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  • 1
    Electronic Resource
    Electronic Resource
    Solid-phase reactions and crystallographic structures in Zr/Si systems (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7050-7056 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid-phase reactions and crystallographic structures in the interfacial region of Zr/(100)Si systems, which is closely related to the specific contact resistivity, have been investigated by x-ray diffraction, Auger electron spectroscopy and cross-sectional high-resolution transmission electron microscopy. As-grown Zr films are in an amorphous phase including crystallites. The Zr film on silicon annealed at a temperature of 420 °C for 30 min has a bilayer structure. The upper layer is a crystalline α-Zr layer with a (0001) fibrous structure and the lower layer is an amorphous zirconium silicide layer. The formation of the amorphous silicide layer is considered to result from the diffusion of Si atoms from the substrate into the Zr film and to play a major role in a low contact resistivity of 4×10−8 Ω cm2 achieved in this system. By annealing above 560 °C, which brings about an increase in contact resistivity, the crystalline Zr layer with the fibrous structure is changed to an amorphous silicide throughout the film and, subsequently, ZrSi2 regions with a (010) preferred orientation is formed at the interface between the amorphous interlayer and the single-crystal Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347644
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Stark-effect measurement of high free-electron laser electric fields in MTX by laser-aided particle-probe spectroscopy : Eighth topical conference on high−temperature plasma diagnostics (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2964-2966 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We are constructing a diagnostic system to measure the electric field ((approximately-greater-than)100 kV/cm) of a free-electron laser (FEL) beam when injected into the plasma of the Microwave Tokamak Experiment (MTX). The apparatus allows a crossed-beam measurement, with 2 cm spatial resolution in the plasma, involving the FEL beam (with 140 GHz, ≈1 GW ECH pulses), a neutral helium beam, and a dye laser beam. After the laser beam pumps metastable helium atoms to higher excited states, their decay light is detected by an efficient optical system. Because of the Stark effect arising from the FEL electric field (E), a forbidden transition can be strongly induced. The intensity of emitted light resulting from the forbidden transition is proportional to E2. Because photon counting rates are estimated to be low, extra effort is made to minimize background and noise levels. It is possible that the lower E of an MTX gyrotron-produced ECH beam with its longer duration pulses can also be measured using this method. Other applications of the apparatus described here may include measurements of ion temperature (using charge-exchange recombination), edge-density fluctuations, and core impurity concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141740
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Characteristics of interfaces for sputter deposited Bi2Sr2Ca1Cu2Ox/Bi2Sr2Cu1Oy/Bi2Sr2Ca1Cu2Oz structure (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 640-642 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A depth profile of an Auger electron spectroscopy (AES) for a Bi2Sr2Ca1Cu2Ox/Bi2Sr2Cu1Oy/Bi2Sr2Ca1Cu2Oz structure was investigated. This multilayered structure was fabricated by an in situ sputtering process and used for sandwich-type Josephson junctions. A little diffusion of Ca atoms from a top layer into the Bi2Sr2Cu1Oy layer was observed. It was confirmed that selective sputter etching during the AES measurement did not occur so seriously. The transition width at the two interfaces was estimated as about 10 nm, which was close to the depth resolution of our AES measurement. In addition, the interdiffusion between a Bi-based oxide film and a MgO substrate was hardly observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104554
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  • 4
    Electronic Resource
    Electronic Resource
    Solid phase reaction and electrical properties in Zr/Si system (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1105-1107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The specific contact resistivity and the Schottky barrier height in the Zr/Si system have been measured as a function of annealing temperature. The specific contact resistivity decreases with increasing annealing temperature and a minimum value of 4×10−8 Ω cm2 is obtained after annealing at 420 °C in a vacuum, which is about two orders of magnitude lower than that of the Al (1.5% Si)/n+-Si system. The formation of ZrSi2 is observed at annealing temperatures above 350 °C, which can be considered to be related to the lowering of contact resistance. The Schottky barrier heights of as-grown Zr films are 0.61 eV for p-type Si and 0.52 eV for n-type Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103505
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  • 5
    Electronic Resource
    Electronic Resource
