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  • 1
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary. Ultrasound brain scans were obtained daily for the first 5 days after birth, on day 7 and then weekly until discharge from hospital in 86 babies during a 12-month period. The babies weighed 〈1501 g or were 〈34 weeks gestational age. Fifty-one (59%) had normal scans. 34 (40%) developed periventricular haemorrhage, and seven (8%) developed periventricular cysts (associated with periventricular haemorrhage in six). Factors associated with periventricular haemorrhage were perinatal hypoxia, acidosis, hypercapnia and hypoxia after birth. Babies who developed periventricular cysts (periventricular leukomalacia) were more likely to have been hypoxic at birth and in four of the seven there had been a maternal antepartum haemorrhage. The association of perinatal hypoxia with periventricular haemorrhage and leukomalacia suggests that intraparturm events may predispose to the onset of these lesions which then develop postnatally. Prevention of perinatal hypoxia may play an important role in diminishing the disability caused by these conditions.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of natural products 48 (1985), S. 802-808 
    ISSN: 1520-6025
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1846-1851 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An emission spectroscopy study is made of an rf magnetron discharge used to sputter deposit CdTe in Ar. The dependence on gas pressure and rf power of the strongest Cd, Te, and Ar emission line intensities (I) is determined for both the negative glow and the positive column. It is shown that the sputtered atom density NCd (NTe) is proportional to ICd/IAr (ITe/IAr) as the rf power is varied at pressures near 0.5 Pa, and that such a relationship does not hold as the gas pressure is varied. From the power dependence of IAr it is deduced that Ar atoms are excited to emitting states directly from the ground state; no evidence for the influence of intermediate metastable states is observed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1635-1640 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The plasma potential and the electron density and electron temperature of an rf magnetron discharge used for the ion-assisted growth of PbTe epilayers on BaF2 are measured using Langmuir probe diagnostics. The effect of rf potentials at the probe on the measured plasma parameters is reduced by driving the probe to follow the plasma potential. The discharge parameters are determined as a function of substrate bias voltage and substrate rf power. The ion energy and flux necessary for the epitaxial growth of (111) PbTe on (111) BaF2 are determined.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5796-5803 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence spectra are measured for sputter-deposited, heteroepitaxial (100)CdTe layers of thicknesses up to 14 μm grown on (100)KBr substrates. Three emission bands, at 0.81, 1.00, and 1.41 eV, are observed. From comparison of the photoluminescence spectra of the epilayers with those of several bulk single-crystal and polycrystalline samples, the origin of the 1.41-eV band, reported previously by many workers, is correlated to structural defects arising from lattice mismatch with the substrate. It is concluded that the 0.81- and 1.00-eV bands are due to defect levels resulting from nonstoichiometric growth. The injection level and temperature dependence of the photoluminescence suggest that the 1.41- and 0.81-eV emissions are donor-acceptor transitions whereas the 1.00- eV emission is a conduction-band-acceptor transition.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8210-8216 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputter-deposited, heteroepitaxial (100)CdTe layers prepared at growth temperatures of 300–325 °C are found to be p-type with high dark resistivities on the order of 2×105 Ω cm. The epilayers are highly photoconducting and exhibit photoconductivity to dark conductivity ratios as high as 1×106 at around 200 K. The photoconductivity is observed to exhibit a sublinear dependence on illumination intensity and a thermally activated behavior. The model developed by Simmons and Taylor [J. G. Simmons and G. W. Taylor, J. Phys. C: Solid State Phys. 7, 3051 (1974); G. W. Taylor and J. G. Simmons, J. Phys. C: Solid State Phys. 7, 3067 (1974)] to explain photoconductivity in amorphous semiconductors is shown to be applicable to these epitaxial layers. Hole traps at 0.40 and 0.23 eV above the valence band have been determined from the temperature dependence of the photoconductivity. Acceptor levels at 0.62 and 0.07 eV above the valence band, determined from the temperature dependence of the dark conductivity, are discussed in relation with photoluminescence bands at 0.81 and 1.00 eV reported earlier [S. R. Das, J. G. Cook, N. L. Rowell, and M. S. Aouadi, J. Appl. Phys. 68, 5796 (1990)] in these epilayers.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2658-2666 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An automated measurement technique to measure the surface impedance, Zs=Rs+iXs, as a function of temperature is presented. Based on the dielectric resonator measurement technique, a general purpose approach is developed which does not neglect dielectric loss and can accommodate a variety of sample sizes and measurement frequencies. By employing a parallel-plate geometry which has a known electromagnetic solution, both the surface impedance of the sample and the induced surface current can be related quantitatively to the measured Q, the resonant frequency, and the applied power. Although the measurement sensitivity depends on the system design and choice of materials, comprehensive equations are presented which serve as a useful tool for designing the system and simulating the measurement. Using a sample size of 1×1 cm2 and a measurement frequency of 19.6 GHz, a measurement uncertainty of 420 μΩ for Rs and 4800 μΩ for ΔXs is demonstrated. For superconducting samples, this translates to a measurement uncertainty of 105 μΩ for Rs and 2400 μΩ for ΔXs at 10 GHz, which is sufficient for routine measurements. Methods to improve the resolution and uncertainty of this measurement technique are discussed, and a general scheme to fully automate this measurement via computer is demonstrated.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1663-1665 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first demonstration of ZnSe metal-semiconductor field-effect transistors. These new devices were fabricated from n-type Cl-doped epitaxial ZnSe layers grown by molecular beam epitaxy on (100) oriented semi-insulating Cr-doped GaAs substrates. Epitaxial layers with room-temperature carrier concentrations of 1.6×1017 cm−3 and electron mobilities ranging from 400 to 500 cm2/V s were used for device fabrication. Au was used as a Schottky gate contact. Either In or a multilevel metallization scheme using Cr and In was employed for the source and drain ohmic contacts. Depletion-mode transistor operation was observed for structures with 5 and 100 μm gate lengths and varying gate widths. The 5 μm gate length by 200 μm gate width device structures exhibited transconductances of 0.5 mS/mm.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2420-2422 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The light hole to conduction band optical transition has been identified in the room-temperature absorption spectra of several high quality HgTe-HgCdTe superlattices, in addition to the familiar heavy hole to conduction band transitions. The observation of the light hole transition, coupled with a more accurate determination of the superlattice layer thicknesses, allows the superlattice band gap and the HgTe-HgCdTe valence band offset to be determined more precisely than previously possible. A two-band tight-binding model was used to calculate the transition energies to compare with the optical data. The valence band offset for the HgTe-Hg0.15 Cd0.85 Te interface was determined to be 300±25 meV.
    Type of Medium: Electronic Resource
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