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Supercurrents in HgBa2CaCu2O6+δ and TlBa2CaCu2O7 epitaxial thin films (1999)

Gapud, A. A. ; Wu, J. Z. ; Fang, L. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 74 (1999), S. 3878-3880

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The availability of high-quality epitaxial thin films of HgBa2CaCu2O6+δ (Hg-1212) and TlBa2CaCu2O7 (Tl-1212) with high critical current densities (Jc) has made it possible to examine and compare the Jc of these species. Results reveal that the Jc of 1212 species have very similar temperature behavior at low fields, strongly suggesting that the 30 K shift in critical temperature (Tc) induced by the exchange of Hg and Tl in the 1212 structure is due largely to a change in charge carrier density and/or electronic band structure. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.124210

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Cation exchange: A scheme for synthesis of mercury-based high-temperature superconducting epitaxial thin films (1999)

Wu, J. Z. ; Yan, S. L. ; Xie, Y. Y.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 74 (1999), S. 1469-1471

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A cation-exchange process has been developed for growth of high-quality epitaxial thin films of highly volatile mercury-based high-temperature superconductors. By selecting epitaxial precursor matrices of TlyBa2CaCu2Ox (y=1,2) and annealing them in Hg vapor, c-axis-oriented epitaxial HgBa2CaCu2O6+δ thin films with superior quality were formed through Tl and Hg-cation exchange. At 110 K, these films can carry supercurrent density close to 1 MA/cm2 which is nearly an order of magnitude higher than the best reported previously. This cation-exchange technique also provides a general scheme for synthesis of other volatile compounds with predesigned structure and composition. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.123583

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High critical current density in epitaxial HgBa2CaCu2OX thin films (1998)

Yan, S. L. ; Xie, Y. Y. ; Wu, J. Z. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 2989-2991

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: High quality superconducting HgBa2CaCu2Ox (Hg-1212) thin films have been reproducibly fabricated using cation-exchange method. The thin films have pure Hg-1212 phase and have smooth surface morphology. The superconducting transition temperatures of these films are in the range of 120–124 K. The critical current density Jc is up to 3.2×106 A/cm2 at 77 K and drops only by a factor of 2 at 100 K and self field. At 110 K, a Jc of 7.8×105 A/cm2 has been obtained. X-ray diffraction pole figures show that these films are epitaxially grown on LaAlO3(001) substrates, which is consistent with a χmin of 19% obtained using Rutherford backscattering/channeling analysis. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.122653

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