirms molecular desorption and shows the system to have a significant neutral molecular desorption yield. Changes in the valence-level photoemission structure and signal intensity are consistent with the observed fragmentation and desorption, both of which lead to disappearance of the molecularly adsorbed species. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469873
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  • 2
    Electronic Resource
    Electronic Resource
    The soft x-ray photochemistry of physisorbed SiF4. II. Mechanisms and kinetics (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 10366-10377 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present an analysis of the extensive photolysis of an adsorbate resulting from adsorbate core-level excitation. The system studied was SiF4 adsorbed on Ge(100) at 30 K. Photolysis fragments and molecular species (identified with Si 2p soft x-ray photoemission spectroscopy) were measured as a function of monochromatic (140-eV) photon exposure and adsorbate coverage. The photolysis cross sections for 55–140-eV photons were determined and the neutral photon-stimulated desorption cross section for a selected SiF4 excitation is also presented. In the Si 2p absorption region, it was found that the photolysis cross section was one to three times the preedge value and comparable in magnitude to that of gas phase photoabsorption, while the total yield increased at most by a factor of 1.4. Both of these observations indicate that direct core excitation of the adsorbate is a major path by which photolysis occurs as opposed to an indirect, substrate-driven one. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.470703
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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