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  • 1
    Electronic Resource
    Electronic Resource
    Spectral hole burning in glasses and polymer films: the Stark effect (1986)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 90 (1986), S. 6777-6785 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100284a013
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  • 2
    Electronic Resource
    Electronic Resource
    Electron mobility in single- and polycrystalline Ga2O3 (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 300-305 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ga2O3 is a purely n-conducting metal oxide at high temperatures. Increasing interest is being shown in this material as the basic material for gas sensors since its electrical conductivity is gas dependent. To investigate its electrical conductivity mechanism in the temperature range between 800 and 1000 °C, conductivity and Hall measurements were performed on single crystals and on polycrystalline ceramics. In the conductivity measurements, identical results were obtained with dc and low-frequency ac, thus confirming the notion of purely electron current transport. A thermally activated specific conductivity is observed in both cases, that of the single crystals lying around three and a half orders of magnitude above that of the ceramic. The carrier densities are determined from the Hall measurements, a thermally activated behavior always being observed. The carrier density of the ceramic is only 2×1013 cm−3 at 1000 °C, that of the single crystals lying somewhat more than three orders of magnitude above this. The Hall mobilities are determined by combining the conductivity and Hall measurements. Within the limits of measurement accuracy, the Hall mobilities in the ceramic and the single crystals are shown to be identical. The Hall mobility is about 10 cm2/V s at 1000 °C with a thermal activation energy of about 0.6 eV. The results suggest that conduction in Ga2O3 at high temperatures is well described by the small polaron model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354107
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  • 3
    Electronic Resource
    Electronic Resource
    Adsorption, desorption, and surface diffusion kinetics of NH3 on MgO(100) (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 8521-8531 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Laser-induced thermal desorption (LITD) techniques were used to study the adsorption, desorption, and surface diffusion kinetics of NH3 on MgO(100) single-crystal surfaces. Isothermal LITD adsorption measurements revealed that the sticking coefficient of NH3 on MgO(100) was constant vs coverage and decreased with increasing surface temperature. The adsorption kinetics were consistent with a mobile precursor intermediate. In addition, the saturation NH3 coverage on MgO(100) was strongly dependent on temperature, and decreased by a factor of 5 as temperature increased from 130 to 165 K. Isothermal and linear temperature ramp LITD experiments indicated that the desorption kinetics of NH3 from MgO(100) could be modeled using a first-order rate law with a coverage-dependent desorption activation energy. The coverage dependence of the desorption activation energy was consistent with repulsive lateral interactions between NH3 adsorbates on the MgO(100) surface. The surface diffusion of NH3 on MgO(100) was also examined using LITD techniques. In contrast to recent predictions of NH3 surface diffusion on MgO(100), no evidence of NH3 surface mobility (D≤10−9 cm2/s) was observed for temperatures as high as 165 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461281
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  • 4
    Electronic Resource
    Electronic Resource
    Spectral hole burning and holography. III. Electric field induced interference of holograms (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 2299-2307 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The electric field induced superposition of holograms recorded by spectral hole burning is investigated. Holograms have been burned at adjacent positions in a plane defined by wavelength and electric field. Application of an appropriate electric field to the sample causes the components of adjacent holograms to overlap as the spectral holes split due to Stark shifts of molecular transition frequencies. The diffraction efficiency of such superimposed holograms depends on their relative phase and has been studied theoretically and experimentally. It is shown that for zero phase difference, constructive interference leads to a strong diffraction efficiency whereas for a phase difference of π, the gratings cancel leading to zero diffraction efficiency. Experiments have been performed with the dye cresyl violet in a polyvinylbutyral film at a temperature of 1.7 K and the data are compared with computer simulations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459009
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  • 5
    Electronic Resource
    Electronic Resource
    Spectral hole burning and holography. II. Diffraction properties of two spectrally adjacent holograms (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 2748-2755 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The first paper in this series presented a detailed analysis of the diffraction efficiency of a single holographic grating obtained by spectral hole burning. This paper covers the influence of phase changes which occur during the burning of a single hologram, and the interaction of spectrally adjacent two laser induced gratings. A theoretical description of the holographic efficiencies which takes into account the influence of the relative phases between the two gratings. Experimental results are presented and discussed in terms of the theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457920
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  • 6
    Electronic Resource
    Electronic Resource
