Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 2341-2343
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Monocrystalline GaAs/ErAs/GaAs structures are fabricated by migration-enhanced epitaxy at 320 °C. When the ErAs layer thickness is less than 3 monolayers, reflection high-energy electron diffraction patterns, double crystal x-ray diffraction analysis, and transmission electron microscopy observations show successful overgrowth of GaAs on the ErAs layer. Distinct satellite peaks are observed in an x-ray rocking curve of an ErAs/GaAs superlattice grown under a similar condition, indicating that high-quality multilayer structures with very thin ErAs layers can be fabricated by migration-enhanced epitaxy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107020
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