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  • 1
    Electronic Resource
    Electronic Resource
    Stress-related problems in silicon technology (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 53 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The silicon integrated-circuits chip is built by contiguously embedding, butting, and overlaying structural elements of a large variety of materials of different elastic and thermal properties. Stress develops in the thermal cycling of the chip. Furthermore, many structural elements such as CVD (chemical vapor deposition) silicon nitride, silicon dioxide, polycrystalline silicon, etc., by virtue of their formation processes, exhibit intrinsic stresses. Large localized stresses are induced in the silicon substrate near the edges and corners of such structural elements. Oxidation of nonplanar silicon surfaces produces another kind of stress that can be very damaging, especially at low oxidation temperatures. Mismatch of atomic sizes between dopants and the silicon, and heteroepitaxy produce another class of strain that can lead to the formation of misfit dislocations. Here we review the achievements to date in understanding and modeling these diverse stress problems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349282
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  • 2
    Electronic Resource
    Electronic Resource
    Misfit dislocations and critical thickness of heteroepitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7901-7903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An expression is derived for the critical thickness of heteroepitaxial films by taking the energy minimization approach. It is exactly identical to the critical thickness obtained by Matthew and Blakeslee [J. Cryst. Growth 27, 118 (1974)] using a force balance approach, after allowing for a discrepancy judged to be an unmentioned approximation in the latter. The equivalence of the two formulations is explained conceptually. The reason is pointed out for the very different critical thickness obtained by People and Bean [Appl. Phys. Lett. 47, 322 (1985); 49, 229 (1986)] using the energy minimization approach. It is further shown that misfit dislocations do not appear en masse catastrophically when the critical thickness is reached. Rather, their density increases gradually with the epitaxial thickness, approaching only asymptotically a value required for a complete relief of film stress as the thickness tends to infinity. Any observed sudden mass appearance of misfit dislocations must be attributed to a substantial supercritical thickness actually existing, prior to nucleation of dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347476
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  • 3
    Electronic Resource
    Electronic Resource
    Erratum: Misfit dislocations and critical thickness of heteroepitaxy [J. Appl. Phys. 69, 7901 (1991)] (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4009-4009 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349174
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  • 4
    Electronic Resource
    Electronic Resource
    Low-threshold InGaAs/GaAs strained layer single quantum well lasers with simple ridge waveguide structure (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7892-7894 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double heterostructure InGaAs-GaAs strained-layer single quantum well ridge waveguide lasers grown by molecular beam epitaxy were fabricated by using in situ laser monitored reactive ion etching to form the ridges. Continuous-wave threshold current as low as 3.5 mA was obtained on a ridge laser diode of 3.3 μm wide and 215 μm long having cleaved mirrors. The lasing wavelength is at 0.988 μm and the measured differential external quantum efficiency is 61%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347473
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  • 5
    Electronic Resource
    Electronic Resource
    The expansion of product probability distributions from trajectory calculations in two-dimensional Fourier series (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 1958-1965 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The procedure for expanding product probability density functions determined from a classical trajectory study in a two-dimensional Fourier series is developed. This method has the advantage that essentially all of the information obtained from the trajectories is retained in the expansion; consequently, the resolution of the density functions is high. A smoothing technique using a Gaussian filter is also presented. The results are applied to a quasiclassical study of the F+H2 reaction, and new insights are obtained for this reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455094
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  • 6
    Electronic Resource
    Electronic Resource
    Kinetics of interstitial supersaturation and enhanced diffusion in short-time/low-temperature oxidation of silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4527-4532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of the supersaturation of self-interstitials and the enhancement of impurity diffusivity in short-time/low-temperature oxidation of silicon is investigated analytically. It is found that, whereas in long-time/high-temperature oxidation the interstitial supersaturation and the diffusivity enhancement decrease with time as t−n (n(approximately-equal-to)0.2–0.3), in short-time low-temperature oxidation they start from zero and increase with time, until some characteristic time determined by the linear-parabolic oxide growth. This characteristic time increases rapidly with the decrease of temperature. This kinetic behavior has not been expected previously, mainly because there is no available data on stacking fault growth and on diffusion enhancement under the short-time/low-temperature condition which has become common in modern IC processings. The more general case of linear-parabolic oxidation and the effect of bulk recombination have also been analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335353