    Fabrication of thin-film-type Josephson junctions using a Bi-Sr-Ca-Cu-O /Bi-Sr-Cu-O/Bi-Sr-Ca-Cu-O structure (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1469-1471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film Josephson junctions with normal metal barriers using a Bi-based high Tc oxide superconductor were successfully fabricated. Bi2Sr2Ca1Cu2Ox films were used for both superconducting electrodes and Bi2Sr2Cu1Oy for the barrier layer. The junction area of 20×40 μm2 was defined by photolithography and Ar ion milling. These S/N/S-type junctions clearly exhibited the ac Josephson effect under the irradiation of radio frequency waves of 12 GHz and more than 20 Shapiro steps were observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103173
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  • 6
    Electronic Resource
    Electronic Resource
    Experimental verification of the theory on the inverse Smith–Purcell effect at a submillimeter wavelength (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 870-872 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The inverse Smith–Purcell effect is a candidate for laser-driven linacs utilizing the interaction between laser light and an electron beam traveling just in front of a metallic grating. We have performed experiments to study electron energy spread as a function of electron beam position above the grating. A submillimeter wave laser (CH3F, 496 μm) is used as a driving source. It is found that the energy spread characteristics show exponential decay of the interaction strength (field intensity) in the direction perpendicular to the grating surface, as a classical theory on the effect predicts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107773
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  • 7
    Electronic Resource
    Electronic Resource
    Anomalous thermal electron heating and heat transport inhibition due to parametric instabilities (1990)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 2 (1990), S. 1150-1153 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements are presented of strong thermal electron heating and the heat transport inhibition. An electron plasma wave heats hot electrons near the critical density. A return current is induced to keep charge neutrality. Thermal electrons are heated strongly by the resistivity of parametrically excited isotropic ion wave turbulence (anomalous joule heating). The heat transport of thermal electrons is also inhibited by the resistivity. The experimental results agree reasonably well with theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.859250
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  • 8
    Electronic Resource
    Electronic Resource
    Reply to "Comments on ‘Ion acoustic parametric decay instability in laser-produced plasma with varying ionic charge' [Phys. Fluids B 3, 1983 (1991)]'' (1993)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 5 (1993), S. 656-656 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The authors of the comment have correctly identified an area in which our paper is neither sufficiently clear nor fully correct. Unfortunately, we do not agree with their equations or their physical arguments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.860499
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  • 9
    Electronic Resource
    Electronic Resource
    Density and temperature profiles in strongly absorbing plasma with distributed absorption (1991)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 3 (1991), S. 1241-1244 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is presented of the spatial structure of a laser-heated, strongly absorbing, planar plasma. Inverse bremsstrahlung is very strong so that laser light absorption is not localized. Absorption is distributed over densities from well below critical to the critical density. It is shown that the spatial structure of the plasma is self-consistent with laser energy deposition and heat transport so measurement of the plasma structure can be used as diagnostic of absorption and transport. Nonphysical discontinuities in density and temperature at the critical surface that are predicted by previous local absorption models for strongly flux-limited heat transport are reduced. These jumps persist in the present model. It is shown that an improved flux-limited heat transport model, strongly limited in the underdense plasma and weakly limited in the overdense plasma, results in continuous density and temperature profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.859817
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  • 10
    Electronic Resource
    Electronic Resource
    Millimeter-wave phase-imaging interferometer for the GAMMA 10 tandem mirror (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2857-2861 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A millimeter-wave phase-imaging interferometer has been developed for the study of density profiles of the GAMMA 10 tandem mirror. The interferometer uses a 70-GHz klystron oscillator and a quasi-optical transmission system. The probe beam is expanded so as to fill an orthogonal view of a plasma cross section. The view is imaged onto a detector array. The detector array consists of beam-lead GaAs Schottky barrier diodes bonded to antennas fabricated using photolithographic techniques on a fused-quartz substrate. Two types of antennas, bow-tie and Yagi–Uda antennas have been used in order to provide an effective matching to millimeter-wave beams, and compared for the performance of an imaging system. The interferometers have been applied to the central-cell and plug-cell plasmas of GAMMA 10.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142172
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