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  • 1995-1999  (9)
  • 1
    Electronic Resource
    Electronic Resource
    Planarization of epitaxial GaAs overgrowth over tungsten wires (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 500-503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on thin GaAs epitaxial overgrowth over tungsten wires. The aim of the study is to overgrow the grating without the formation of voids above the tungsten wires and to investigate the planarization of the growth front over the grating. It is established that the most important factors for rapid planarization of the overgrowth for given epitaxial conditions are the crystallographic orientation of the grating, the grating period, and the ratio of the growth rates for the different facets formed in the growth front. For a 300 nm period grating and a metal width of 100 nm, a planarized growth front is demonstrated after 200 nm of growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360857
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Stacking InAs islands and GaAs layers: Strongly modulated one-dimensional electronic systems (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3360-3364 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With chemical beam epitaxy we stacked small InAs islands, separated by thin GaAs layers. Reflection electron diffraction during growth showed that after a seed-layer growth, subsequent depositions require less InAs to form the islands. At 5 K the stacks have narrower luminescence peaks at lower energies than single island layers, and the stacks luminesce at room temperature. For 4-nm-high pyramidal islands with 20-nm-wide bases, we observed vertical periods down to 5.4 nm, small enough to couple quantum mechanically. The electronic structures possible for this class of objects should be sufficient for designing and observing room temperature quantum mechanical phenomena. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363248
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Self-limiting transformation of monodisperse Ga droplets into GaAs nanocrystals (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1409-1411 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs nanocrystals, of approximate diameter 10 nm, have been produced and deposited on various substrates. The fabrication route allows the production of nanocrystals with a very narrow size distribution. It utilizes the formation of ultrafine Ga particles and their self-limiting reaction with arsine at elevated temperatures. The kinetics of the reaction of Ga to produce GaAs depends on the temperature and the arsine flow. The temperature at which the reaction began was found to be as low as 200 °C. Our approach opens the possibility to produce size-selected nanocrystals of compound semiconductors in a simple, reliable, and efficient way. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116096
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    EFFECTS OF NEW CONTROL SYSTEMS IN SWEDISH HEALTH CARE ORGANIZATIONS (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Financial accountability and management 12 (1996), S. 0 
    Details
    ISSN: 1468-0408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Notes: Organizations that are radically changing their control systems provide interesting arenas for studies of the effects of such systems. Research on public organizations have shown reforms in some cases to have effects but in other cases they have had no effects. The aim of our study is to describe the introduction and effects of a new control system in the Swedish health care sector. Basically a traditional budget system is replaced with a system according to which hospitals are paid for services made. We found that the new system had functional but also some dysfunctional effects. The major functional effect was an increased productivity. This was possible due to an earlier low level of productivity. However, increased productivity demands capacity reductions given a certain production level. Such decisions must be taken by politicians but they are, however, very reluctant to reduce capacity, which may cause serious disturbances in the system and dysfunctional consequences.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1468-0408.1996.tb00420.x
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  • 5
    Electronic Resource
    Electronic Resource
    Lateral confinement in a resonant tunneling transistor with a buried metallic gate (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 311-313 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a resonant tunneling transistor by epitaxial overgrowth over a tungsten grating placed 30 nm above a GaAs/GaInP semiconductor, double barrier, resonant tunneling heterostructure. The Schottky depletion around the buried metal contacts controls the current to a vertical transistor channel. The lateral extension of this channel is defined by a square opening in the grating with a side length of 1.4 μm, which corresponds to a sub-μm electrical width. The transport properties at 20 K show a fine structure in the resonant tunneling characteristics, and it is affected by the gate bias. These effects are discussed in terms of lateral quantum confinement in the transistor channel defined. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123008
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  • 6
    Electronic Resource
    Electronic Resource
    Cathodoluminescence spectroscopy and imaging of individual GaN dots (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3513-3515 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uncapped GaN dots on AlGaN barrier material, grown by metal organic chemical vapor deposition on 6H–SiC substrates, were studied. Cathodoluminescence (CL) microscopy and scanning electron microscopy (SEM) were used to investigate both luminescence and structure of individual GaN dots. The correlation between the luminescence and the actual position of self-assembled dots was demonstrated. The position of a dot was established with high resolution SEM and a CL image was used to display the corresponding luminescence. The spectrum from a single dot was obtained by positioning the electron beam on one particular dot. The luminescence from dots with a lateral size of 100 nm and a height of 40 nm was determined to be 3.47 eV. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124147
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  • 7
    Electronic Resource
    Electronic Resource
    Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2228-2230 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The assembly of strained InAs islands was manipulated through growth on patterned GaAs substrates with chemical beam epitaxy. Conditions were found to selectively place the islands in patterns features but not on surrounding unpatterned fields. Chains of islands having 33 nm minimum periods were formed in trenches, and single or few islands were grown in arrays of holes. When capped with GaAs, the islands behave as quantum dots and are optically active. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115867
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  • 8
    Electronic Resource
    Electronic Resource
    Mechanical tuning of tunnel gaps for the assembly of single-electron transistors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1461-1463 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated gold single-electron transistors (SETs), operating up to 25 K, with tunnel gaps that could be individually tuned during fabrication. A combination of atomic-force-microscopy manipulation of nanodiscs and in situ electrical measurements was used to form statically stable tunnel gaps between the discs and lithographically defined electrodes. The gap resistances could be tuned to predetermined values over three orders of magnitude between ∼1 MΩ and ∼2 GΩ, corresponding to gap widths in the range of 3–10 Å. We report on SETs with symmetrically and asymmetrically coupled islands, i.e., with equal or different tunnel resistances. In the asymmetric SET a distinct Coulomb staircase was observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124725
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  • 9
    Electronic Resource
    Electronic Resource
    Gold Nanoparticles: Production, Reshaping, and Thermal Charging (1999)
    Springer
    Journal of nanoparticle research 1 (1999), S. 243-251 
    Details
    ISSN: 1572-896X
    Keywords: gold ; nanoparticles ; size selection ; thermal charging ; particle synthesis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics , Technology
    Notes: Abstract Gold nanoparticles are of great interest for various nanoelectronic applications, e.g., for making single electron transistors or very fine leads to molecular size entities. For this and other applications, it is important that all particles have controllable size and shape. In this paper, we describe the production of size-selected gold aerosol particles in the 20 nm range made by evaporation in a high-temperature tube furnace and subsequent size selection. To obtain spherical particles, it was necessary to reshape the particles at high temperature, which was investigated for temperatures between 25°C and 1200°C. High-resolution transmission electron microscopy showed that the degree of crystallinity became higher for higher reshaping temperature. During reshaping at high temperature, an anomalous charging behavior was discovered, whereby negatively as well as positively charged particles became multiply negatively charged. Possible mechanisms for explaining this thermally activated phenomenon are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1010012802415
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