Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 1202-1204
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Steady-state and transient responses of a nonintentionally doped GaN photodetector are investigated. The kinetics of the photoresponse demonstrate the existence of deep levels in the gap, acting as recombination centers with an acceptor character. The photoresponse displays two competing processes: a bimolecular recombination, dominating at high optical power range, and a monomolecular recombination involving long response times. The observed persistent photoconductivity and the huge photoconductive gain are due to the small electron capture cross section and a much faster hole capture rate. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117411
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