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  • 1995-1999  (18)
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  • 1
    Electronic Resource
    Electronic Resource
    Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6786-6789 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Proton irradiation with subsequent rapid thermal annealing was used to investigate intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells. Large photoluminescence (PL) energy shifts were observed in both materials. Comparatively, InGaAs/AlGaAs samples showed larger PL energy shifts than InGaAs/GaAs samples because of the presence of Al in the barriers and also better recovery of PL intensities, which is mainly due to dynamic annealing effects in AlGaAs during irradiation. Based on this, InGaAs/AlGaAs quantum-well lasers were fabricated and up to 49.3-nm-emission wavelength shift was observed in the proton-irradiated laser with no significant degradation in device characteristics. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370291
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  • 2
    Electronic Resource
    Electronic Resource
    Ion damage buildup and amorphization processes in AlxGa1−xAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 87-94 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of keV ion damage buildup and amorphization in AlxGa1−xAs at liquid-nitrogen temperature is investigated for various Al compositions using Rutherford backscattering channeling, transmission electron microscopy, and in situ time-resolved-reflectivity techniques. Two distinct damage buildup processes are observed in AlxGa1−xAs depending on Al content. At low Al content, the behavior is similar to GaAs whereby collisional disorder is "frozen in'' and amorphization proceeds with increasing dose via the overlap of damage cascades and small amorphous zones created by individual ion tracks. However, some dynamic annealing occurs during implantation in AlGaAs and this effect is accentuated with increasing Al content. For high Al content, crystallinity is retained at moderate ion damage with disorder building up in the form of stacking faults, planar, and other extended defects. In the latter case, amorphization is nucleation limited and proceeds abruptly when the level of crystalline disorder exceeds a critical level. The amorphization threshold dose increases with increasing Al composition by over two orders of magnitude from GaAs to AlAs. Dynamic annealing and damage creation processes during implantation compete very strongly in AlxGa1−xAs even at liquid-nitrogen temperatures. This behavior is discussed in terms of both the availability of very fast mobile defects and bonding configurational changes related to the Al sublattice in AlxGa1−xAs of high Al content. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359358
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  • 3
    Electronic Resource
    Electronic Resource
    Ion damage buildup and amorphization processes in GaAs–AlxGa1−xAs multilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2691-2701 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of ion damage buildup and amorphization in GaAs–AlxGa1−xAs multilayers at liquid-nitrogen temperature is investigated for a variety of compositions and structures using Rutherford backscattering-channeling and cross-sectional transmission electron microscopy techniques. In this multilayer system, damage accumulates preferentially in the GaAs layers; however, the presence of AlGaAs enhances the dynamic annealing process in adjacent GaAs regions and thus amorphization is retarded close to the GaAs–AlGaAs interfaces even when such regions suffer maximum collisional displacements. This dynamic annealing in AlGaAs and at GaAs–AlGaAs interfaces is more efficient with increasing Al content; however, the dynamic annealing process is not perfect and an amorphous phase may be formed at the interface above a critical defect level or ion dose. Once an amorphous phase is nucleated, amorphization proceeds rapidly into the adjacent AlGaAs. This is explained in terms of the interplay between defect migration and defect trapping at an amorphous–crystalline or GaAs–AlGaAs interface. In addition, enhanced recrystallization of the amorphous GaAs at the interface may occur during heating if an amorphous phase is not formed in the adjacent AlGaAs layer. This is most likely the result of mobile defects injected from the AlGaAs layer during heating. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363186
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of deep levels and carrier compensation created by proton irradiation in undoped GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1481-1487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels and carrier compensation created in undoped metal-organic chemical-vapor deposition grown GaAs by low fluence proton irradiation (1×108−1×1010 cm−2) are investigated by the deep level transient spectroscopy technique and capacitance-voltage profiling. At least five main electron traps are observed after room-temperature irradiation in addition to the EL2 present in the as-grown material. Irradiation generates additional EL2, which annihilate at much lower temperatures than one would expect for isolated EL2. However, with further increase in irradiation fluence, the magnitude for this additional increment begin to decrease. The apparent decrease in the EL2 peak is accompanied by an increase of a broad peak in the deep level transient spectroscopic spectrum. This broad peak has a highly nonexponential capacitance transient and it is suggested to result from the interaction of the additional EL2 with EL6. One of the observed traps, with energy level, (Ec−0.40) eV, has not previously been reported in proton irradiated GaAs. The signature of this trap resembles that of EL5 and is quite stable at moderate annealing temperatures; annihilating completely only at a temperature of ∼600 °C. This level shows a saturation effect with increasing irradiation dose and we believe it is related to complex defect-impurity formation. The temperature dependence of the carrier profiles reveals some complex behavior of carrier compensation, including acceptor- and donor-like properties of the various traps. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360237
