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  • 1990-1994  (3)
  • 07.65.Eh  (1)
  • 68.65  (1)
  • 78.55.-m  (1)
  • 78.65-s  (1)
Materialart
Erscheinungszeitraum
  • 1990-1994  (3)
Jahr
Schlagwörter
  • 1
    ISSN: 1432-0630
    Schlagwort(e): 68.65 ; 79.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract In this work we present a systematic study of the local photovoltaic properties of ReS2, using a scanning tunneling microscope (STM). The tunneling junction of the STM was optically illuminated during the tunneling process. The phase sensitive detected photo-induced tunneling current (PITC) was studied as a function of wavelength and surface topography. In order to improve the performance of ReS2 solar cells, the samples were treated with NaI/I2 and EDTA solutions. Relative to the untreated sample, the EDTA-treated samples show an increase in the photo-induced tunneling current by a factor of 8–10 in the whole spectral range, the NaI/I-treated samples by 2–3. Two dimensional mapping of the PITC was performed on an atomic scale and compared to the surface topography.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    ISSN: 1432-0630
    Schlagwort(e): 07.60.Pb ; 07.65.Eh ; 78.65-s
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Opaque samples are imaged by Scanning Nearfield Optical Microscopy (SNOM) in reflection mode: A quartz glass fiber tip is used both to illuminate the sample and to collect light locally reflected from or emitted by the surface. The collected light is coupled out by a 2×2 fiber coupler and fed into a grating spectrometer for spectral analysis at each sampled point. The tip-sample distance is controlled by a shear-force feedback system. The simultaneous measurement of topography and optical signals allows an assessment of imaging artifacts, notably topography-induced intensity changes. It is demonstrated that an optical reflectance contrast not induced by topographic interference can be found on suitable samples. Local spectral analysis is shown in images of a photoluminescent layer.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 54 (1992), S. 455-459 
    ISSN: 1432-0630
    Schlagwort(e): 61.10.-i ; 78.55.-m ; 72.80.Ey
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract ZnSe films were grown by chemical vapour deposition on GaAs substrates. The influence of the source temperature (between 820 and 900° C) and the substrate temperature (between 620 and 790° C) on the film properties were investigated by Hall measurements, X-ray diffraction, and photoluminescence. With respect to blue luminescent devices the ratio of excitonic to deep level transitions was found to be optimum at low growth rates when the source temperatures were kept below 840° C. P-type conduction up to a net carrier concentration of 8×1018 cm−3 could be obtained by substrate temperatures above 700° C. Lattice contraction versus substrate temperature pointed to a reduced incorporation of donors at higher growth temperatures.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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