    Spectral hole-burning and holography. I. Transmission and holographic detection of spectral holes (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 6728-6736 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Holographic detection is compared with the more common transmission method. The signal shapes of the optical holes determined by both techniques are studied theoretically and experimentally as a function of the burning fluence. From a comparison of the transmission signals and the holographic signals, the homogeneous linewidth can be determined. Experimental data was obtained from free base chlorin (1,2-dihydroporphyrin) in a polyvinylbutyral film at a temperature of 1.7 K. From these measurements a homogeneous linewidth of 350 MHz was determined. Limits of sensitivity of the holographic detection method are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457340
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of grain size of sputtered cerium-oxide films on their electrical and kinetic behavior at high temperatures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3991-3999 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Following an annealing process of several hours duration at a temperature of at least 1100 °C, reactively sputtered cerium-oxide films with film thicknesses ranging from 0.5 to 3 μm show a dependence of electric conductivity on oxygen partial pressure similar to that of polycrystalline bulk material within the temperature range studied (700 to 1000 °C). But films with comparatively small grain structures have specific electrical conductivities that are as much as an order of magnitude higher than those of large-grained structures, let alone bulk materials. This outcome justifies the supposition that the carrier transport in CeO2−x thin films occurs in a grain barrier layer within which electrons are enriched. This negative carrier enrichment layer may be due to a positive surface charge. An investigation of the interaction between oxygen vacancies of CeO2−x thin films and the oxygen of the environment showed that for layer thickness of from 1 to 3 μm and temperatures of 700–1000 °C, the reaction of the oxygen molecules at the surface is always the kinetics-governing step. Above 950 °C the transport reaction through the laminar boundary zone on the surface determines the reaction kinetics. Under these conditions the volume diffusion of oxygen vacancies in the thin film proceeds more rapidly than the surface reaction or the gas-phase transport of oxygen molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356021
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  • 8
    Electronic Resource
    Electronic Resource
    Photocapacitance characteristics of amorphous-silicon Schottky diode sensor arrays and their changes due to the Staebler–Wronski effect (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 585-590 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capacitance measurements on a-Si:H Schottky diodes reported in the literature refer to large-area (some 10-mm2) specimens and were carried out in the dark at frequencies typically around 10 Hz. The main interest in these publications is the determination of the density of states in the band gap. For linear photodetector array applications, however, interest centers around the voltage and frequency characteristics of the capacitance of small-area back-to-back Schottky diodes under illumination and at frequencies typically around 1 kHz. But photoinduced changes in the capacitance are also of significance with a view to possible read-out circuits and their long-term stability. The capacitance was therefore measured over the frequency range 0.2–20 kHz and over the voltage range −5 to +5 V. Whereas the dark capacitance exhibited no changes due to photoinduced degradation, significant differences between degraded and nondegraded states were observed in the voltage and frequency characteristics of the photocapacitance. During degradation under high bias voltage (−5 V), the maximum of the capacitance shifted from −0.1 to +0.4 V indium tin oxide bias voltage and the capacitance showed a distinct increase. The photoinduced changes observed for the photocapacitance characteristics could be minimized by ensuring that the elements adjacent to the sensor were at equipotential with the sensor. Full reversibility of the photoinduced changes due to thermal annealing could be verified. The changes of the C-V and C-ω characteristics can be explained by the occurence of the well-known Staebler–Wronski effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338209
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature and stress dependence of Young's modulus in semiconducting barium titanate ceramics (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 702-704 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to study the temperature and stress dependence of Young's modulus in semiconducting barium titanate ceramics, the longitudinal sound velocity was measured at a frequency of 5 MHz in the temperature range of 20–180 °C. It is striking that at temperatures above the Curie point (Tc=120 °C) the sound velocity reaches values that are 10–20% higher than those at room temperature. Furthermore, a shift of the Curie point of about 2×10−8 K/Pa is observed if uniaxial stress is applied perpendicular to the sound propagation. Both effects can be understood by means of the phenomenological theory of Devonshire.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336185
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  • 10
    Electronic Resource
    Electronic Resource
    Photoinduced degradation of reverse-biased small-area a-Si:H Schottky barriers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2681-2685 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoinduced changes (Staebler–Wronski effect) in the photocurrent and dark current of a reverse-biased small-area Schottky barrier made from amorphous silicon are investigated. The well-known, small reductions in the photocurrent are contrasted with the large increases in the dark bias current. This behavior of the dark bias current is a new phenomenon and cannot be explained on the basis of a bulk mechanism. The indications are that even under high bias voltages recombination processes take place close to the interface and give rise to thermally reversible changes of the gap density-of-states. Special attention is paid to the bias voltage and wavelength dependence of the degradation effect. The results are discussed in qualitative terms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341009
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