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  • 1
    Electronic Resource
    Electronic Resource
    Formation of mesostructures at the surface of ferritic steel and a nickel monocrystal under increasing load – an in situ AFM experiment (1998)
    Springer
    Applied physics 66 (1998), S. 1113-1116 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.30; 61.55.F
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 2 was examined by AFM in contact mode. On loading the polycrystalline sample the surface roughness increases and visible mesoscopic structures of about 25 μm in diameter appear. The fractal dimension df of the surface topography was analyzed and it was found that df starts to increase at the yield strength and finally ends in a plateau. Investigation of the nickel monocrystal showed the formation of well-characterized slip bands and non-regular substructures beyond a short elastic region. The development of the fractal dimension is similar to that of the polycrystalline steel sample. The results obtained are discussed in the framework of mesomechanics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/
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  • 2
    Electronic Resource
    Electronic Resource
    Strain-induced photoreflectance spectra in the vicinity of the E 0 transition in GaAs/Si and InP/Si heterostructures (1999)
    Springer
    Physics of the solid state 41 (1999), S. 654-659 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A study is reported of the structure of photoreflectance (PR) spectra in the vicinity of the E 0 transition from thin (d=1–5 µm) n-GaAs and n-InP films (n=1016–1017 cm−3) grown epitaxially on Si(001) substrates. A quantitative analysis of the spectra involving multi-component fitting shows that the electronic optical transition from the {3/2;±1/2} subband provides a dominant contribution to the intermediate-field electromodulation component in both systems. The splitting observed in the GaAS/Si PR spectra near the main peak are accounted for not by the strain-induced valence-band splitting but rather by a spectral superposition of the intermediate-field component due to the {3/2;±1/2} subband with a low-energy excitonic component. The analytically established transition energy E 0 3/2;±1/2 is used to calculate biaxial strains in epitaxial films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130843
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  • 3
    Electronic Resource
    Electronic Resource
    Lock-in-phase analysis of n-GaAs photoreflectance spectra (1998)
    Springer
    Semiconductors 32 (1998), S. 245-249 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The phase dependence of the photoreflectance signal in the region of the E 0 transitions in GaAs samples has been investigated using the two-channel lock-in technique. The spectral components and their synchronous phases have been established as the result of a detailed analysis of the photoreflectance spectra. The time constants of the photoreflectance signal have been calculated for the observed single-component and multicomponent photoreflectance spectra. The time dependence ΔR/R j∼±exp(−t/τ j) of the photoreflectance signal is due to the delayed reaction to the photomodulation of the electric field in the region of the semiconductor surface or interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187549
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  • 4
    Electronic Resource
    Electronic Resource
    Identification of the multicomponent nature of E 0 photoreflectance spectra from moderately doped GaAs substrates (1997)
    Springer
    Physics of the solid state 39 (1997), S. 1900-1905 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The paper considers methods used to identify the multicomponent character of photoreflectance (PR) spectra in the vicinity of the E 0 transition measured at room temperature from moderately doped GaAs substrates. It is shown that that if an E 0 PR spectrum contains an excitonic component, its presence can be established from both a mathematical and phase analysis, as well as from measurements performed at different laser excitation densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130196
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  • 5
    Electronic Resource
    Electronic Resource
    On the existence of an intrinsic glass transition in a fragile liquid: polyvinylacetate (1996)
    Springer
    Colloid & polymer science 274 (1996), S. 490-495 
    Details
    ISSN: 1435-1536
    Keywords: Glass transition ; time dependent properties ; high performance Brillouin scattering ; Polyvinylacetate
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Time domain Brillouin spectroscopy has been used as a definitive experimental approach to demonstrate the intrinsic nature of the thermal glass transition in Polyvinylacetate. The transition from the equilibrium liquid to the ideal glassy state appears at the ultimate temperatureT gs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00652473
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  • 6
    Electronic Resource
    Electronic Resource
    About the microstructure of PCVD prepared crystal mats of statistical oligo-vinylidene-fluoride-trifluoroethylene in relation to other fluorinated polymers (1995)
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part B: Polymer Physics 33 (1995), S. 237-246 
    Details
    ISSN: 0887-6266
    Keywords: oriented fluoro-oligomers ; chemical vapor deposition ; ferroelectricity ; glass transition ; Brillouin spectroscopy ; x-ray diffraction ; vinylidene fluoride ; trifluoroethylene ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: The room temperature phase of the physical/chemical vapor-deposited statistical co-oligomer VDF/TrFE(70/30) has been characterized by different experimental methods such as small-angle x-ray scattering, wide-angle x-ray diffraction, size-exclusion chromatography, infrared absorption and optical refractometry. The characterization of the elastic properties was carried out using high-performance Brillouin spectroscopy in connection with special scattering geometries. The co-oligomer VDF/TrFE(70/30) was obtained by cracking the parent statistical copolymer and subsequently vapor depositing the shortened chains on highly oriented PTFE substrates (PIA-technique). The room temperature phase of the resulting oriented waxy crystal mats of VDF/TrFE(70/30) is predominantly ferroelectric. The physical properties are very different to those of similarly PIA-prepared n-alkanes, perfluoroalkanes, and blockfluoroalkanes. The microstructure of VDF/TrFE(70/30) is interpreted in terms of partially crystalline nano-sized structures giving rise to a marked freezing process below room temperature. © 1995 John wiley & Sons, Inc.
    Additional Material: 11 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/polb.1995.090330208
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    AFM Characterization of Ta-based Diffusion Barriers for Use in Future Semiconductor Metallization (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 522-528 
    Details
    ISSN: 0142-2421
    Keywords: Ta ; diffusion barriers ; nanocrystalline films ; amorphous films ; AFM ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: In this paper the investigation of r.f.-sputter-deposited Ta, Ta-N and Ta-N-O thin films is presented. Using atomic force microscopy in combination with sheet resistance measurements, Auger electron spectroscopy and x-ray diffraction, the thin film properties and microstructure are examined. Two crystalline modifications of Ta (tetragonal β-Ta and bcc α-Ta) are reported. By incorporation of nitrogen and/or oxygen into the Ta films, nanocrystalline and quasi-amorphous structures can be achieved. Finally, the usefulness of the films as diffusion barriers in Cu-based metallization systems is described.© 1997 John Wiley & Sons, Ltd.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
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