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  • 7
    Electronic Resource
    Electronic Resource
    Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum-well ridge-waveguide lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4479-4487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the increase in threshold currents due to lateral carrier diffusion in InGaAs/AlGaAs quantum-well ridge-waveguide laser diodes. The ridge stripes were fabricated by using both in situ monitored pure Cl2 reactive ion etching and selective wet etching to completely eliminate the spreading current in the conductive upper cladding layer while keeping the ridge sidewalls straight. After comparing the threshold data with a theoretical model, the ambipolar diffusion coefficient is found to be 22 cm2/s in the population-inverted InGaAs layer. This model is based on the calculated optical gain curve and the ambipolar carrier transport in the quantum-well and waveguiding layers. The dependence of carrier lifetime on the local carrier concentration is included in the calculation. Moreover, from another set of devices with the portions of the active layer outside the ridge stripes etched away, the surface recombination velocity is found to be around 1–2×105 cm/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357279
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  • 8
    Electronic Resource
    Electronic Resource
    High-efficiency and low-threshold InGaAs/AlGaAs quantum-well lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3932-3934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-efficiency and low-threshold InGaAs/AlGaAs quantum-well laser structures have been grown by molecular beam epitaxy. Material characterization was performed on polyimide-planarized ridge-waveguide lasers. The measured material gain data are compared to theoretical calculations that include the valence-band mixing effects. Total injection current densities of 84 and 60 A/cm2 have been measured from 50-μm-wide laser diodes with cavity lengths of 2850 μm (from a double-quantum-well sample) and 1770 μm (from a single-well sample), respectively. Moreover, we have also obtained a cw threshold current as low as 2.1 mA from a 1.7-μm-wide and 140-μm-long as-cleaved ridge-waveguide device. In addition, the lateral current leakage for the double-quantum-well sample is found to be twice that of the single-well one.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357408
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  • 9
    Electronic Resource
    Electronic Resource
    Point defect generation and enhanced diffusion in silicon due to tantalum silicide overlays (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 308-310 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tantalum silicide deposited directly on monocrystalline silicon substrates and annealed at 950 °C causes enhanced diffusion of both boron and antimony in buried layers. The effect is taken as evidence of vacancy supersaturation, since it is known that antimony diffuses in silicon by an almost entirely vacancy mechanism. It also indicates a substantial vacancy component in boron diffusion, at least at 950 °C, or lower. The simultaneous occurrence of boron and antimony enhanced diffusion contrasts with the nitridation effect on diffusion previously reported. That the enhanced diffusion occurred in buried layers excludes the snow-plow mechanism. The Si:Ta ratio of the sputter-deposited tantalum silicide is slightly less than 2. The interpretation is that further silicidation generates vacancies by removing silicon atoms from the silicon substrate. Enhanced diffusion was not detectable when there was a 150-nm intervening layer of polycrystalline silicon film between the silicide and the monocrystalline silicon substrate, indicating that polycrystalline silicon is an effective sink for excess vacancies, perhaps more than it is for excess interstitials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98452
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of process parameters on stress development in two-dimensional oxidation (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 323-330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simplified viscoelastic analysis has been made of the stress evolution during two-dimensional (2D) oxidation of silicon substrates, with the objective of learning the effect of process parameters such as temperature and steam pressure. A cylindrical silicon surface was chosen for simplicity of analysis, and yet it still has most of the essential elements pertinent to practical problems such as, e.g., the oxidation of trench corners in silicon integrated circuits. With correlations between the viscosity and the hydroxyl content of SiO2, and between the hydroxyl content and the steam pressure, the analysis shows that stress reduction can be achieved by carrying out oxidation at high steam pressures. However, stresses remain rather high if the oxidation temperature is as low as 800 °C. For a linear-parabolic oxidation kinetics, both the oxide and the substrate stresses do not increase indefinitely with the increase of oxide thickness, but reach their respective peaks at oxide thicknesses that are dependent on process parameters. The present results should be useful in serving as guidelines in the selection of 2D oxidation conditions. The accuracy of a previous 2D oxidation model based on the viscous flow of an incompressible fluid has also been assessed with reference to the viscoelastic model. The incompressible-fluid model is found to be quite accurate at high temperatures (approximately-greater-than)900 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341430
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