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  • 1990-1994  (7)
  • 1985-1989  (1)
  • 1970-1974  (1)
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 6 (1973), S. 642-649 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 26 (1993), S. 3992-3998 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Theoretical and mathematical physics 99 (1994), S. 668-674 
    ISSN: 1573-9333
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics , Physics
    Notes: Abstract q-Discrete versions of the two-dimensional Toda molecule equation and the two-dimensional Toda lattice equation are proposed through the direct method. The Bäcklund transformation and the Lax pair of the former are obtained. Moreover, the reduction to theq-discrete cylindrical Toda equations is also discussed.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1741-0444
    Keywords: Artificial endocrine pancreas ; Diabetes mellitus ; Fourier transform infrared spectroscopy ; Glucose monitoring ; Noninvasive blood glucose measurement ; Second derivative
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Notes: Abstract Whether Fourier transform infra-red spectroscopy with an attenuated total reflection prism could be applied for noninvasive glucose measurement through oral mucosa was evaluated. As a result, the same absorbance peak at 1033 cm−1 as in glucose aqueous solution was found in the absorbance spectra through mucous membrane. However, these glucose specific peaks were interfered with by the baseline drifts owing to prism attachment and the background spectra from body constituents other than glucose. Therefore, to eliminate these interferences, the calibration curve between the second derivatives of the absorbance peak at 1033 cm−1 and those at 2920 cm−1 was calculated (r=0·910). By using this calibration curve, the spectral changes due to prism attachment were first eliminated. Secondly, by obtaining the second derivative of the difference between the postprandial absorbance peak and the fasting sample as a characteristic of an individual, high correlations between the corrected second derivatives of absorbance spectra through the mucous membrane of the lip at 1033 cm−1 and the increases in blood glucose concentrations above fasting levels were observed (r=0·910). In conclusion, it was suggested that Fourier transform infra-red spectroscopy could be useful for noninvasive monitoring of glucose through oral mucosa.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 15 (1990), S. 433-439 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: This paper reports the developments of evaluation methods on epitaxially grown superlattices by means of sputterassisted Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). AlGaAs/GaAs semiconductor superlattics were grown epitaxially by metal-organic chemical vapour deposition (MOCVD). The layer thickness of the superlattices ranged from a few to ten nanometers.Firstly, developments of Auger depth profiling were tried by using: (1) a differential pumping-type ion gun instead of a static pressure type to reduce the oxygen adsorbates on the AlGaAs layer; (2) low-energy Auger signals instead of high-energy ones to shorten the escape depth; and (3) the lowest ion etching energy of 0.2 keV instead of 1 keV to reduce the surface roughening effects. It is shown that the depth resolution of sputter-assisted AES is attainable to 1.5 nm.Secondly, high-resolution SEM can be used as an easy evaluation method by observing the cleaved surface of superlattices, since the layers can be distinguished by signal contrast. Also, TEM can be used as an evaluation method by observing the (110) cross-section thinned sample. The dark field image has a high contrast between AlGaAs and GaAs using the (002) diffraction.It is confirmed from these AES, SEM and TEM evaluations that the hetero-interface abruptness of AlGaAs/GaAs superlattices grown by MOCVD is of the order of one monoatomic layer.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 20 (1993), S. 1061-1066 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A GaAs/AlAs superlattice growth by metal-organic chemical vapour deposition is being proposed as the single crystalline multilayer reference material for sputter depth profiling. This material was characterized by transmission electron microscopy experiments, which showed that the interface between GaAs and AlAs is atomically flat. The preliminary depth profiling experiments were carried out by AES and SIMS.The AES experiments were performed using a Perkin-Elmer SAM 660 scanning Auger microprobe and the SIMS experiments were carried out using a VSW multitechnique XPS/SIMS surface analysis system.The AES and SIMS sputter depth profiling experiments proved that the depth resolution was found to be almost constant for each interface when an Ar+ beam was used for sputtering. Therefore the sputtering-induced roughness is very small for this material with Ar+ beam profiling, the depth resolution deteriorated as a function of depth, indicating oxygen ion beam-induced surface roughening.For both AES and SIMS, the depth resolution improved for ion beams with lower kinetic energy and more glancing angles of incidence.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 22 (1994), S. 22-26 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: An evaluation of the depth resolution of sputter-assisted Auger electron spectroscopy (AES) has been studied for semiconductor superlattices. Zalar et al. have shown that sample rotation is effective in improving the depth resolution of AES depth profiling. Multilayers with two kinds of crystalline states were prepared to test the effectiveness of sample rotation. First, a microcrystalline Zr/Nb (10 nm/10 nm) multilayer was deposited by dc-sputtering. Secondly, an AlAs/GaAs (10 nm/9 nm) and an InP/InGaAs (3 nm/3 nm) single crystalline superlattice were grown by metal-organic chemical vapor deposition.AES depth profiling with Ar+ ion sputtering was performed on these multilayers with and without sample rotation. Comparing the rotational depth profiling results with those obtained on stationary samples, it is found that, in the cases of the Zr/Nb and the InP/InGaAs multilayers, the depth resolution was considerably improved by sample rotation while in the case of AIAs/GaAs multilayer the depth resolution was only little improved by sample rotation. It is shown that the effectiveness of sample rotation strongly depends on the crystalline states of samples and on the degree of preferential sputtering.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 331-335 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Methods of evaluation of the chemical composition of tantalum oxide films and of the interface between tantalum oxide films and Si substrates were studied by means of sputter-assisted Auger electron spectroscopy (AES). Tantalum oxide films 10-50 nm thick were grown on Si single-crystal substrates by low-pressure chemical vapour deposition (LPCVD). It has been found that reduction of the oxides is induced by ion sputtering during Auger depth profiling. Therefore we optimized the ion-sputtering conditions to minimize the reduction rate. Then, using stoichiometric β-Ta2O5 as reference, it was confirmed that as-deposited tantalum oxide films were oxygen-deficient and that the oxygen content of these films was increased by subsequent annealing in an O2 ambient. By means of Auger depth profiling, we evaluated the thickness of silicon native oxides formed at the Ta2O5/Si interface as 1.5-2 nm. Moreover, we revealed the oxidation mechanism of a silicon nitride intermediate layer (e.g. 10 nm thick) deposited between tantalum oxide film and an Si substrate during heat treatment at 900-1000°C in O2.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
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