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  • 5
    Electronic Resource
    Electronic Resource
    Annealing of ion implanted gallium nitride (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1190-1192 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, we examine Si and Te ion implant damage removal in GaN as a function of implantation dose, and implantation and annealing temperature. Transmission electron microscopy shows that amorphous layers, which can result from high-dose implantation, recrystallize between 800 and 1100 °C to very defective polycrystalline material. Lower-dose implants (down to 5×1013 cm−2), which are not amorphous but defective after implantation, also anneal poorly up to 1100 °C, leaving a coarse network of extended defects. Despite such disorder, a high fraction of Te is found to be substitutional in GaN both following implantation and after annealing. Furthermore, although elevated-temperature implants result in less disorder after implantation, this damage is also impossible to anneal out completely by 1100 °C. The implications of this study are that considerably higher annealing temperatures will be needed to remove damage for optimum electrical properties. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121030
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum: "Picosecond carrier lifetime in GaAs implanted with high doses of As ions: An alternative to low-temperature GaAs for optoelectronic applications'' [Appl. Phys. Lett. 66, 3304 (1995)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1735-1735 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116788
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  • 7
    Electronic Resource
    Electronic Resource
    Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1305-1311 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photoluminescence, transmission electron microscopy, and quantum well modeling were used to understand the effects of intermixing on the quantum well shape. Residual water in the oxide was found to increase the intermixing, though it was not the prime cause for intermixing. Injection of defects such as group III vacancies or interstitials was considered to be a driving force for the intermixing. Different current densities used in the experimental range to create anodic oxides had little effect on the intermixing. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366830
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  • 8
    Electronic Resource
    Electronic Resource
    High resistivity and picosecond carrier lifetime of GaAs implanted with MeV Ga ions at high fluences (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1724-1726 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering spectrometry-channeling, double-crystal x-ray diffraction, optical absorption studies, and electrical measurements have been carried out on 2 MeV Ga-implanted GaAs at fluences of 1×1015 and 5×1015 cm−2. Implanted samples exhibited a strain field associated with implantation-induced damage, low resistivity due to hopping conduction and mobilities of about 1 cm2/V s. Annealing of these samples at 600 °C caused substantial recovery of postimplant damage and an increase of resistivity of more than four orders of magnitude, with mobility up to about 2600 cm2/V s. Photocarrier lifetime of annealed samples is in the few picoseconds range. These properties are strikingly similar to those of arsenic implanted GaAs, suggesting that arsenic precipitates are unlikely to be solely responsible for short carrier lifetime in the latter case. Thus Ga-implanted GaAs may be an interesting prospect for fast optoelectronic device applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115029
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  • 9
    Electronic Resource
    Electronic Resource
    Picosecond carrier lifetime in GaAs implanted with high doses of As ions: An alternative material to low-temperature GaAs for optoelectronic applications (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3304-3306 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonstoichiometric GaAs obtained by implantation with 2 MeV arsenic ions at 1015 cm−2 dose is studied. As-implanted samples show a 〈200 fs lifetime of photocarriers and low resistivity due to hopping, with mobility less than 1 cm2/V s. Annealing of the samples at 600 °C leads to substantial recovery of postimplant damage, as seen from Rutherford backscattering channeling spectra and mobility increase to about 2000 cm2/V s, but photocarrier lifetime is still about 1 ps. These parameters are similar to those of low-temperature GaAs annealed at 600 °C, and make arsenic implanted GaAs an interesting material for optoelectronic applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113738
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  • 10
    Electronic Resource
    Electronic Resource
    Damage to epitaxial GaN layers by silicon implantation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion channeling and cross-sectional transmission electron microscopy were used to study the extent and nature of Si ion implantation damage in epitaxial GaN layers at liquid nitrogen temperature. Results indicate that displacement damage produced by the implantation undergoes substantial dynamic annealing during implantation. As a result, at moderate implantation doses residual implantation damage consists of a dense network of secondary defects, such as clusters and loops, which are a consequence of incomplete annihilation of implantation-produced defects. Amorphous layers can be produced, but the doses required are extremely high ((approximately-greater-than)1016 cm−2) and amorphization appears to "nucleate'' at the surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117526
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