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  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Improved electron-beam patterning of Si with self-assembled monolayers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4245-4247 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A set of processes has been explored that enhances the utility of self-assembled-monolayer electron-beam resists for patterning silicon. A self-assembled monolayer resist of octadecylsiloxane was exposed using a scanning electron microscope with a 20 keV beam energy and dose of 320 μC/cm2. After the patterned monolayer was developed using ultraviolet light and ozone, it served as a wet etch mask for the underlying native oxide. Linewidths of ∼30 nm were etched in silicon using the patterned oxide as a reactive ion etch mask. The maximum etch depth achieved in silicon was 90 nm using this process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116959
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Sub-10 nm lithography with self-assembled monolayers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1504-1506 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dots demonstrating critical resist dimensions of approximately 5 to 6 nm were formed in an octadecylsiloxane monolayer on silicon by electron beam exposure using a digital scanning electron microscope at 20 keV beam energy. The patterned dots were observed by imaging with an atomic force microscope (AFM). The electron beam size was measured to confirm that it is not the limiting factor in the exposure resolution. The limit that prevents the observation of smaller structures is either the small contrast in the AFM imaging for smaller dots or an intrinsic material limit caused by the secondary electron range. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115680
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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